Articles tagged with Epitaxy
Researchers at RIKEN Center for Emergent Matter Science have created a new superconducting thin film from iron telluride, suitable for quantum computing applications. The film's unique crystal structure, resulting from intentional misalignment of atomic layers, reduces lattice distortion and enables low-temperature superconductivity.
Researchers developed a new atomically layered material that reduces resistivity by five orders of magnitude when oxidized, exceeding similar non-layered materials. The team discovered a synergy between oxidation and structural modification driving dramatic changes in physical properties.
Researchers at Nagoya University have developed a new method to create gallium oxide semiconductors with stable p-type layers, allowing for twice the current capacity of previous devices. This breakthrough enables improved energy efficiency, reduced waste, and lower operating costs for electronics.
Researchers developed a new growth method leveraging 2D materials as templates to enable the synthesis of perfectly single-crystal TMD films on any substrate. The 'Hypotaxy' technique holds significant industrial potential, allowing for low-temperature growth and precise control over film thickness.
A recent study published in Nature Communications has reported a method for determining the location of hydrogen in nanofilms. The researchers used nuclear reaction analysis and ion channeling to generate two-dimensional angular mapping of titanium hydride nanofilms, precisely locating both hydrogen and deuterium atoms.
Researchers from Tokyo Institute of Technology experimentally revealed that high-density Ca introduction enhances superconductivity in graphene-calcium compounds through confinement epitaxy, leading to increased critical temperatures. This breakthrough could enable the development of C6CaC6 superconductors with wide applicability in qu...
GIST researchers found that nano-sized pits on AlN surfaces cause graphene degradation at higher temperatures, leading to GaN film exfoliation failure. The study's results demonstrate the importance of substrate chemical and topographic properties for successful remote epitaxy.
Scientists at North Carolina State University have successfully grown high-quality thin films of the recently discovered superconductor material KTaO3. The researchers found that the material retains its superconducting properties even when exposed to extremely high magnetic fields.
Researchers developed AlN diodes and transistors that can function above 300°C, with a record-breaking operation temperature of 827°C. The new devices were fabricated using sapphire substrates and nickel electrodes, which remained stable at high temperatures.
A University of Minnesota team creates high-quality metal oxide thin films from historically difficult-to-synthesize metals using a breakthrough method that stretches the metals at the atomic level. This innovation paves the way for scientists to develop better materials for various next-generation applications.
Researchers aim to understand and utilize quasiparticles called excitons, which can transport energy without a net electric charge. The goal is to design energy-efficient systems that detect and emit light across a wide range of frequencies.
Scientists have created a new class of nonvolatile memory devices using antiferromagnets that can store stable memory states and read them incredibly quickly. This breakthrough could lead to faster memory devices with performance beyond the terahertz regime.
A University of Minnesota-led team has discovered a new method for making thin films of perovskite oxide semiconductors, enabling the creation of freestanding membranes with unique properties. The breakthrough technology could lead to the development of faster, more efficient electronic devices and components.
Researchers at Penn State have created a two-dimensional heterostructure by combining a topological insulator with a monolayer superconductor, demonstrating topological superconductivity and Ising-type superconductivity. The hybrid structure could pave the way for more stable quantum computers and explore Majorana fermions.
Researchers develop new epitaxial growth mechanism to achieve large-scale single-crystal WS2 monolayers, overcoming a crucial hurdle in replacing silicon with 2D materials. The technique enables uniform alignment of small crystals and leads to the successful growth of wafer-scale single-crystals of WS2, MoS2, WSe2, and MoSe2.
Borophene, a 2D version of boron, can be synthesized on hexagonal boron nitride using weak van der Waals forces. This method allows for easier removal and evaluation of the material for its plasmonic and photonic properties, as well as its electronic properties relevant to superconductivity.
Researchers at NTNU have developed a method for making ultra-high material efficient solar cells using semiconductor nanowires, which could potentially double the efficiency of today's Si solar cells. The new technique uses gallium arsenide (GaAs) material in a very effective way through nanostructuring.
UNSW researchers stabilize a new intermediate phase in a room-temperature multiferroic material under stress, boosting electromechanical response by double its usual value. This breakthrough has exciting implications for next-generation devices and provides a valuable technique for international material scientists.
Stephanie Law, associate professor of materials science and engineering, received the Young Investigator Award for advances in growing novel optical materials, including heavily doped semiconductors and topological insulators. The award recognizes her work on improving material quality for infrared and terahertz optics and plasmonics.
Researchers develop process called remote epitaxy to manufacture flexible semiconducting films on a large, thick wafer. The team can then peel away the film, reuse the wafer, and create multiple functionalities in a cost-effective way.
Researchers at KAUST have developed a novel induction heating structure that improves the efficiency and uniformity of MOCVD reactors. This innovation enables the production of high-quality boron nitride and aluminum nitride materials, which are crucial for flexible electronics, ultraviolet optoelectronics, and power electronics.
Scientists at Rensselaer Polytechnic Institute successfully grow strain-free germanium films on mica using van der Waals forces, overcoming the challenge of lattice mismatch. This breakthrough enables the growth of relaxed films with potential applications in high-efficiency solar cells and advanced electronic devices.
Researchers at the University of Illinois have discovered a new paradigm in epitaxy by growing nanowires on graphene. The self-assembled wires have a unique core-shell structure, which is spontaneous and produces a perfect interface. This finding has significant implications for advanced electronics applications.
Researchers at the University of Leeds have increased the operating temperature of a terahertz quantum cascade laser by nearly ten degrees, bringing handheld devices a step closer to reality. This breakthrough could unlock opportunities in fields like industrial process monitoring, atmospheric science, and medicine.
The Lehigh group achieved breakthroughs in near-infrared-range (1300-nm) InGaAsN quantum well lasers using metalorganic chemical vapor deposition (MOCVD). Their findings have the potential to lead to the production of low-cost and high-performance 1300-nm VCSELs capable of a transmission rate of 10 GB per second.