Product Description
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

CUSTOMER REVIEWS (Average Customer Rating: 5.0 based on 1 review)

Excellent Reference!

5 Stars
December 04, 2001
Great book. (...) If you are starting out in the Rad Effects community this is the book for you. Lots of material and little fluff.

SIMILAR PRODUCTS

	Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices (Selected Topics in Electronics and Systems) by Daniel M. Fleetwood (Author), R. D. Schrimpf (Editor) This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal–oxide–semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to...
	Handbook of Radiation Effects by Andrew Holmes-Siedle (Author), Len Adams (Author) A handbook of engineers to fill the gap in the fields of high-energy radiation environments, electronic device physics and materials. Provides a straightforward account of the problems which arise when high-energy radiation bombards matter and of engineering methods for solving those problems.
	Ionizing Radiation Effects in Mos Oxides (International Series on Advances in Solid State Electronics and Technology) by Timothy R. Oldham (Editor) This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. There has been a significant amount of work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic...