This technology is a compact silicon carbide transistor that can conduct and block high voltages in both directions, improving efficiency and integration in power electronics for applications like inverters and converters.
Background :
Power electronics is a critical field that underpins a vast array of modern technologies, from renewable energy systems and electric vehicles to industrial automation and advanced power conversion systems. Central to these applications are semiconductor devices such as field-effect transistors (FETs), which control the flow and blocking of electrical current within circuits. As demand for higher efficiency, compactness, and reliability in power systems grows, there is an increasing need for devices capable of handling high voltages and currents while maintaining robust performance. Silicon carbide (SiC) has emerged as a preferred material for such applications due to its superior electrical properties, enabling devices to operate at higher voltages, temperatures, and switching frequencies than traditional silicon-based components. Despite these advances, conventional approaches to achieving bidirectional voltage blocking in high-voltage FETs remain problematic. Standard MOSFETs, while capable of conducting current in both directions when activated, are limited to blocking voltage in only one direction when turned off. This poses significant challenges in applications such as current-source inverters and matrix converters, which require the ability to block voltage in both directions for safe and efficient operation. Existing solutions typically involve integrating two separate SiC chips side by side to achieve bidirectional operation, but this approach results in larger chip sizes, increased manufacturing complexity, and lower yields. The lack of a compact, efficient, and easily integrable bi-directional device hampers the development of more advanced and miniaturized power electronic systems, highlighting the pressing need for innovation in this area.
Technology Overview :
The technology described is a silicon carbide (SiC) lateral high-voltage bi-directional field-effect transistor (FET) designed to conduct current and block voltage in both forward and reverse directions. This device features a novel unit-cell structure that integrates bidirectional functionality at the cell level, rather than relying on the traditional approach of combining two separate chips. The design also incorporates a Schottky diode in each unit cell to enhance conductivity, thereby improving electrical performance. The lateral configuration of the device allows for seamless integration into complex integrated circuits, making it highly suitable for advanced power electronics applications such as current-source inverters and matrix converters, where true bidirectional voltage blocking is essential. What differentiates this technology is its innovative cell-to-cell integration strategy, which significantly reduces chip area and improves manufacturing yield compared to conventional solutions that require side-by-side chip placement. By enabling bi-directional operation within each unit cell, the device achieves greater compactness and efficiency, addressing longstanding limitations in existing SiC MOSFET designs. The lateral architecture further enhances its applicability to integrated circuits, opening new possibilities for high-performance, miniaturized power electronic systems. The integration of the Schottky diode within the cell is a unique feature that optimizes both conduction and blocking capabilities, setting this solution apart from prior art and making it a compelling option for industries demanding robust, efficient, and scalable power semiconductor devices.
Advantages :
Applications :
Intellectual Property Summary : Patent Pending
Stage of Development : TRL 4
Licensing Status : This technology is available for licensing.
About the Research Foundation for the State University of New York:
As the nation's largest research foundation supporting the nation's largest public university system, The Research Foundation for SUNY powers research and innovation to address today's most pressing problems and shape a better future for generations to come. The Research Foundations supports SUNY researchers leading the way globally in AI for the public good, quantum technologies, next-generation semiconductors, biotech and medicine, energy and climate solutions, and more. The Research Foundation for SUNY is a private, nonprofit educational corporation that is tax-exempt under Internal Revenue Code (IRC) Section 501(c)(3). To learn more, please visit us online at rfsuny.org .
About the State University of New York
The State University of New York is the largest comprehensive system of higher education in the United States, and more than 95 percent of all New Yorkers live within 30 miles of any one of SUNY’s 64 colleges and universities. Across the system, SUNY has four academic health centers, five hospitals, four medical schools, two dental schools, a law school, the country’s oldest school of maritime, the state's only college of optometry, 12 Educational Opportunity Centers, over 30 ATTAIN digital literacy labs, and manages one US Department of Energy National Laboratory. In total, SUNY serves about 1.7 million students across its portfolio of credit- and non-credit-bearing courses and programs, continuing education, and community outreach programs. SUNY oversees nearly a quarter of academic research in New York. Research expenditures system-wide are nearly $1.5 billion in fiscal year 2025, including significant contributions from students and faculty. There are more than three million SUNY alumni worldwide, and annually one in three New Yorkers who earn a college degree is a SUNY alum. To learn more about how SUNY creates opportunities, visit suny.edu .