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Learning on the edge

Researchers developed a new technique that enables on-device training using less than a quarter of a megabyte of memory, reducing the need for powerful computers and central servers. This approach preserves privacy by keeping data on the device, making deep learning more accessible for low-power edge devices.

Magnetic memory milestone

Scientists have successfully switched the state of a bit in memory using spin-orbit torque switching in antiferromagnetic material Mn3Sn, promising faster and more efficient devices. This breakthrough could lead to radical improvements in performance compared to current electronic devices.

SourceUniversity of Tokyo·JournalNature·TypeExperimental study·DateJul 20, 2022

A four-stroke engine for atoms

Scientists have found a new phenomenon where an atomic switch has to be switched back and forth four times to return to its original state. The spin of gadolinium atoms performs one full rotation during this process. This discovery opens up possibilities for material physics and could potentially be used to store information.

SourceVienna University of Technology·JournalNature·TypeExperimental study·DateJul 6, 2022

Researchers find way to make traffic models more efficient

A new method reduces computational complexity of traffic models, making them operate more efficiently. The modified algorithm breaks down complex forecasting questions into smaller problems that can be solved in parallel, significantly reducing run time. This approach also allows for a good enough solution within an error bar, rather t...

SourceNorth Carolina State University·JournalIEEE Transactions on Intelligent Transportation Systems·TypeComputational simulation/modeling·DateMay 5, 2022

Mass production of revolutionary computer memory moves closer with ULTRARAM™ on silicon wafers for the first time

Researchers have successfully demonstrated ULTRARAM¼trade mark computer memory on silicon wafers for the first time, combining non-volatility with speed and energy-efficiency. The technology outperforms previous incarnations, offering data storage times of at least 1000 years and fast switching speeds.

SourceLancaster University·JournalAdvanced Electronic Materials·TypeExperimental study·DateJan 6, 2022

Researchers discover predictable behavior in promising material for computer memory

A team of researchers from Georgia Tech has discovered that zirconium dioxide antiferroelectric material exhibits predictable behavior when miniaturized, following a familiar law similar to ferroelectrics. This finding could lead to the design of more effective memory components and has implications beyond memory applications.

SourceGeorgia Institute of Technology·JournalAdvanced Electronic Materials·TypeObservational study·DateNov 1, 2021

Manipulating tiny skyrmions with small electric currents

Researchers at RIKEN Center for Emergent Matter Science successfully manipulated and tracked individual skyrmions, moving them using a small electric current. The breakthrough could lead to the development of more energy-efficient racetrack memory and neuromorphic computing devices.

SourceRIKEN·JournalScience Advances·DateJun 17, 2020

New optical memory cell achieves record data-storage density

Researchers have demonstrated a new technique that can store more optical data in a smaller space than previously possible on-chip, improving upon the phase-change optical memory cell. The new approach enables storing information in 34 levels, equivalent to 5 bits, and could help meet the growing need for computer data storage.

SourceOptica·JournalOptica·DateDec 20, 2018

Transition metal dichalcogenides could increase computer speed, memory by a million times

Researchers propose using transition metal dichalcogenides (TMDCs) to build faster computers that can process information in femtoseconds, a million times faster than current electronics. TMDCs have the potential to increase computer memory speed by a millionfold due to their unique hexagonal lattice structure and optical properties.

SourceGeorgia State University·JournalPhysical Review B·DateOct 2, 2018

Selective memory

Researchers developed a new cache-management scheme that improves the data rate of in-package DRAM caches, reducing metadata transfer and increasing bandwidth. The 'Banshee' system adds three bits of data to each entry, enabling efficient storage and retrieval of frequently used data.