Articles tagged with Carrier Mobility
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Researchers developed three-dimensionally shaped molecules containing an internal twist, exhibiting properties of organic semiconductors. The molecule was verified to act as an organic semiconductor in an organic field-effect transistor.
Researchers at UC Santa Barbara have found that in 2D semiconductors, the interactions between electrons and phonons can conserve momentum and energy, leading to efficient hydrodynamic flow behavior. This discovery has significant implications for designing highly efficient electrical conductivity materials, even at room temperature.
Scientists have discovered a material that can harness waste heat, increasing energy efficiency and sustainability. The researchers found that thinner cadmium arsenide films exhibit higher thermoelectric sensitivity, allowing for more efficient cooling in cryogenic environments.
Researchers developed a novel scanning electron microscopy technique to visualize instantaneous material states in high-speed devices. The method achieves resolutions of up to 43 picoseconds, allowing for the measurement of electrical circuit performance across GHz frequencies.
Scientists at POSTECH create conducting polymers with exceptional electrical conductivity, rivaling graphene's performance. The breakthrough achieves ultrafast electron mobility and long phase coherence length, overcoming a major challenge in organic semiconductors.
A new instrument called CLIMAT was developed by HZB physicist Dr Artem Musiienko to characterise semiconductors. It measures 14 parameters of transport properties in a single measurement, including mobility, diffusion lengths and lifetime, for positive and negative charge carriers.
Researchers at GIST developed high-performance OECT devices based on poly(diketopyrrolopyrrole) (PDPP)-type polymers, achieving high charge carrier mobility and volumetric capacitance values. The optimized material exhibited a figure-of-merit value of over 800 F V^-1 cm^-1 s^-1.
Researchers at Tokyo Institute of Technology have developed a novel ferroelectric semiconductor memory device with a 100 nm channel length, enabling high-density storage and seamless integration with existing semiconductor technologies. The device exhibits typical resistive switching, high on/off ratio, large memory window, and good re...
Researchers investigated the diffusion lengths of charge carriers in metal oxides and found that they are poorly understood. The study analyzed ten metal oxide compounds and found that their mobilities were very low compared to conventional semiconductors. However, heat treatment improved mobility in some materials.
Scientists have identified a dozen new materials with high carrier mobility in 2D semiconductors, which could revolutionize electronic device capabilities. The discoveries were made using quantum-mechanical calculations and are an exception to the conventional wisdom that finding such materials is extremely challenging.
University of Houston researchers have made a groundbreaking discovery in cubic boron arsenide, demonstrating exceptional high carrier mobility. This finding has significant implications for the development of efficient semiconductors, with potential applications in various electronic and optical fields.
Scientists from A*STAR and Fudan University found that placing 2D materials on substrates with bulged morphologies enhances carrier mobility by two orders, paving the way for competitive performance in field-effect transistors and thermoelectric devices. The discovery overcomes the intrinsic carrier mobility limit of the material.
Scientists have measured the Hall effect and used optical techniques to reveal high ambipolar mobility in c-BAs, exceeding 1550 cm² V⁻¹ s⁻¹. The material's ultrahigh thermal conductivity makes it a promising candidate for improving CPU speeds.
Researchers have experimentally demonstrated high carrier mobility in cubic boron arsenide, a crucial advance for next-gen electronics. The material offers promise for applications requiring both high electron and hole mobility.
Researchers have discovered stable and mobile excitons in metal, a breakthrough that could speed up digital communication. Excitons can travel rapidly through metal without electrical charge, making them promising candidates as an alternative to free electrons.
Researchers from Tokyo University of Science developed a high-quality crystalline interface using quasi-homo-epitaxial growth, which eliminated mobility issues and enabled spontaneous electron transfer. This breakthrough could lead to highly efficient flexible solar cells and wearable electronic devices.
Researchers have developed a novel method to improve photovoltaic performance in perovskite solar cells by modifying grain boundaries with 2D materials. The modifications lead to enhanced carrier mobility and stability, even under certain conditions where grain boundaries are favorable for device performance.
Researchers have designed a smart electronic skin and medical robotic hand that can assess vital diagnostic data using a newly invented rubbery semiconductor with high carrier mobility. The material is scalable for manufacturing and retains electrical performance even when stretched by 50%.
Researchers at IBS have successfully fabricated a single layer graphene film on large area copper foils with no adlayers, achieving adlayer-free and single crystal graphene. This breakthrough enables the creation of high-performance devices with consistent uniformity in the number of layers over large areas.
Researchers have developed advanced stretchable electronics, including rubbery integrated circuits and sensory skins, using metallic carbon nanotubes to improve carrier mobility. This breakthrough could lead to significant advances in smart devices like robotic skins and human-machine interfaces.
Researchers predict few-layer Tellurium (FL-α-Te) as a superior semiconductor to black phosphorus due to its high carrier mobility, tunable bandgap, and strong light absorption. FL-α-Te exhibits anisotropic inter-chain vibrational behaviors and nearly isotropic strong light absorption, making it an ideal material for thermoelectrics.
Scientists at Rensselaer Polytechnic Institute successfully grow strain-free germanium films on mica using van der Waals forces, overcoming the challenge of lattice mismatch. This breakthrough enables the growth of relaxed films with potential applications in high-efficiency solar cells and advanced electronic devices.
Researchers at the University of Houston have discovered a new mechanism to boost performance in thermoelectric materials by increasing carrier mobility, enabling more efficient electricity generation from waste heat. The work expands the potential of magnesium-antimony materials for use in thermoelectric devices.
Researchers discovered a procedure to restore defective graphene oxide structures, leading to the formation of highly crystalline graphene films with excellent band-like transport. The method involves applying high-temperature reduction treatment in an ethanol environment, resulting in a carrier mobility of ~210 cm2/Vs.
The new device boasts twice as fast 'carry mobility' as previous experimental p-type transistors and almost four times as fast as commercial ones. It features a trigate design, which could solve problems at extremely small sizes, and is made from germanium.