Articles tagged with Schottky Barriers
Researchers at Nagoya University have developed a new method to create gallium oxide semiconductors with stable p-type layers, allowing for twice the current capacity of previous devices. This breakthrough enables improved energy efficiency, reduced waste, and lower operating costs for electronics.
The article reviews static and dynamic approaches to adjust Schottky barrier height in semiconductor devices. Dynamic techniques include surface modification and external electric fields.
Researchers developed AlN diodes and transistors that can function above 300°C, with a record-breaking operation temperature of 827°C. The new devices were fabricated using sapphire substrates and nickel electrodes, which remained stable at high temperatures.
The SF State team has created a broadband nanoscale photodetector using bismuth-MoS2 materials, showing improved sensitivity in the UV range and responsiveness over a wide wavelength range. The device is also fast, working at around 10 kilohertz and potentially scalable to megahertz or gigahertz speeds.
Chung-Ang University researchers identify direct electron tunnelling as dominant mechanism of noise in organic photodetectors, enabling enhanced detection speed and improved image sensor performance. The discovery paves the way for miniaturized image sensors with curved designs and omnidirectional sensing capabilities.
Researchers from SUTD discover a family of 2D semiconductors with Ohmic contacts, reducing electrical resistance and generating less waste heat. This breakthrough could pave the way for high-performance and energy-efficient electronics, potentially replacing silicon-based technology.
A research team from Singapore University of Technology and Design has discovered a new strategy to resolve contact resistance in 2D semiconductor devices. They found that an ultrathin film of Na3Bi can be used as a metal contact with low contact resistance, retaining the intrinsic electronic properties of 2D semiconductors.
Newly developed transistors harness near-off-state current to operate, reducing power consumption to below a billionth of a watt. This enables long-term operation without batteries, ideal for wearable and implantable devices in the Internet of Things.