As Moore’s law approaches its physical limits, the semiconductor industry faces mounting challenges in power efficiency, leakage control, and device reliability. Now, researchers from Seoul National University, Kookmin University, Northwestern University, and Texas A&M, led by Professor Ho Won Jang and Professor Yoon Jung Lee, have published a comprehensive review exploring next-generation transistor materials and architectures. This work provides a roadmap for overcoming the limitations of traditional silicon-based devices through innovative material systems and device integration strategies.
Why Novel Transistor Materials Matter
Innovative Design and Features
Applications and Future Outlook
Challenges and Opportunities
The review emphasizes the need for interface engineering, material stability, and CMOS compatibility. Future research will focus on co-optimizing materials, device structures, and system-level integration to realize ultra-scaled, energy-efficient, and intelligent transistor technologies.
This comprehensive review charts a transformative path beyond silicon, highlighting the convergence of novel materials, 3D architectures, and AI-driven design. It underscores the importance of cross-disciplinary innovation in shaping the future of electronics. Stay tuned for more groundbreaking work from Professor Ho Won Jang and Professor Yoon Jung Lee’s teams!
Nano-Micro Letters
Experimental study
Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution
15-Sep-2025