Articles tagged with Semiconductors
Researchers at Nagoya University have successfully developed a resonant tunnel diode that operates at room temperature using Group IV semiconductor materials. This breakthrough paves the way for terahertz wireless components that can deliver unprecedented speed and data handling capacity with superior energy efficiency.
The team of scientists has discovered a new process called chemical liquid deposition (CLD) that can create circuits invisible to the naked eye using B-EUV radiation. They have also found a way to deposit imidazole-based metal-organic resists from solution at silicon-wafer scale, controlling their thickness with nanometer precision.
A new GaN-based e-beam technology has been developed through joint research between Photo electron Soul and Nagoya University, enabling non-contact electrical inspection and metrology during semiconductor manufacturing. The technology is expected to improve yield and defect detection, leading to increased efficiency in the industry.
Researchers at Nagoya University have developed a new method to create gallium oxide semiconductors with stable p-type layers, allowing for twice the current capacity of previous devices. This breakthrough enables improved energy efficiency, reduced waste, and lower operating costs for electronics.
Researchers developed a new model and theory to explain nanoparticle growth dynamics, accounting for six essential characteristics of nanoparticle growth. The new theory provides fresh physical insights into the role of nanoparticle motion and configurational degeneracy on their nucleation and growth.
Researchers at Tohoku University developed a new crystal growth technology using tungsten that can produce high-density single crystals above 2,200°C. This breakthrough enables the creation of new materials for semiconductors, optical devices, and scintillators, with potential applications in cancer detection and other fields.
ConcreteSC technology achieves significant speed boosts and improved efficiency in next-generation wireless networks. The innovation integrates user tasks into communication processes, reducing computational complexity and increasing semantic meaning.
The team's two-step high-temperature hydrogen annealing process improves both performance and reliability, effectively removing defects and expanding the operational voltage range.
A team of materials scientists at Rice University developed a new way to grow ultrathin semiconductors directly onto electronic components using chemical vapor deposition. The breakthrough technique eliminates the fragile manufacturing step, potentially speeding up development of next-generation electronics and computing.
Researchers at Yonsei University have successfully measured the full quantum metric tensors of Bloch electrons in solids, a breakthrough that could lead to advanced semiconductor technologies and higher transition-temperature superconductors. The study used black phosphorus as a representative material for photoemission measurements.
Researchers at Peking University have successfully fabricated large-area crystalline InSe wafers for integrated electronics, demonstrating exceptional electronic performance and ultra-high electron mobility. The devices exhibit outstanding behavior at sub-10 nm gate lengths, surpassing silicon projections in key future benchmarks.
Researchers at Kyoto University have developed a new method to strengthen the brightness of single-photon light sources using magnetism. By introducing defects into a two-dimensional semiconductor, they were able to enhance the emission intensity even under weak magnetic fields.
Researchers at MIT develop a new method to directly measure the strength of electron-phonon interaction in semiconductors, a crucial property for next-generation microelectronic devices and quantum computers. This approach leverages an oft-overlooked interference effect in neutron scattering to detect electron-phonon interactions.
The program aims to develop reliable, high-performance power electronic devices using wide and ultrawide bandgap semiconductors. Researchers will design and fabricate key components such as high-electron-mobility transistors and broadband high-efficiency power amplifiers.
Researchers from The University of Osaka develop a new program to calculate the spin accumulation coefficient, providing a definitive measure of the spin Hall effect and overcoming ambiguities. This advancement enables accurate predictions for real materials, accelerating the development of advanced spintronic technologies.
Researchers at Pusan National University developed a new Bayesian calibration framework to optimize digital twin models of automated material handling systems. The framework improves prediction accuracy by accounting for parameter uncertainty and discrepancy, enabling effective calibration with scarce field data.
The Idaho National Laboratory will lead the Semiconductor Manufacturing and Advanced Research with Twins USA Institute (SMART USA) in advancing American digital twin technology. Leveraging high-performance computing, digital engineering, artificial intelligence, and advanced manufacturing, SMART USA aims to reboot domestic manufacturin...
Researchers successfully confirmed long-standing 'electron tunneling' phenomenon, revealing surprising interactions between electrons and atomic nuclei during tunneling. The study's findings have significant implications for advanced technologies like semiconductors, quantum computers, and ultrafast lasers.
Researchers have developed a new material, CSiGeSn, that combines the stability of silicon with tunable optical properties. This allows for the creation of components beyond pure silicon capabilities, such as optical and quantum circuits.
A novel metal-assisted van der Waals epitaxy technique successfully fabricates wafer-scale monolayer MoS2 films and achieves precise substitutional doping with transition metals. The research team demonstrates exceptional electrical properties, including high electron mobility and ultra-low power consumption.
Researchers have developed a new way to precisely tune magnetism using ultra-thin CrPS₄ material. This breakthrough could solve long-standing scientific problems and pave the way for smarter magnetic technologies.
A new palladium-loaded a-IGZO catalyst achieved over 91% selectivity when converting CO2 to methanol, leveraging electronic properties of semiconductors. The study demonstrates novel design principles for sustainable catalysis based on electronic structure engineering.
Researchers from Institute of Science Tokyo have developed (Al,Ga,Sc)N thin films with record-high scandium levels, enabling efficient data storage and reducing power consumption. The films also show promise for noise filters and optical computing applications.
The article discusses the use of solution-processed 2D materials to fabricate memristors, offering a scalable alternative to traditional methods. Recent breakthroughs have overcome manufacturing limitations, producing larger and less-damaged nanosheets with improved device performance.
Researchers from The University of Osaka developed a technique to recover magnetization in degraded spintronics devices using molecular hydrogen and Pt underlayers. This method can improve the robustness of semiconductor memory.
Researchers introduced hydrogen into high-quality Ge thin films, reducing hole density by three orders of magnitude. Low-temperature annealing repaired surface defects, further improving device performance and applicability.
Researchers at Chalmers University of Technology have developed a highly efficient amplifier that activates only when reading information from qubits. The amplifier consumes just one-tenth of the power consumed by the best amplifiers available today, reducing qubit decoherence and laying the foundation for more powerful quantum computers.
Researchers developed key technologies for precise and high-speed bonding and adhesive technology to address demands of high-performance computing applications. They successfully integrated chips onto a 300 mm waffle wafer, achieving enhanced bonding speed without chip-detachment failures.
Researchers at the University of Tokyo have developed a new transistor design using gallium-doped indium oxide, achieving high mobility and reliable performance. The gate-all-around structure enhances efficiency and scalability, making it suitable for big data and AI applications.
Researchers developed a novel method to analyze energy losses in soft magnetic materials, using diamond quantum sensors and protocols for kHz and MHz frequencies. The study reveals near-zero phase delay up to 2.3 MHz in high-frequency inductors, indicating negligible energy losses.
Scientists develop high-quality (Ga,Fe)Sb ferromagnetic semiconductor with a record-high Curie temperature of up to 530 K, exceeding previous limits and enabling stable operation at room temperature. The material exhibits excellent crystallinity and superior magnetic properties, making it suitable for spintronics applications.
Researchers at Tohoku University have achieved the world's lowest write power of 156 fJ in 75° canted SOT devices, reducing write power by 35% compared to current technologies. The breakthrough demonstrates high-speed and field-free writing capabilities for SOT-MRAM.
Researchers at University of Chicago Pritzker School of Molecular Engineering discovered one of the world's thinnest semiconductor junctions within a quantum material. The discovery could lead to ultra-miniaturized electronic components and provides insight into electron behavior in materials designed for quantum applications.
Researchers have successfully produced eco-friendly solar hydrogen for the first time using a quantum semiconductor nanocluster, consisting of 26 atoms. The breakthrough could expand into various possibilities in energy, environment, and quantum science.
Researchers at U of A create a transistor that operates at speeds over 1,000 times faster than modern computer chips. The breakthrough uses quantum effects to manipulate electrons in graphene, enabling ultrafast processing for applications in space research, chemistry, and healthcare.
The University of Michigan researchers discovered a simple annealing method that enhances the quality of materials used in cell phones, sensors and energy harvesting devices. The process boosts piezoelectricity eight times beyond current technology.
Researchers developed a technology to produce high-quality p-type transistors using vapor-deposited tin-based perovskites, achieving high mobility and low power consumption. The innovation enables large-area device arrays and reduces manufacturing costs.
Fraunhofer IAF presents a bidirectional 1200 V GaN switch with integrated free-wheeling diodes, enabling more efficient power electronics for energy generation and mobility. The switch can be used in grid-connected power converters and electric drive systems.
A team of researchers at POSTECH has identified a hidden mechanism in Electrochemical Random-Access Memory (ECRAM) technology, enabling faster and more efficient AI computations. This breakthrough could lead to significant improvements in data processing and reduced energy consumption.
SiC-based pressure sensors offer promising solutions for extreme environments due to their wide bandgap, high carrier saturation drift rate, and strong chemical stability. The review highlights key technologies, including epitaxial layers, piezoresistive effect, ohmic contacts, etching, and sensor packaging.
Researchers at MIT have developed a new method to fabricate stretchable ceramics, glass, and metals using a double-network design. This material can stretch over four times its size without breaking, making it suitable for tear-resistant textiles and flexible semiconductors.
MIT engineers developed ultrathin electronic films that sense heat and other signals, reducing the bulk of conventional goggles and scopes. The new pyroelectric thin film is highly sensitive to heat and radiation across the far-infrared spectrum, enabling lighter, more portable night-vision eyewear.
Researchers at the University of Michigan have discovered a mechanism that holds new ferroelectric semiconductors together, enabling high power transistors and sensors. The team found an atomic-scale break in the material that creates a conductive pathway, allowing for adjustable superhighways for electricity.
A new hardware platform for AI accelerators capable of handling significant workloads with reduced energy requirement has been developed. The platform leverages III-V compound semiconductors to create photonic integrated circuits, which operate at the speed of light with minimal energy loss.
New research validates theoretical models on how nanoscopic ripples affect material properties, leading to a better understanding of their mechanical behavior. The study's findings have significant implications for the development of microelectronics and other technologies that rely on thin films.
A novel AI framework, MULGONET, improves cancer recurrence prediction by integrating genomic, epigenetic and transcriptomic data. The model overcomes limitations of traditional machine learning models by automatically linking genes to biological processes, enabling trans-cancer applicability.
A new THz metasurface device can continuously manipulate polarization states on different output planes over a relatively long propagation distance. It achieves this by decomposing incident polarized THz waves into two orthogonal circularly polarized components, which then recombine to produce linearly polarized waves.
Researchers have developed a novel semiconductor material that significantly improves the efficiency of photocatalytic water splitting by eliminating charge recombination and facilitating efficient charge separation. The Sc-doped TiO2 semiconductor achieves a record-breaking quantum yield of 30.3% and a solar-to-hydrogen efficiency of ...
Researchers at Texas Tech University are developing semiconductor power devices using wide and ultra-wide bandgap semiconductors. The goal is to create highly reliable, high-performance electronic devices for high-power electronics, electronic warfare, surveillance, and other military applications.
Researchers periodically drove a time crystal and observed a range of nonlinear dynamic behaviors, from perfect synchronization to chaotic motion. The team discovered the 'Farey tree sequence' and the 'devil's staircase,' which indicate specific patterns of behavior in response to periodic driving.
Researchers developed a compact, solid-state laser system that generates 193-nm coherent light, marking the first 193-nm vortex beam produced from a solid-state laser. This innovation enhances semiconductor lithography efficiency and opens new avenues for advanced manufacturing techniques.
Researchers have developed a chiral semiconductor that emits circularly polarised light, potentially improving OLED display efficiency and enabling quantum computing. The innovation uses molecular design tricks inspired by nature to create ordered spiral columns of semiconducting molecules.
Perovskite LEDs have shown great potential for commercialization due to their lower costs and environmental impact. However, longevity remains a significant issue that needs to reach around 10,000 hours for a positive environmental impact.
Irresistible Materials Ltd appoints new CEO to lead business strategy and commercial engagements for its Extreme Ultra Violet (EUV) photoresist platform. The company's MTR technology is expected to grow the global EUV photoresist market at a substantial compound annual growth rate of over 20%.
The Florida Semiconductor Summit analyzed the state's foothold in semiconductor production, highlighting its momentum and opportunities. The summit addressed the growing demand for chips in space and defense, as well as the need to bridge the workforce gap with education and engagement initiatives.
Researchers developed a new growth method leveraging 2D materials as templates to enable the synthesis of perfectly single-crystal TMD films on any substrate. The 'Hypotaxy' technique holds significant industrial potential, allowing for low-temperature growth and precise control over film thickness.
Researchers have discovered that quantum materials can be used to sense the biological electrical activity of living cells with high speed and resolution. The technology uses light to track changes in the material's photoluminescence, mapping the electrical activity of heart muscle cells in real time.
A multi-institutional research team from Osaka University has discovered the origin of extremely bright color centers at an oxide/semiconductor interface. The study reveals a correlation between the luminescence of color centers and the density of electron traps, suggesting a specific carbon-related defect as the most promising candidate.
Researchers at HZB have produced mesoporous silicon layers with tiny pores, revealing the electronic transport mechanism. The material has great potential for applications, including thermally insulating qubits for quantum computers. Disorder plays a key role in understanding charge transport.
University of Michigan researchers will scale up NASA's technology and manufacturing process to create durable silicon carbide circuits that can operate at record-high temperatures. The project aims to advance aerospace electronics and sensors for aircraft engines, and support renewable energy and defense applications.