Vise squad: Putting the squeeze on a crystal leads to novel electronicsMay 11, 2009A clever materials science technique that uses a silicon crystal as a sort of nanoscale vise to squeeze another crystal into a more useful shape may launch a new class of electronic devices that remember their last state even after power is turned off. Computers that could switch on instantly without the time-consuming process of "booting" an operating system is just one of the possibilities, according to a new paper by a team of researchers spanning four universities, two federal laboratories and three corporate labs.* Almost exactly two years ago, a team led by Joseph Woicik of NIST and several other federal, academic and industrial laboratories combined precision X-ray spectroscopy data from the NIST beamlines at the National Synchrotron Light Source with theoretical calculations to demonstrate that by carefully layering a thin film of strontium titanate onto a pure silicon crystal, they could distort the titanium compound into something it normally wasn't-a so-called "ferroelectric" compound that might serve as a fast, efficient medium for data storage.** The new paper adds a key experimental and technological demonstration-the ability to write, read, store and erase patterned bits of data in the strontium titanate film. In contrast to a traditional data storage material, which records data as a pattern of magnetic regions pointing in different directions, a ferroelectric can do the same with tiny regions of polarized electric charges. Ferroelectric memories are used, for example, in "smart cards" for subway systems. Ferroelectric structures that could be built directly onto silicon crystals, the most common materials base for consumer electronics, have been sought for years for a variety of applications, including nonvolatile memory (data that is not lost when power is turned off) and temperature or pressure sensors integrated into silicon-based microelectronics. One of the potentially biggest prizes would be ferroelectric transistors that could retain their logic state ("on" or "off") without power, which could enable computers that switch on instantly without needing a boot stage. The breakthrough originated with researcher Hao Li of Motorola, Inc., who succeeded in depositing the metal oxide directly onto silicon with no intervening layer of silicon oxide producing "coherency" between the two crystal structures-the unique matching up perfectly of one atom to the next across the metal-oxide/Si interface. This is a difficult trick both because silicon is highly reactive to oxidation and because the crystal spacing of the two materials does not normally match. Guided by precision X-ray diffraction data from NIST, Li developed a finely controlled method of depositing the strontium titanate in stages, gradually building up layers that were only a few molecules thick. The result, X-ray data showed, was that the silicon atoms literally squeezed the cubic strontium-titanate crystal to make it fit, distorting it into an oblong shape. That distortion creates a structural instability in the film that makes the compound a ferroelectric. While theoretical calculations and spectroscopic data demonstrated that the distorted crystal behaved like a ferroelectric, proof of the ferroelectric functionality waited on the new work led by Cornell University professor Darrell Schlom, whose team used a technique called piezoresponse force microscopy to write, read and erase polarized domains in the strontium titanate film. National Institute of Standards and Technology (NIST) |
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| Related Ferroelectric Current Events and Ferroelectric News Articles ORNL finding could help electronics industry enter new phase Electronic devices of the future could be smaller, faster, more powerful and consume less energy because of a discovery by researchers at the Department of Energy's Oak Ridge National Laboratory. Multiferroics -- making a switch the electric way Multiferroics are materials in which unique combinations of electric and magnetic properties can simultaneously coexist. 'Instant on' computing The ferroelectric materials found in today's "smart cards" used in subway, ATM and fuel cards soon may eliminate the time-consuming booting and rebooting of computer operating systems by providing an "instant-on" capability as well as preventing losses from power outages. Domain Walls that Conduct Electricity The logic and memory functions of future electronic devices could shrink dramatically - to one or two nanometers (billionths of a meter) instead of the many tens of nanometers that characterize today's most advanced elements - if a way can be found to control domain walls, the ultrathin transition zones that separate regions of a material having different magnetic, electric, or other properties. Capture of nanomagnetic 'fingerprints' a boost for next-generation information storage media In the race to develop the next generation of storage and recording media, a major hurdle has been the difficulty of studying the tiny magnetic structures that will serve as their building blocks. Polymer electric storage, flexible and adaptable The proliferation of solar, wind and even tidal electric generation and the rapid emergence of hybrid electric automobiles demands flexible and reliable methods of high-capacity electrical storage. Now a team of Penn State materials scientists is developing ferroelectric polymer-based capacitors that can deliver power more rapidly and are much lighter than conventional batteries. Disorder enables extreme sensitivity in piezoelectric materials A research team working at the National Institute of Standards and Technology (NIST) has found an explanation for the extreme sensitivity to mechanical pressure or voltage of a special class of solid materials called relaxors. The solution to a 7-decade mystery is crystal-clear to FSU chemist A Florida State University researcher has helped solve a scientific mystery that stumped chemists for nearly seven decades. In so doing, his team's findings may lead to the development of more-powerful computer memories and lasers. Landmark Modeling Study at Penn Reveals How Ferroelectric Computer Memory Works A collaboration of University of Pennsylvania chemists and engineers has performed multi-scale modeling of ferroelectric domain walls and provided a new theory of behavior for domain-wall motion, the "sliding wall" that separates ferroelectric domains and makes high-density ferroelectric RAM (FeRAM) possible. Colluding with colloids: Scientists make liquid crystal discovery What do milk, paint, ink and liquid crystals have in common? Colloids. Findings of Kent State University scientists indicate that manipulating the size of colloids, micron-sized or nanometer-sized particles, can produce huge changes in the material properties of liquid crystals. More Ferroelectric Current Events and Ferroelectric News Articles |
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