Researchers from Osaka University have discovered a connection between strain equations for atomic dislocations and the Biot-Savart law in electromagnetism. This link enables researchers to use a well-known formula to analyze the effects of dislocations, leading to new findings on material science.
Researchers found that L-cystine crystals form stacked hexagonal 'islands' with one screw dislocation, contradicting long-standing BCF theory. However, further analysis revealed that the crystals actually grow in a manner predicted by the theory, showcasing the complexity of crystal growth.
A team of researchers at MIT has discovered a set of general principles that explain the sudden increase in material strength as strain rate increases. This phenomenon, known as flow-stress upturn, has broad implications for understanding materials' behavior under various types of stresses.