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Milli-volt breakthrough: optoelectronic polymer memristors redefine edge computing

10.27.25 | Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

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With the growing demand for edge computing across mobile devices and security systems, conventional electronics are increasingly hindered by high power consumption and complex integration requirements. In response to these challenges, researchers from Nanjing University of Posts and Telecommunications, Nanjing Tech University, and The Hong Kong University of Science and Technology have developed a novel solution based on ultra-low voltage optoelectronic polymer memristors.

Utilising these devices, the researchers constructed a reservoir computing framework which achieved a fingerprint recognition accuracy of 97.15%. The memristors are fabricated via scalable solution-based techniques on flexible substrates, offering both low-cost production and compatibility with large-area flexible electronics, highlighting their potential for widespread adoption in future portable smart systems.

Light Science & Applications

10.1038/s41377-025-01986-9

Optoelectronic polymer memristors with dynamic control for power-efficient in-sensor edge computing

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Contact Information

WEI ZHAO
Light Publishing Center
zhaowei@lightpublishing.cn

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How to Cite This Article

APA:
Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS. (2025, October 27). Milli-volt breakthrough: optoelectronic polymer memristors redefine edge computing. Brightsurf News. https://www.brightsurf.com/news/1WRP65WL/milli-volt-breakthrough-optoelectronic-polymer-memristors-redefine-edge-computing.html
MLA:
"Milli-volt breakthrough: optoelectronic polymer memristors redefine edge computing." Brightsurf News, Oct. 27 2025, https://www.brightsurf.com/news/1WRP65WL/milli-volt-breakthrough-optoelectronic-polymer-memristors-redefine-edge-computing.html.