Articles tagged with Domain Walls
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Researchers from the University of Warsaw and the University of British Columbia have discovered a new type of exotic quantum excitation called a lone spinon. This finding deepens our understanding of magnetism and could have implications for the development of future technologies such as quantum computers.
Researchers at Flinders University and UNSW Sydney develop a breakthrough approach to create memristor-like devices inspired by the human brain. These devices can store and process information at varying levels, enabling multi-level data storage and eliminating repetitive wall injection or erasure.
Researchers successfully visualized tiny magnetic regions, known as magnetic domains, in a specialized quantum material using nonreciprocal directional dichroism. They also manipulated these regions by applying an electric field, offering new insights into the complex behavior of magnetic materials at the quantum level.
Researchers at UC Davis have found that ultrafast laser pulses can significantly reduce the energy needs of data storage. The pulses accelerate magnetic domains, allowing for faster and more stable memory storage. This technology has the potential to revolutionize spintronic devices such as hard disk drives.
Researchers have developed a new technique to understand the relationship between atomic structure and electric polarization in 2D van der Waals ferroelectric materials. This discovery is expected to revolutionize domain engineering in these materials, positioning them as fundamental building blocks for advanced devices.
A new study at BESSY II analyzed the formation of skyrmions in ferrimagnetic thin films of dysprosium and cobalt. The researchers directly observed Néel-type skyrmions using scanning transmission X-ray microscopy, revealing their domain wall type for the first time.
A recent study presents an exciting new way to measure the crackling noise of atoms in crystals, enabling the investigation of novel materials for future electronics. The method allows researchers to study individual nanoscale features and identify their effects on material properties.
Researchers from Spain, France, and Germany generate a single domain wall on a half metal nanowire and measure significant resistance changes. The study reveals large magnetoresistance effects in La2/3Sr1/3MnO3 nanowires, holding promise for spintronic applications.
Researchers have discovered a way to construct and control oxygen-deprived walls in nanoscopically thin materials, which can store data in multiple electronic dialects. These walls can retain their data states even when devices turn off, paving the way for next-gen electronics with enhanced memory capabilities.
Researchers use coherent correlation imaging to image the evolution of magnetic domains in time and space without prior knowledge. The study reveals thermal motion and pinning effects on domain boundaries, unlocking new insights into magnetism's microcosm.
Scientists have discovered a new type of skyrmion with half-integer topological numbers in a ferromagnetic superfluid, challenging the current understanding of these phase defects. This discovery could lead to a major breakthrough in skyrmion research and its applications in particle physics and spintronics.
The study reveals that particles can behave as bosons in one region and fermions in another, leading to striking phenomena like particle trapping or fragmentation. This discovery opens up a window to engineer and control new kinds of collective motion in the quantum world.
Researchers created 3D DNA-like structures using advanced 3D printing and microscopy, discovering nanoscale topological textures in the magnetic field. This breakthrough enables control over magnetic forces on the nanoscale, promising new possibilities for particle trapping, imaging techniques, and smart materials.
Researchers at Penn State have found that the conventional wisdom about the relationship between domain size and piezoelectricity in ferroelectric materials is not always correct. In contrast to existing data suggesting smaller domains lead to higher piezoelectricity, this new study shows larger domain sizes can actually result in bett...
Researchers have discovered a way to induce magnetic waves in antiferromagnets using ultrafast laser pulses, potentially leading to faster and more efficient data storage. This technology could endow materials with new functionalities for energy-efficient and ultrafast data storage applications.
Researchers demonstrate Slater mechanism using pyrochlore oxide, a compound with minimal other metal-insulator transition mechanisms. The study provides new insights into fundamental questions about material behavior and has potential applications in spintronics.
Scientists studied how the cross-sectional geometry of 3D nanowires affects domain wall dynamics and Walker breakdown phenomenon. The research found that oscillatory behavior can be explained by energy changes due to deformation during rotation, promising new possibilities for nano-oscillators and radiofrequency electromagnetic radiation.
Researchers developed a concept for a new storage medium based on antiferromagnetic materials, which can store binary values (0 or 1) through controlled manipulation of domain walls. The proposed method could potentially replace conventional ferromagnetic systems with faster and more energy-efficient data processing.
Researchers quantify topological protection in photonic edge states using a valley photonic crystal, measuring negligible radiative losses and significant loss in standard waveguides. The study provides insights into the robustness of topologically non-trivial states.
Researchers manipulate ferroelectric domain walls in bismuth ferrite thin films using piezoresponse microscope, achieving oriented growth and configuration control. The study provides a generalizable approach for DW dynamic studies and advanced tunability of conductive DWs.
Researchers at FLEET have made a significant step in solving the primary challenge of information stability in domain-wall nanoelectronic data storage. By introducing designer defects, they were able to clamp down domain walls, effectively preventing ferroelectric domain relaxation and promoting superior polarisation retention.
Researchers from the University of Jyväskylæ have discovered that moving domain walls in superconducting devices generate voltage, causing losses. This finding has significant implications for magnetic racetrack memory applications, which require low current resistance.
MIT researchers have devised a novel circuit design that enables precise control of computing with magnetic waves, without any extra components or electrical current. This approach leverages the spin wave property in magnetic materials to produce measurable output that can be correlated to computation.
Scientists at the University of Groningen observed a phenomenon in ferroelastic material barium titanate that resembles spatial chaos in non-linear dynamical systems. This could lead to highly diverse responses in adaptable neuromorphic electronics, enabling complex computing.
Researchers have developed a permanent static negative capacitor that can redistribute electricity on a small scale, improving computing efficiency. The device works as a steady-state, reversible system, allowing for controlled voltage distribution and increased energy efficiency.
Researchers at Immanuel Kant Baltic Federal University developed a method to control the static and dynamic properties of amorphous ferromagnetic microwires by adjusting internal mechanical stress. The study improves understanding of these materials and their potential applications in various fields.
Scientists have successfully generated and controlled extremely short-wavelength spin waves, a promising alternative to traditional electronic data processing. The discovery could enable the development of more compact microchips with reduced energy consumption.
Emerging research on topological structures and their potential applications in nanotechnology and nanoelectronics is reviewed in Nature Materials. Topological defects, such as domain walls, can exhibit intrinsic properties and significantly affect material properties.
A team demonstrated an x-ray imaging technique that can image antiphase magnetic domains in antiferromagnets, a key step towards controlling their magnetic structure. This could lead to the development of smaller, faster, and more robust electronics using spintronics.
Researchers have discovered a way to make a thin material that enhances the flow of microwave energy by exploiting domain walls. This discovery could improve telecommunications by expanding the range of frequencies used as communications channels.
Researchers at Berkeley Lab discovered chirality in domain walls of amorphous materials, which could enable faster, smaller data storage. The study used high-resolution microscopy techniques to confirm nanoscale magnetic features, opening possibilities for controlling magnetic domains with temperature and light.
Three new classes of domain walls have been discovered in helimagnets, characterized by topological defects. These domain walls exhibit exotic magnetic properties that could be used for future data transfer and storage technologies. Researchers are now attempting to direct these walls with an electric current.
Researchers at NUST MISIS developed a theory explaining how latent state formation occurs in layered tantalum disulfide, leading to ultra-fast memory capabilities. The material's nano-structural mosaics and charged vacancies contribute to its switching and memory effects.
Researchers from Max Planck Institute have discovered anti-skyrmions, tiny magnetic objects that can store digital data in a new class of materials. These topologically protected magnetic walls could enable the development of Racetrack Memory with no moving parts.
Researchers at the University of Nottingham have made a groundbreaking discovery in the search for energy-efficient information storage. By controlling the chirality of magnetic domain walls using an electric field, they have opened up new possibilities for non-volatile information processing and storage technology.
Researchers at Helmholtz-Zentrum Berlin have developed a new switching process for non-volatile spintronics devices using asymmetric nanorings. The process involves applying a short magnetic field pulse, which leads to an intermediate 'onion state' and subsequently results in a stable opposite magnetization of the ring.
Scientists investigate the motion of vortex domain walls in ferromagnetic nanowires driven by magnetic fields. The research aims to improve control and reliability for spintronic devices, enabling logic gates and data storage.
Researchers from the University of Pennsylvania demonstrate a multiscale simulation of lead titanate oxide, providing new understanding of polarizations within these materials. The study shows that domain walls move across ferroelectric materials like wildfire, but can be easily stopped once the electric field is removed.
The Volkswagen Foundation has selected four research projects from over 200 applications, focusing on young academics and independent of current conflicts. The projects cover Slavonic Studies, Hydrosciences, Mathematics, and Physics, with a particular emphasis on transboundary rivers and domain wall conductivity.
Researchers at HZDR have developed a method for controlling the propagation of spin waves in a targeted and simple way, creating a basis for nanocircuits that use spin waves. This approach uses magnetic domain walls and small external magnetic fields to manipulate the course of spin waves, enabling efficient information processing.
A study by Tohoku University researchers has clarified how external driving forces, such as magnetic fields and electric currents, affect magnetic structures. The findings suggest that the actions of these forces on the structure are fundamentally different.
Researchers at PTB have successfully measured the thermoelectric properties of a single magnetic domain wall, a breakthrough that opens up new possibilities in spin caloritronics. The study reveals that the presence or absence of the domain wall leads to a measurable change in the thermoelectric voltage generated by the wire.
Scientists at ETH Zurich have developed a technique to manipulate domain walls in multiferroic materials, which could lead to new technologies in data storage and electronics. The discovery shows that domain walls can be selectively shifted or altered using electrical fields, paving the way for new applications.
Berkeley Lab researchers have discovered topologically protected one-dimensional electron conducting channels at the domain walls of bilayer graphene. These conducting channels feature a ballistic length of about 400 nanometers at 4 kelvin, making them suitable for applications such as quantum computing.
Researchers at Berkeley Lab found a technique to switch magnetic domain wall chirality, paving the way for desired electronic memory and logic functions. This breakthrough could lead to smaller, faster, and more energy-efficient devices through solid-state magnetic memory.
Physicists at the University of Groningen have discovered a new manganese compound produced by tension in the crystal structure of terbium manganese oxide. The discovery could lead to the creation of new nanoscale circuits.
Researchers have developed a powerful imaging tool to study electrically anomalous regions called domain walls in ferroelectric materials. The technique, X-PEEM, reveals enhanced electronic conduction properties in tail-to-tail domain walls, which are crucial for improving solar panels and other applications.
Researchers at Johannes Gutenberg University Mainz have achieved a breakthrough in inducing synchronous motion of domain walls in ferromagnetic nanowires using pulsed magnetic fields. This allows for controlled displacement of domain walls, essential for permanent data storage.
Researchers at Johannes Gutenberg University Mainz directly observe magnetization dynamics in magnetic nanowires, discovering oscillating domain wall velocities. The study's findings have important implications for the development of ultra-fast rotating sensors and new information storage mediums.
An international team has found a surprising effect that leads to spatially varying magnetization manipulation on an ultrafast timescale in ferromagnetic materials. This discovery could be key to further miniaturization and performance increase of magnetic data storage devices.
Researchers at Berkeley Lab create high-voltage photovoltaic effects in ferroelectric materials using an electronic bucket brigade. The study reveals a simple, periodic domain structure that enables efficient charge transport and increased voltage output.
Researchers discovered that domain walls in ferroelectric materials act as dynamic conductors, enabling tunable and metastable memory functionality. This discovery could lead to a new paradigm of electronic memory storage.
Researchers at Helmholtz-Zentrum Berlin have developed a method to image the full spatial structure of magnetic domains deep within materials. They exploit domain walls, where magnetic fields deflect neutrons slightly from their path, allowing for the creation of 3D images.
Researchers design and characterize a field-switchable nanomagnetic atom mirror, which can manipulate atoms by applying magnetic fields. The technology could be applied to devices that trap and confine atoms, potentially leading to breakthroughs in quantum computing.
Researchers found that flaws in magnetic nanowire structure impact device operating speed. Disorder in the wire enables domain walls to move faster, affecting future experiment interpretation.
Researchers at Lawrence Berkeley National Laboratory found a new path for sunlight to electricity conversion in semiconductor thin-films, overcoming the bandgap voltage limitation. By applying an electric field, they can manipulate the crystal structure and control photovoltaic properties.
Scientists have discovered a unique property of domain walls in bismuth ferrite, allowing them to conduct electricity at room temperature. This discovery could lead to the development of future electronic devices with shrunk logic and memory functions.
The coercivity mechanism of HDDR Nd-Fe-B permanent magnetic alloy is greatly related to its microstructure defect at the grain boundary, according to the study. For a fixed lex, coercivity reaches maximum at 2r0/lex=1.67, controlled by pinning and nucleation mechanisms.
A multi-scale modeling study at Penn reveals a new theory of behavior for domain-wall motion in ferroelectric materials, reproducing experimental data long at odds with existing theories. The study confirms that small dipoles play a key role in smoothing transition regions as the wall moves.
A team of researchers, led by Lehigh University's Volkmar Dierolf, has received a $1.2-million grant to study the nanostructure of ferroelectric domains. They aim to image and control these domains at the nanoscale to engineer devices.