A team led by Zhengzheng Liu, Jiajun Luo, and Juan Du has introduced a novel approach for fabricating high-performance near-infrared perovskite light-emitting diodes (NIR-PeLEDs) using a triple-source thermal co-evaporation method . This strategy enables the direct formation of the black-phase α-FACsPbI 3 perovskite and significantly enhances device performance by overcoming the common issues of phase instability, surface roughness, and trap-induced non-radiative recombination in thermally evaporated perovskite films.
Why This Research Matters
Key Design Innovations
Device Performance
FAPbI 3 - and FACsPbI 3 -based NIR-PeLEDs were constructed. Compared to FAPbI 3 devices, FACsPbI 3 -based LEDs showed:
Future Outlook
This work establishes a robust vacuum deposition protocol for preparing high-quality FACsPbI 3 films with tailored phase composition and optoelectronic properties. It serves as a foundation for further integration of perovskite emitters into commercial LED manufacturing lines.
Stay tuned for more innovations from this collaborative team as they advance the scalable fabrication of stable, high-efficiency perovskite-based optoelectronic devices.
Nano-Micro Letters
Experimental study
Efficient Thermally Evaporated Near-Infrared Perovskite Light-Emitting Diodes via Phase Regulation
27-May-2025