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“Same material, just a flick of the switch”: Electrically tuning next-generation memory performance

09.22.26 | DGIST (Daegu Gyeongbuk Institute of Science and Technology)

□ A research team led by Professor Jung-Il Hong of the Department of Physics and Chemistry at DGIST (President Kunwoo Lee) has successfully used current pulses to alter the spin configuration within a ferrimagnetic material, lowering its “compensation temperature”—the temperature at which opposing magnetizations cancel each other out—by up to approximately 110 K. The team controlled the material’s magnetic properties using only electrical signals, without changing the composition or thickness of the alloy. The technology could have applications in next-generation spintronic memory devices.

□ Ferrimagnets are materials in which two types of magnetization coexist in opposite directions. As temperature changes, the magnitudes of the two magnetizations also change, and at a certain temperature, they exactly cancel each other out. This temperature is known as the “compensation temperature.” Near the compensation temperature, magnetization can be controlled rapidly and efficiently, making this property important for the development of high-speed, high-density memory devices.

□ Traditionally, changing the compensation temperature has required modifying the alloy composition or thin-film thickness or applying additional processes such as heat treatment or ion implantation. However, these approaches make it difficult to modify the magnetic properties at specific locations after a device has been fabricated. They may also alter the material’s structure or composition during processing.

□ The research team utilized “spin-orbit torque,” which is generated by passing an electric current through a multilayer thin film composed of platinum (Pt), iridium manganese (IrMn₃), and cobalt-gadolinium (CoGd). The current alters the spin configuration of IrMn₃, which in turn affects the spin state of the adjacent CoGd and changes its compensation temperature. In other words, the the team altered the material’s magnetic properties by electrically controlling only its internal spin configuration while leaving its composition unchanged.

□ Experimental results showed that the compensation temperature of the Co₀.₅Gd₀.₅ thin film decreased by approximately 70 K, from around 350–360 K to approximately 280–290 K after the current was applied. In the Co₀.₆₈Gd₀.₃₂ thin film, the compensation temperature likewise decreased from approximately 170–180 K to 60–70 K, representing a change of up to approximately 110 K. The research team confirmed that the magnetic properties could be precisely controlled simply by adjusting the intensity and duration of the current pulses.

□ “This study demonstrates that the magnetic properties of a material can vary significantly depending not only on the types and spatial arrangement of its atoms but also on the configuration of its internal spins,” said Professor Jung-Il Hong. “Because the compensation temperature of ferrimagnets can be controlled by adjusting the intensity and duration of current pulses, this approach has significant potential for next-generation spin memory technologies in which different magnetic properties can be created at specific locations.”

□ Researchers Won-Chang Choi and Tae-Bo Sim participated in the study as co-first authors, with Professor Jung-Il Hong serving as the corresponding author. The study was published on August 31, 2026, in Advanced Functional Materials , an international materials science journal ranked in the top 4.2% of journals in its field according to JCR. The research was supported by the National Research Foundation of Korea and the Ministry of Science and ICT’s DGIST R&D Strategic Program.

Advanced Functional Materials

10.1002/adfm.78034

Electrical Tuning of Ferrimagnetic Spin Alignment Angle and Compensation Temperature in Pt/IrMn3/CoGdMultilayers

31-Aug-2026

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Contact Information

Wankyu Lim
DGIST (Daegu Gyeongbuk Institute of Science and Technology)
4everq@dgist.ac.kr

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APA:
DGIST (Daegu Gyeongbuk Institute of Science and Technology). (2026, September 22). “Same material, just a flick of the switch”: Electrically tuning next-generation memory performance. Brightsurf News. https://www.brightsurf.com/news/LQ4Y4758/same-material-just-a-flick-of-the-switch-electrically-tuning-next-generation-memory-performance.html
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"“Same material, just a flick of the switch”: Electrically tuning next-generation memory performance." Brightsurf News, Sep. 22 2026, https://www.brightsurf.com/news/LQ4Y4758/same-material-just-a-flick-of-the-switch-electrically-tuning-next-generation-memory-performance.html.