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Spintronics IBM


by Various

Available: This product is currently not available
Studio: IBM
Binding: Paperback
Publication Date: December 02, 2008
Publisher: IBM


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Product Description
8.5" X 11 INCHES. 166 Pages. Contents: Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip W. J. Gallagher and S. S. P. Parkin p. 5 Design considerations for MRAM T. M. Maffitt, J. K. DeBrosse, J. A. Gabric, E. T. Gow, M. C. Lamorey, J. S. Parenteau, D. R. Willmott, M. A. Wood, and W. J. Gallagher p. 25 Two-level BEOL processing for rapid iteration in MRAM development M. C. Gaidis, E. J. OSullivan, J. J. Nowak, Y. Lu, S. Kanakasabapathy, P. L. Trouilloud, D. C. Worledge, S. Assefa, K. R. Milkove, G. P. Wright, and W. J. Gallagher p. 41 Rapid-turnaround characterization methods for MRAM development D. W. Abraham, P. L. Trouilloud, and D. C. Worledge p. 55 Single-domain model for toggle MRAM D. C. Worledge p. 69 Spin angular momentum transfer in current-perpendicular nanomagnetic junctions J. Z. Sun p. 81 SpintronicsA retrospective and perspective S. A. Wolf, A. Y. Chtchelkanova, and D. M. Treger p. 101 Highly efficient room-temperature tunnel spin injector using CoFe/MgO(001) X. Jiang, R. Wang, R. M. Shelby, and S. S. P. Parkin p. 111 Bipolar spintronics: Fundamentals and applications I. uti, J. Fabian, and S. C. Erwin p. 121 Toward dissipationless spin transport in semiconductors B. A. Bernevig and S. Zhang p. 141 Regular paper An approximation to the greedy algorithm for differential compression R. C. Agarwal, K. Gupta, S. Jain, and S. Amalapurapu p. 149
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