Articles tagged with Magnetoresistance
Researchers developed a high-entropy oxide tunnel barrier for MTJs, demonstrating stronger perpendicular magnetization and lower electrical resistance. This breakthrough may lead to smaller, faster, and more efficient hard disk drives and magnetoresistive random access memory devices.
Researchers provide experimental evidence for universal unusual magnetoresistance, attributing it to interfacial electron scattering governed by magnetization and electric field. The two-vector magnetoresistance model offers a unified framework for understanding magnetoresistance in diverse spintronic systems.
Researchers at NIMS developed a new theory explaining the oscillation of tunnel magnetoresistance (TMR) with changes in insulating barrier thickness. The theory resolves a long-standing mystery, providing insights into achieving even higher TMR ratios for enhanced magnetic memory and sensor applications.
Researchers at Tohoku University have achieved the world's lowest write power of 156 fJ in 75° canted SOT devices, reducing write power by 35% compared to current technologies. The breakthrough demonstrates high-speed and field-free writing capabilities for SOT-MRAM.
A team led by Junichi Shiogai successfully observes the superconducting diode effect in an Fe(Se,Te)/FeTe heterostructure, exhibiting rectification under various temperature and magnetic fields. This breakthrough paves the way for ultra-low energy electronics built from superconductors.
Researchers observed a significant anomalous Hall effect at temperatures above the magnetic transition temperature in SrCo6O11, which exhibits unique spin-fluctuation phenomenon. This large effect is attributed to intense electron scattering due to spin-flip fluctuations and has implications for magneto-thermoelectric conversion.
Wang Jian's group and collaborators have discovered charge-4e and charge-6e superconducting states in CsV3Sb5 ring devices, marking the first experimental observation of multi-charge superconductivity. These findings open up new perspectives for exploring novel multiple-fermion states.
A new material with enormous magnetoresistance has been discovered, enabling the development of more efficient non-volatile magnetoresistive memory (MRAM) devices. The material, a cobalt-manganese alloy with metastable body-centered cubic crystal structure, exhibits high magnetoresistance ratios at room temperature and near-zero kelvin.
Researchers from Spain, France, and Germany generate a single domain wall on a half metal nanowire and measure significant resistance changes. The study reveals large magnetoresistance effects in La2/3Sr1/3MnO3 nanowires, holding promise for spintronic applications.
Researchers at NIMS developed MTJ device with world's highest TMR performance through precision interfacial control, increasing sensitivity of magnetic sensors and MRAM capacity.
Researchers from the University of Manchester have discovered that graphene displays a remarkably strong response to magnetic fields, reaching above 100% in standard permanent magnets. This is a record magnetoresistivity among all known materials, attributed to the presence of Dirac fermions in high-mobility graphene.
Scientists have discovered a quadratic relationship between the coefficient of T-linear resistivity and transition temperature in FeSe, indicating that spin fluctuations may play a common role in unconventional superconductors. This finding provides insight into high-temperature superconductivity.
Scientists have established a physical model of Berry-curvature-dominated linear positive magnetoresistance (LPMR) in topological materials, providing experimental evidence for the mechanism. The study used cobalt disulfide as a material candidate and proposed temperature-dependent equations that fit previously reported data.
Researchers have successfully demonstrated a strong exchange coupling of thin ferromagnetic layers to the antiferromagnetic compound Mn2Au, enabling large magnetoresistance effects. This breakthrough enables the use of well-established read-out methods in antiferromagnetic spintronics.
Researchers discovered a new topological magnet that can induce a billion-fold change in resistance by rotating the magnetic field angle. This phenomenon, called colossal angular magnetoresistance, enables efficient detection of electronic spin states and opens up new opportunities for spin-electronic applications.
Osaka University researchers developed an ultra-thin film of magnetite with superior crystallinity and conductive properties, overcoming challenges in spintronics technology. The discovery enables the film to undergo a temperature-dependent resistivity change, crucial for implementation in quantum computing technologies.
A RMIT-led collaboration demonstrates large in-plane anisotropic magnetoresistance (AMR) in monolayer WTe2, a quantum spin Hall insulator. The team successfully fabricates devices and observes typical transport behaviors, showing promise for future low-energy electronics.
Scientists create vertical spin valves using 2D van der Waals materials, eliminating the need for a spacer layer. The devices exhibit low resistance-area products and low operating current densities, making them suitable for future spintronics applications.
Researchers at Peking University and Chinese Academy of Sciences discover atomic mechanism of spin-valve magnetoresistance at asymmetry SrRuO3 grain boundary. The study reveals a new strategy to create 2D magnetic order in grain boundaries, which can dominate response in nanoscale devices.
The research team has demonstrated an extended retention time for digital information without an increase in active power consumption. The new magnetic tunnel junction structure increases the interfacial magnetic anisotropy, leading to a high thermal stability factor.
A new multilayer structure with an enhanced magnetoresistance ratio enables the creation of highly sensitive magnetic field sensors. This breakthrough could measure brain activity at room temperature with millisecond resolution.
Undergraduate researchers from Yale-NUS College found that two mathematical models describing magnetoresistance are equivalent, providing a unified framework for understanding the phenomenon. The discovery has implications for future research and practical applications in electronic devices.
Researchers at the University of Minnesota demonstrate a new kind of magnetoresistance involving topological insulators, which could lead to improvements in future computing and computer storage. The discovery doubles magnetoresistance performance at 150 Kelvin compared to heavy metals.
Scientists have discovered a new class of materials with mixed valence states in lead perovskites, exhibiting charge ordering and high thermopower. The study reveals the key to stabilizing these unusual valence states through tuning the energy levels of Pb 6s and TM 3d orbitals.
A Japanese team of researchers has successfully applied a new material, MgGa2O4, to a tunnel barrier in magnetic tunnel junctions (MTJs), achieving large tunnel magnetoresistance ratios and low device resistance. This breakthrough opens the possibility for new spintronic applications.
Scientists at Princeton University have found a common underlying connection between diverse materials exhibiting extreme magnetoresistance. This property could be useful for developing new types of magnetic memory devices.
A new magnetoresistance effect has been discovered in materials with strong spin-orbit coupling, allowing for the study of spin transport properties without complex devices. This effect enables researchers to explore spin currents and their behavior in previously unexplored materials.
Researchers from NUS developed a new hybrid magnetic sensor that is more sensitive to low and high magnetic fields, tunability, and temperature. The sensor has been shown to be more than 200 times more sensitive than commercially available sensors.
Researchers discovered that tungsten ditelluride (WTe2) is electronically three-dimensional with low anisotropy. This finding challenges the material's original assumption of being two-dimensional in nature and opens up new possibilities for nanoscale transistors.
Scientists successfully induced colossal magnetoresistance in pure lanthanum manganite for the first time using high-pressure conditions. The phenomenon occurs when the competition between two phases is at its maximum, driving the transition from an insulator to a metal. This breakthrough has significant implications for harnessing col...
Scientists have discovered a new material that exhibits extremely large magnetoresistance due to its superfast electrons. The material, niobium phosphide, has the potential to revolutionize the design of electronic components, enabling faster processing and storage of data.
Measurements at BESSY II have shown how spin filters form within magnetic sandwiches, enhancing understanding of processes critical for future TMR data storage devices and other spintronic components. The discovery reveals new interfacial effects that strongly influence the amplitude of tunnel magnetoresistance.
Scientists discovered a new material, WTe2, exhibiting unlimited growth in magnetoresistance when exposed to strong magnetic fields. This phenomenon could be useful for detecting magnetic fields in scanners.
Research finds giant magnetoresistance effect is sensitive to semiconductor device size, which affects electron scattering and resistance change under magnetic field application. High-quality semiconductors show larger changes in resistance with smaller devices.
Scientists at Twente University successfully created one-dimensional molecular wires with near-zero electrical conductivity when exposed to a weak magnetic field. The phenomenon is attributed to the Pauli exclusion principle and has potential applications in smartphone technology and hard disk read heads.
Researchers have made a significant breakthrough in understanding manganite conductivity by linking it to the Jahn-Teller effect. At ambient pressure, manganites exhibit insulating properties, but applying intense pressure causes them to transition to a metallic state, which conducts electric charges.
Scientists at Rutgers University discovered a material where an electric field controls the overall magnetic properties, leading to ultra-dense data storage. The effect could revolutionize small-scale magnetic bits and potentially lead to more dense storage devices than current terabyte discs.
Researchers have found surprisingly strong long-range effects in certain electromagnetic nanostructures, which could add new challenges to the design of future ultra-high density data storage devices. The effects extend tens of nanometers and even up to 10 micrometers away from the antiferromagnetic material.
Researchers have developed a prototype card-swipe device that can test for dozens of diseases simultaneously, detecting as few as 800 microscopic particles. The device uses giant magnetoresistance technology, similar to hard drive reads, and could lead to fast and affordable diagnosis in medical settings.
Albert Fert's discovery of giant magnetoresistance has revolutionized the development of spintronics, enabling high-performance magnetic read heads in hard drives. This technology has a significant impact on information and communications technologies.