| View Larger Image | Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors | Spiral-boundby Kevin Cumblidge (Author)
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| | Binding: | Spiral-bound | | Publisher: | Storming Media | | Page Count: | 62 Pages | | Publication Date: | 2004 | | Sales Rank: | 6,981,371th |
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Product Description
This is a AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING AND MANAGEMENT report procured by the Pentagon and made available for public release. It has been reproduced in the best form available to the Pentagon. It is not spiral-bound, but rather assembled with Velobinding in a soft, white linen cover. The Storming Media report number is A465624. The abstract provided by the Pentagon follows: Research in the field of mid-wave infrared (MWIR) semiconductor photonic devices has led to applications in a variety of disciplines including atmospheric monitoring, optical communications, non-invasive glucose testing for diabetics, and infrared (IR) countermeasures. One of the limiting factors for improving the modulation rates of MWIR devices is the carrier relaxation time. This is the time required for energetic carriers to cool to the edge of their respective bands in a bulk semiconductor material, or to the bottom of a well through inter- and intra-sub-band scattering in a quantum well (QW) structure. From these lower energy states, they can then recombine radiatively in photonic devices. This investigation utilized the nonlinear optical technique of frequency upconversion to perform time-resolved luminescence spectroscopy on epitaxial bulk InAs, InAsSb/InAlAsSb type I QW structure, and InAs/GaInSb type II QW samples to calculate carrier relaxation times in each as a function of excitation irradiance and sample temperature. |
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