Stretchable interlaced-nanowire film for ultraviolet photodetectors with high response speed

April 28, 2019

Stretchable electronics, as a kind of "soft" electronic devices which can be stretched, deformed and wrapped onto nonplanar curved surfaces, have attracted tremendous attraction due to their potential applications in wearable electronics, implantable biomedical devices, and artificial electronic skin. So far, many types of stretchable electronic devices have been developed including stretchable transistors, light-emitting diodes (LEDs), supercapacitors, photodetectors and sensors. Ultraviolet (UV) photodetectors have wide applications in crime investigation, biological analysis, fire monitoring, and UV irradiation detection. Stretchable UV photodetectors can be applied in much wider fields owing to their fascinating features of being stretchable, portable, implantable and wearable.

Metal oxides with wide bandgap, abundant reserves, large specific surface area, high aspect ratio and excellent stability, have been extensively studied as the active materials for high-performance UV photodetectors, especially the metal oxides nanowires (NWs) for the much higher photoresponse compared with their bulk or thin-film counterparts. However, due to the presence of a large number of surface defects related to trapping centers, most of the reported UV photodetectors based on pure binary metal oxide NWs, stretchable or not, usually display a very low response speed, which greatly limits their practical applications.

Recently, one research group from the Institute of Semiconductors, Chinese Academy of Sciences, presented an interesting SnO2-CdS NW interlaced structure to fabricate stretchable UV photodetectors with high response speed in Science China Materials (DOI: 10.1007/s40843-019-9416-7).

Systematic investigations reveal that the interlaced-nanowire based photodetectors have lower dark current and much higher response speed (more than 100 times) compared with pure SnO2 nanowire based photodetectors. The relevant carrier generation and transport mechanism were also discussed. In addition, due to the formation of waved wrinkles on the surface of the NWs/PDMS layer during the prestretching cycles, the SnO2-CdS interlaced NW photodetectors display excellent electrical stability and stretching cyclability within 50% strain, without obvious performance degradation even after 150 stretching cycles. As a simple and effective strategy to fabricate stretchable UV photodetectors with high response speed, the interlaced nanowire structure can also be applied to other NW pairs, like ZnO-CdS interlaced-NWs.

Prof. Guozhen Shen said: "Our method provides a versatile way to fabricate high speed ultraviolet photodetectors with interlaced metal oxide nanowires-CdS nanowires, which is potential in future stretchable and wearable optoelectronic devices."
This research was funded by the National Natural Science Foundation of China (61625404, 61888102 and 61574132), and the Key Research Program of Frontier Sciences, CAS (QYZDY-SSWJWC004).

See the article: Ludong Li, Zheng Lou, Haoran Chen, Ruilong Shi and Guozhen Shen, "Stretchable SnO2-CdS interlaced-nanowire film ultraviolet photodetectors", Science China Materials. doi: 10.1007/s40843-019-9416-7

Science China Press

Related Photodetectors Articles from Brightsurf:

Optoelectronic detectors capable of perceiving light intensity and color
Current optoelectronic detectors are only able to perceive light intensities.

Cascade amplified upconversion luminescence facilitating narrow band NIR photodetection
Facing the fact that selective detection of multiple narrow spectral bands in the near-infrared (NIR) region still poses a fundamental challenge.

Research lays groundwork for ultra-thin, energy efficient photodetector on glass
Though we may not always realize it, photodetectors contribute greatly to the convenience of modern life.

Scientists develop method to detect charge traps in organic semiconductors
Scientists at Swansea University have developed a very sensitive method to detect the tiny signatures of so called 'charge traps' in organic semiconductors.

A versatile photodetector assisted by photovoltaic and bolometric effects
A versatile photodetector based on MoTe2/VO2 heterostructure integrates photovoltaic and bolometric effects.

Scientists develop detector for investigating the sun
Researchers from MIPT have developed a prototype detector of solar particles.

Thin and ultra-fast photodetector sees the full spectrum
Researchers have developed the world's first photodetector that can see all shades of light, in a prototype device that radically shrinks one of the most fundamental elements of modern technology.

CU student helps bridge teams at Clemson
Three teams of researchers at Clemson University have joined forces to unravel some of the mysteries surrounding perovskite nanocrystals, which are semiconductors with numerous applications, including LEDs, lasers, solar cells and photodetectors.

Coffee stains inspire optimal printing technique for electronics
Using an alcohol mixture, researchers modified how ink droplets dry, enabling cheap industrial-scale printing of electronic devices at unprecedented scales.

Strainoptronics: A new way to control photons
Researchers discovered a new way to engineer optoelectronic devices by stretching a two-dimensional material on top of a silicon photonic platform.

Read More: Photodetectors News and Photodetectors Current Events is a participant in the Amazon Services LLC Associates Program, an affiliate advertising program designed to provide a means for sites to earn advertising fees by advertising and linking to