Articles tagged with Organic Memory
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Researchers from Ohio State University have developed shiitake-based devices that can act as organic memristors, a type of data processor. These devices demonstrated similar reproducible memory effects to semiconductor-based chips and showed potential for creating low-cost, environmentally friendly brain-inspired computing components.
A team at Osaka Metropolitan University has designed a multilayer device to investigate spin currents, using an organic semiconductor material with a long spin relaxation time. This allows direct observation of phenomena due to spin current generation and enables researchers to gain deeper insights into the properties of spin currents.
Researchers developed a new reading method for SOT-RAMs that can nullify the readout disturbance, reducing it by at least 10 times. The method involves creating a bi-directional read path, cancelling out the disturbances produced by spin currents.
Researchers at Skoltech have designed a photosensitive bismuth complex that can be used as an advanced optically triggered material for memory devices. The device can switch between two quasi-stable electrical states in response to light and electric bias, enabling high-density data recording.
Researchers have developed organic memristors that could enable ultralow energy computing and brain-inspired electronics. The new generation of organic memristors is made from metal azo complex devices and has shown stability and reproducibility.
A new type of programmable organic capacitive memory called pinMOS is introduced, which stores several states due to controllable charge addition or removal. The pinMOS memory is promising for future applications in electronic and photonic circuits.
Researchers from Skoltech have identified relationships between photochromic material structure and device electrical performance. The study found that certain molecular structures improve switching speed and reliability, paving the way for the development of new organic memory elements.
Researchers at KAIST developed ultra-flexible organic flash memory that can be applied to non-conventional substrates like plastics and papers. The memory technology exhibits a significantly-long projected retention rate with programming voltages on par with industrial standards.
Researchers from NUS have developed a novel organic thin film that stores and processes data for 1 trillion cycles, significantly outperforming existing flash memory devices. The new device consumes 1,000 times less power and has the potential to be made even smaller.
Researchers at KIST developed a 64-bit, non-volatile memory cell array using flexible and twistable carbon nano material and organo-polymer compound. The 1D-1R architecture enables accurate data storage and retrieval in a curved state.
Researchers at Hebrew University of Jerusalem developed magnetless spin memory, allowing for miniaturization of memory bits to single nanoparticles. This technology could lead to universal memory-on-chip production with high density and low power consumption.
A team of researchers at the University of Washington has discovered an organic ferroelectric molecule with promising properties for memory, sensing, and energy storage. The molecule offers a range of benefits, including lower costs, flexibility, and reduced toxicity.
Researchers at Northwestern University have developed a new class of organic materials that can be used for ferroelectricity, which could improve computer memory and sensing devices. The discovery could save $6 billion in electricity costs annually if used in cloud computing.
Researchers found that organic memory transistors retain their on/off states over a wider voltage range when heated, despite initial decreases in memory window. This temperature-dependent behavior could be useful for applications such as temperature sensing.
Scientists at Rice University develop a new technology that uses disordered nanowires and organic molecules to create functional memory devices. These 'NanoCells' can store information for more than a week without refreshment, far longer than traditional DRAM.