Articles tagged with Magnetic Semiconductors
Researchers use µSR to investigate Li(Zn,Mn)As, revealing its ferromagnetic ordering and critical spin dynamics. The study provides a new understanding of the material's magnetic ground state and phase evolution.
The University of Texas at Dallas is leading a new National Network for Microelectronics Education South Regional Node to build a workforce with the knowledge, skills and abilities that employers need. The initiative aims to address the growing demand for expertise in advanced manufacturing, particularly in technician positions.
Researchers have developed a single device that can harvest light and emit bright visible light, achieving high efficiency in both power conversion and electroluminescence. The device uses a novel organic semiconductor material with controlled energy flow, enabling it to operate at standard lithium-ion battery voltages.
A team of researchers from Okayama University directly observes the atomic-scale growth of ultra-thin semiconductor crystals using a microreactor. They identify multiple growth regimes and dynamics, shedding light on how crystal shape and quality depend on conditions.
Researchers at Kyoto University have developed a new method to strengthen the brightness of single-photon light sources using magnetism. By introducing defects into a two-dimensional semiconductor, they were able to enhance the emission intensity even under weak magnetic fields.
Researchers demonstrate a new strategy for magnetization reversal in multiferroic materials, allowing for more energy-efficient electronics. The study achieves this breakthrough by growing thin films in an unconventional crystallographic orientation, enabling the application of electric fields perpendicular to the film surface.
Scientists develop high-quality (Ga,Fe)Sb ferromagnetic semiconductor with a record-high Curie temperature of up to 530 K, exceeding previous limits and enabling stable operation at room temperature. The material exhibits excellent crystallinity and superior magnetic properties, making it suitable for spintronics applications.
Researchers from UC3M and Harvard University demonstrate reprogrammable mechanical behavior of magnetic metamaterials without changing composition. Flexible magnets allow for modification of stiffness and energy absorption capacity through distribution or external magnetic field manipulation.
Researchers developed a novel approach to maintain quantum characteristics in three-dimensional materials by exploiting the magnetic properties of chromium sulfide bromide. This method enables the preservation of excitons' unique optical properties and their ability to carry energy without charge, making it suitable for advanced optica...
Researchers have developed a new method for producing one class of 2D material and supercharging its magnetic properties. By applying liquid phase exfoliation and chemical treatment, they were able to increase the material's coercivity by five-fold, making it more suitable for applications such as spin filtering, electromagnetic shield...
Researchers at MIT have successfully fabricated fully 3D-printed resettable fuses, key components of active electronics that require semiconductors. The devices use a copper-doped polymer material to regulate resistance and can be used for basic control operations like motor speed regulation.
Researchers at Pohang University of Science & Technology (POSTECH) made a small change to develop highly efficient SOT materials. By creating an imbalance in the spin-Hall effect, they controlled magnetization switching without magnetic fields, achieving 2-130 times higher efficiency and lower power consumption than known single-layer ...
A team of researchers from the University of Barcelona has developed a new molecular compound that can be used as a magnetic surface coolant, which could lead to lower temperatures in electronic circuits or devices. The compound, composed of gadolinium ions, exhibits a magnetocaloric effect and high magnetic entropy.
Researchers at NCCR MARVEL found that EuCd2As2 behaves as a magnetic semiconductor with intermediate electrical conductivity, contrary to predictions of its Weyl semimetal properties. The study's use of optical spectroscopy highlights the importance of this technique in understanding material behavior.
A team of researchers has discovered a way to harness random telegraph noises in semiconductors, generating high-amplitude signals and manifesting inherent quantum states. By introducing vanadium into tungsten diselenide, they created a device that can switch between two stable states using voltage polarity.
A team at the University of Washington has made a breakthrough in quantum computing by detecting signatures of 'fractional quantum anomalous Hall' (FQAH) states in semiconductor materials. This discovery marks a significant step towards building stable qubits and potentially developing fault-tolerant quantum computers.
Researchers from the ARC Centre of Excellence in Exciton Science have demonstrated a new chip-scale approach using OLEDs to image magnetic fields, offering a potential solution for portable quantum sensing. This technique enables small, flexible, and mass-producible sensing without requiring input from a laser or cryogenic temperatures.
Researchers from the University of Manchester have discovered that graphene displays a remarkably strong response to magnetic fields, reaching above 100% in standard permanent magnets. This is a record magnetoresistivity among all known materials, attributed to the presence of Dirac fermions in high-mobility graphene.
The new technology enables compact, low-power, fast, and energy-efficient devices for fibre-optical communications, sensors, and future quantum computers. This breakthrough could lead to advancements in applications such as 3D imaging for autonomous vehicles and photonic-assisted computing.
Physicists have observed novel quantum effects in a topological insulator at room temperature, opening up new possibilities for efficient quantum technologies. This breakthrough uses bismuth-based topological materials to bypass the need for ultra-low temperatures.
Researchers at Columbia University have discovered a way to visualize magnons in a 2D material, CrSBr, by pairing them with excitons that emit light. This breakthrough enables the observation of tiny changes in magnon spins, potentially leading to the development of more efficient quantum information networks.
The study observes electric gate-controlled exchange-bias effect in van der Waals heterostructures, enabling scalable energy-efficient spin-orbit logic. The team successfully tunes the blocking temperature of the EB effect via an electric gate, allowing for the EB field to be turned 'ON' and 'OFF'.
Researchers have discovered layered 2D materials that can host unique magnetic features, including skyrmions, which remain stable at room temperature. The discovery could lead to novel low-energy data storage and information processing systems.
Researchers create a quantum anomalous Hall insulator by stacking a ferromagnetic material between two 2D topological insulators, enabling room-temperature lossless transport. The new architecture could lead to ultra-low energy future electronics or topological photovoltaics.
Researchers have demonstrated a novel semiconductor exhibiting an unconventional large anomalous Hall resistance in the absence of large-scale magnetic ordering. The findings validate a recent theoretical prediction and provide new insights into the phenomenon.
A research team at Toyohashi University of Technology demonstrates a new substrate structure that enables the excitation and detection of high-intensity broadband spin waves, even when miniaturized. The YIG-on-metal (YOM) structure achieves broader frequency bandwidth and higher intensity than conventional electrode structures.
Researchers discovered a new topological magnet that can induce a billion-fold change in resistance by rotating the magnetic field angle. This phenomenon, called colossal angular magnetoresistance, enables efficient detection of electronic spin states and opens up new opportunities for spin-electronic applications.
Researchers at the University of Pittsburgh are working on new soft magnetic materials and manufacturing processes to enable ultra-high frequency power electronics switching devices. The four-year project aims to establish a foundation for ultra-wide bandgap semiconductor materials in novel power electronics switching devices.
Northwestern University researchers developed new design principles for spin-based quantum materials that can enhance the efficiency of ultrafast, low-power electronics. The study identified key criteria for creating non-volatile, energy-efficient materials with long-lived persistent spin textures.
Researchers at Columbia University have developed a high-performance non-reciprocal device on a compact chip, achieving performance 25 times better than previous work. This breakthrough enables the creation of novel components such as circulators and isolators for two-way communication, doubling data capacity in wireless networks.
Researchers at Stevens Institute of Technology have developed an atomically thin magnetic semiconductor that enables faster processing speed, less energy consumption and increased storage capacity. The material works at room temperature and can be integrated with existing semiconductor technology.
Researchers at HZB have found a three-dimensional quantum spin liquid in the hyper-hyperkagome lattice of PbCuTe2O6. The discovery was made through both theoretical simulations and neutron experiments, which confirmed the predicted behavior.
Researchers at KIST have successfully controlled the magnetic properties of FGT, a material with potential for next-generation spintronic semiconductors. The discovery could accelerate the development of devices that operate 100 times faster than current silicon-based electronic devices.
Researchers at Penn State have developed a method to produce over 65,000 different types of nanoparticles, each containing up to six different materials. This breakthrough allows for the creation of complex particles with precise interfaces, opening up new possibilities for electrical and optical applications.
The research demonstrates a novel device structure that allows for unprecedented control over the angular orientation in twisted-layer devices. The team used graphene/boron-nitride heterostructures to show that the energy gap observed in graphene is tunable and can be turned on or off by changing the orientation between the layers.
Researchers developed a new magnetic material that can address both heat and short battery life issues in electronic devices. The device exhibits unidirectional current and significantly less dissipative power, paving the way for increased efficiency and longer battery life.
Researchers at Lobachevsky University have developed a new type of magnetic semiconductor layer that demonstrates spin-dependent phenomena at room temperature. The layers, fabricated using pulsed laser deposition, exhibit ferromagnetic properties and unique spin-split band structures.
Rice University researchers discovered a way to turn white graphene, an exceptional conductor of heat, into a wide-bandgap semiconductor with magnetic properties by adding fluorine. The magnetism is an unexpected bonus that could make the unique material suitable for electronics in extreme environments.
Heusler alloy NiMnSb exhibits spin-orbit torques, a phenomenon that enables magnets to flip themselves through internal electron motion. This effect could lead to improved magnetic random access memory architectures with low power consumption and scalability.
Researchers have synthesized micrometer length-scale carbon chains, surpassing previous records by more than one order of magnitude. The discovery confirms the existence of ultra-long linear carbon chains, also known as carbyne, using various advanced spectroscopic and microscopic techniques.
The IBS Center for Correlated Electron Systems has successfully created monolayer and multilayer samples of the magnetic Van der Waals material NiPS3. This achievement lays the foundation for the development of high-speed, low-energy consuming semiconductors that can be integrated into various devices.
Researchers have developed a new mathematical method to characterize non-uniform semiconductors with improved efficiency and precision. The method measures electrical conductivity in a single piece of material using a magnetic field, revealing variations across the entire sample.
Researchers have made an experimental breakthrough in understanding the Kondo Effect, a phenomenon affecting electrical resistance in materials. The discovery could lead to new technologies, including magnetic refrigeration and magnetocaloric properties, which could significantly reduce energy costs and carbon dioxide emissions.
Researchers at the University of Pittsburgh have discovered a novel oxide-based magnetism that follows electrical commands, paving the way for spin-based computing. This breakthrough could lead to ultrahigh density storage and computing architectures by combining magnetic materials with semiconductors.
Researchers have found ferromagnetic order with Tc up to 230 K in a new DMS system, overcoming the obstacle of lower Tc compared to classical systems. The system exhibits spontaneous magnetization and clear signatures of ferromagnetism, including negative magnetoresistance.
Research finds giant magnetoresistance effect is sensitive to semiconductor device size, which affects electron scattering and resistance change under magnetic field application. High-quality semiconductors show larger changes in resistance with smaller devices.
Researchers at North Carolina State University have created a new compound, strontium tin oxide (Sr3SnO), that can be integrated into silicon chips and exhibits dilute magnetic semiconductor properties. This material could enable the development of spin-based devices, or spintronics, which rely on magnetic forces to operate.
Researchers have discovered a new explanation for the strange behavior of the compound LaCoO3, which loses magnetism at lower temperatures but becomes magnetic as temperature rises. A rhombohedral distortion in its lattice structure is key to understanding this phenomenon.
Researchers have explored iron-doped zirconia, bridging the gap between theoretical predictions and experimental measurements. The study found that oxygen vacancies play a crucial role in providing its unique electronic and magnetic properties.
University of California researchers use hard X-ray angle-resolved photoemission spectroscopy to study gallium manganese arsenide, a material with potential in spintronics. The study reveals fundamental understanding of electronic interactions, suggesting future materials development.
Researchers used HARPES to investigate the bulk electronic structure of GaMnAs, finding evidence that two prevailing mechanisms co-exist to give rise to ferromagnetism. This breakthrough provides a better fundamental understanding of electronic interactions in dilute magnetic semiconductors.
Ohio State University researchers have discovered a way to amplify the spin-Seebeck effect, producing more electrical power in a non-magnetic semiconductor. The resulting voltages are tiny but promise a 1-million-fold increase in power, enabling low-cost and efficient solid-state engines that convert heat to electricity.
Researchers at the University of Science and Technology of China discovered that Mn-doped ZnS exhibits paramagnetic behavior due to isolated Mn ions in the lattice. This makes it unsuitable for use as a dilute magnetic semiconductor, contrary to previous hopes.
Researchers discover a material that can transform from nonmagnetic to magnetic at room temperature, enabling the creation of chameleon magnets. These materials have the potential to revolutionize computing by providing tunable and reprogrammable transistors.
Researchers Sang-Wook Cheong and Daniel Friedan receive American Physical Society prizes for their work on multiferroics and critical phenomena, respectively. Their discoveries have potential applications in semiconductor electronics, solar cells, and data storage.
Researchers observe complex electron patterns resembling fractals in a gallium arsenide semiconductor, revealing the transition point where it becomes magnetic. The findings suggest that magnetism arises from localized interactions within these fractal puddles.
Scientists have successfully trained tiny semiconductor crystals to display new magnetic functions at room temperature using light as a trigger. The breakthrough could enable the creation of materials that store information and perform logic functions simultaneously without the need for super cooling.
North Carolina State University scientists developed a GaMnN thin film-based device that manipulates both charge and spin of electrons at room temperature, surpassing previous devices which only functioned at -173°C. The new technology uses lower voltages to switch electron bias, improving semiconductor efficiency and speed.
Researchers at NPL developed magnetic semiconductors with superior performance, showing potential for electronic devices. The technology could revolutionize computing and be realized in 10 years, sustaining Moore's Law.
Researchers have demonstrated the existence of antiferromagnetic coupling in a specially built semiconductor device, which could enable magnetic data storage and processing. This discovery raises hopes for even smaller and faster gadgets that could utilize this property.