The IEEE Award, a bronze medal, a certificate and honorarium will be presented at the awarding ceremony during the International Electron Device Meeting in December of 2005. Established in 1999, the award honors the lifetime achievements of Grove, who was instrumental in founding Intel Corporation.
Ma, who chairs the Department of Electrical Engineering and is co-director of the Yale Center for Microelectronics, will accept the award for his work on the development and understanding of complementary metal oxide semiconductor, or CMOS, gate dielectrics. His research and teaching at Yale have focused on microelectronics, semiconductors, MOS interface physics, ionizing radiation and hot electron effects, advanced gate dielectrics, flash memory device physics, and ferroelectric thin films for memory applications.
After receiving his Ph.D. from Yale University in 1974, Ma did research at IBM on advanced silicon device technology and ionizing radiation effects in MOS devices until joining the Yale faculty in 1977. A member of the National Academy of Engineering, a Fellow of IEEE, a life member of American Physical Society, and a member of Electrochemical Society, and an Honorary Professor of the Chinese Academy of Sciences, Ma is the recipient of several national professional awards.
Ma has served as a consultant for industry worldwide and as the Principal Investigator of joint research and development projects with numerous companies worldwide, including IBM, Intel, Motorola, TI, Sematech, Micron Technologies, Lucent Technology, GE, AMD, Hughes, LSI Logic, Rockwell Semiconductors, JPC, ATMI, PSS, Philips, Siemens, Hitachi, NEC, Toshiba, Mitsubishi Electric, Macronix, and TSMC.
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