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NPL research shows there could be no end in sight for Moore's Law
December 09, 2008The fast pace of growing computing power could be sustained for many years to come thanks to new research from the UK's National Physical Laboratory (NPL) that is applying advanced techniques to magnetic semiconductors.
Moore's Law observed that the density of transistors on an integrated circuit doubles every two years. Components have shrunk over time to achieve this, but experts believed that when the characteristic transistor size reduces below ~ 20 nm, heating and quantum effects will become so severe that they will not be of practical use.
In a paper published in one of the most cited scientific journals, Nano Letters (ISI citation factor is 9.627), researchers at NPL looked at solutions to this problem as part of a project dealing with magnetic phenomena at reduced dimensions.
In the paper NPL's scientists reported on their research on single crystalline Mn-doped Ge nanowires that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm2/Vs and other industrially relevant parameters, demonstrating the potential of using these nanowires as building blocks for electronic devices.
Senior Research Scientist at NPL Dr Olga Kazakova said:
'The solution lies in changing not only the material but also the structure of our transistors. We have worked mainly with germanium nanowires that we have made magnetic. Magnetic semiconductors don't exist in nature, so they have to be artificially engineered. Germanium is closely compatible with silicon, meaning it can easily be used with existing silicon electronics without further redesign. The resulting transistors based on NPL's germanium nanowire technology, which could revolutionise computing and electronic devices, could realistically be 10 years away."
National Physical Laboratory
In the paper NPL's scientists reported on their research on single crystalline Mn-doped Ge nanowires that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm2/Vs and other industrially relevant parameters, demonstrating the potential of using these nanowires as building blocks for electronic devices.
Senior Research Scientist at NPL Dr Olga Kazakova said:
'The solution lies in changing not only the material but also the structure of our transistors. We have worked mainly with germanium nanowires that we have made magnetic. Magnetic semiconductors don't exist in nature, so they have to be artificially engineered. Germanium is closely compatible with silicon, meaning it can easily be used with existing silicon electronics without further redesign. The resulting transistors based on NPL's germanium nanowire technology, which could revolutionise computing and electronic devices, could realistically be 10 years away."
National Physical Laboratory
Device controls electron spin at room temperature
In a breakthrough for applied physics, North Carolina State University researchers have developed a magnetic semiconductor memory device, using GaMnN thin films, which utilizes both the charge and spin of electrons at room temperature.
Cheaper LEDs from breakthrough in zinc oxide (ZnO) nanowire research, Nano Letters study says
Engineers at UC San Diego have synthesized a long-sought semiconducting material that may pave the way for an inexpensive new kind of light emitting diode (LED) that could compete with today's widely used gallium nitride LEDs, according to a new paper in the journal Nano Letters.
Scientists Image 'Magnetic Semiconductors' On The Nanoscale
In a first-of-its-kind achievement, scientists at the University of Iowa, the University of Illinois at Urbana-Champaign and Princeton University have directly imaged the magnetic interactions between two magnetic atoms less than one nanometer apart (one billionth of a meter) and embedded in a semiconductor chip.
Finnish SPIN researchers at forefront of development: Spintronics can bring electronics down to size
Researchers working on the room temperature spintronics (SPIN) research project are the first in Europe to successfully produce GaMnN layers, which are ferromagnetic at room temperature. The layer properties were examined using electric, optic, x-ray and positron measurements. The Academy-funded SPIN project is comprised of four participating entities, i.e. the Helsinki University of Technology (HUT) Departments of Electron Physics, Optoelectronics and Physics laboratories and the VTT Technical Research Centre of Finland Microelectronics research institute.
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