Articles tagged with Semiconductor Bands
Researchers developed a transistor technology that enables a single device to perform multiple circuit functions simultaneously, simplifying circuit design and increasing data processing speed. The new approach reduces required transistors by 75% and increases data processing speed fourfold.
New research reveals that the organization of electrons within a material determines its response to light. The study shows that moiré superlattices can be engineered to exhibit unusual properties by controlling electron arrangement.
A team of researchers from OIST and Stanford University has demonstrated a powerful new alternative approach to Floquet engineering by showing that excitons can produce Floquet effects more efficiently than light. This breakthrough enables the creation of novel quantum devices and materials with significantly lower intensities.
Researchers at SUTD have discovered that applying pressure can transform angstrom-thin bismuth into a metallic material, eliminating its energy band gap and allowing electrons to move freely. This discovery enables the creation of layer-selective Ohmic contact, which allows electrical current to be steered between layers on demand.
Scientists at OIST use advanced spectroscopy to track the evolution of dark excitons, overcoming the fundamental challenge of accessing these elusive particles. The findings lay the foundation for dark valleytronics as a field, with potential applications in quantum information technologies.
Researchers at Osaka University have developed systematically designed molecules that absorb near-infrared light but not visible light, paving the way for new applications in electronics. The new compounds show promise in areas such as solar cells, transistors, chemotherapy, and photodetectors.
A new atomically-thin material has been discovered that can switch between an insulating and conducting state by controlling the number of electrons. This property makes it a promising candidate for use in electronic devices such as transistors.
Researchers have developed a new technique to dope gallium nitride (GaN), creating high-power electronic devices with reduced energy loss and increased efficiency. This breakthrough enables the use of GaN in compact power electronics for sustainable infrastructure, such as smart grids.
Researchers successfully manipulated energy levels in tungsten diselenide to induce luminescence, a breakthrough for controlling matter through light fields. The discovery could enhance optical properties of organic semiconductors, leading to innovative LED and solar cell applications.
Researchers have confirmed a novel quantum topological material for ultra-low energy electronics, reducing energy consumption by a factor of four. The study reveals the potential of zigzag-Xene-nanoribbons to make topological transistors with robust edge states and low threshold voltage.
Researchers have demonstrated a novel topology arising from losses in hybrid light-matter particles, introducing a new avenue to induce topological effects. The study found that the mere presence of loss in an exciton-polariton system causes it to exhibit nontrivial topology.