Electrochemical Society names NJIT electrical engineer Fellow For Achievement

October 31, 2006

Durga Misra, PhD, a professor in the electrical and computer engineering department at New Jersey Institute of Technology (NJIT), was named a Fellow of the Electrochemical Society. Misra is one of 14 newly selected fellows in 2006 recognized for their individual contributions and leadership in the achievement of science and technology in the area of solid-state sciences and electrochemistry.

Misra's research focuses on semiconductor devices and integrated circuits for nanoelectronics. He develops materials and processes to enhance the performance and reliability of nanoscale semiconductor devices. His research aims to decrease the cost and size of the devices. Applications for these high-performance and low power semiconductor devices include creating more powerful and efficient wireless communication tools and computing systems for the commercial market, national defense and homeland security.

Misra's work has appeared in more than 18 scholarly journals and it frequently is published in The Journal of Electrochemical Society Electrochemical and Solid State Letters. Misra is vice-chair of the dielectric science and technology division of the Electrochemical Society and associate editor of IEEE Circuits and Devices, a magazine published by Institute of Electronic and Electrical Engineers (IEEE). He is a distinguished lecturer of IEEE Electron Device Society.

Misra, a resident of Basking Ridge, joined the NJIT faculty in 1988. He earned a doctorate in electrical engineering from University of Waterloo, Canada, a master's in solid-state materials from the Indian Institute of Technology, New Delhi, and a master's in physics from Utkal University, Orissa, India.

The Society recognized Misra for his pioneering research on understanding and minimizing process induced damage mechanisms in metal-oxide-semiconductor devices and silicon-germanium devices and materials. The honor also applied to his study of the reliability of gate oxide in MOS devices through the incorporation of deuterium.

New Jersey Institute of Technology

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