Articles tagged with Silicon Carbides
Researchers at Kyoto University have developed a new SiC transistor structure that can operate at 600°C, scaling up production to wafer-level for high-temp applications. The team's achievement enables the fabrication of integrated circuits, opening doors to new areas like jet engine sensors and geothermal resource development.
The new method uses a chemical additive to create a sacrificial molecular cushion on the crystal surface, allowing for smoother cutting and reducing defects. This technique slashes subsurface crystal defects to a depth of only 70 nanometers, promising to revolutionize semiconductor manufacturing.
Researchers at Kyoto University have developed a transistor that can operate at 600°C, leveraging the intrinsic properties of SiC to improve controllability and reduce leakage currents. The bottom-gate design significantly enhances the device's performance, paving the way for practical use in extreme-temperature electronics.
Professor Owen Guy has received the SEMI Academia Impact Award for his outstanding contributions to semiconductor research, innovation, and industry-academia collaboration in Europe. He is Director of Swansea University's Centre for Nanohealth and a member of its Centre for Integrative Semiconductor Materials.
The team successfully tested a hybrid Cessna 337 plane with a smaller, more efficient silicon carbide-based motor drive system. The technology reduces the overall size and weight of the plane, making it ideal for small aircraft where space is limited.
The team's two-step high-temperature hydrogen annealing process improves both performance and reliability, effectively removing defects and expanding the operational voltage range.
Researchers developed a new 3D printing method that creates strong, high-quality silicon carbide (SiC) ceramic parts at lower temperatures. The method uses vat-polymerization and adds silica to improve material quality, resulting in comparable strength to ceramics sintered at higher temperatures.
SiC-based pressure sensors offer promising solutions for extreme environments due to their wide bandgap, high carrier saturation drift rate, and strong chemical stability. The review highlights key technologies, including epitaxial layers, piezoresistive effect, ohmic contacts, etching, and sensor packaging.
Dr Florian Kaiser leads €3 million ERC Consolidator Grant-funded research on quantum integration, aiming to create practical applications and overcome scalability challenges in quantum technologies. The goal is to integrate quantum processors and memories on a single chip, enabling superior performance and minimal energy consumption.
The paper reviews thermal design of SiC power modules for motor drives in electric vehicles, focusing on optimizing irregular Pinfin structures and collaborative design with DC bus capacitors and motors. Irregular Pinfin arrangements can enhance heat transfer efficiency and reduce pressure drops compared to regular layouts.
Scientists from Penn created a non-volatile memory device using ferroelectric aluminum scandium nitride (AlScN) to retain data at high temperatures. The device's stability and fast switching properties enable efficient computation in harsh conditions, including space exploration and deep-earth drilling.
Scientists at Linköping University have created sheets of gold only a single atom layer thick, termed goldene. This material has given gold new properties that can make it suitable for applications such as carbon dioxide conversion, hydrogen production, and selective production of value-added chemicals.
Researchers introduce new method to store data for generations using atomic-scale defects, exceeding current storage limits and energy consumption. The approach features 4D encoding schemes and can be applied to other materials with optically active defects.
Researchers have created an ultrablack thin-film coating that absorbs nearly all visible light, enhancing the performance of advanced telescopes and optical systems. The coating, developed using atomic layer deposition, is durable enough to withstand harsh conditions and has been applied to magnesium alloys used in aerospace applications.
Rice University researchers have developed a new, energy-efficient process to upcycle glass fiber-reinforced plastic (GFRP) into silicon carbide, widely used in semiconductors and sandpaper. The method involves heating the mixture of GFRP and carbon to extremely high temperatures, transforming it into conductive silicon carbide.
A team of researchers led by Walter de Heer at Georgia Institute of Technology has created a functional graphene semiconductor with 10 times the mobility of silicon. This breakthrough technology could enable smaller and faster devices, as well as applications for quantum computing.
Researchers at Osaka Metropolitan University fabricated GaN transistors using diamond substrates, achieving more than twice the heat dissipation of SiC-based transistors. This novel technology has the potential to revolutionize power and radio frequency electronics with improved thermal management capabilities.
A new study uses computer simulations to predict the formation process of spin defects in silicon carbide, an attractive host material for spin qubits. The team's findings represent an important step towards identifying fabrication parameters for spin defects useful for quantum technologies.
Researchers from USTC enhance fluorescence brightness of single silicon carbide spin color centers by leveraging surface plasmons, achieving a seven-fold enhancement and one million counts per second with an oil lens. This low-cost method allows precise manipulation of distance and improves efficiency of spin control.
Scientists from Nagoya Institute of Technology have discovered that Auger recombination rate decreases with increasing excited carrier concentration under high injection conditions. This finding has significant implications for optimizing SiC bipolar device efficiency and development of next-generation high-power devices.
Georgia Tech researchers developed a new nanoelectronics platform based on graphene, enabling smaller devices, higher speeds, and less heat. The platform may lead to the discovery of a new quasiparticle, potentially exploiting the elusive Majorana fermion.
Researchers at the University of Illinois have solved a long-standing puzzle about cubic silicon carbide's thermal conductivity, which is higher than previously thought. The team measured an isotropic high thermal conductivity of over 500 W m–1 K–1, ranking it second only to diamond.
Researchers from Nagoya Institute of Technology found a feasible solution to prevent bipolar degradation in 4H-SiC semiconductor wafers using proton implantation. The technique pinches down partial dislocations in the crystal structure, preventing stacking faults and enhancing device reliability.
Researchers from Griffith University and UNSW Sydney developed a robust and functional material system that overcomes the challenges of long-term implantation in biofluids. The system consists of silicon carbide nanomembranes as the contact surface and silicon dioxide as the protective encapsulation, showing unrivalled stability.
Researchers use machine learning to automatically analyze Reflection High-Energy Electron Diffraction (RHEED) data, enabling faster and more efficient discovery of new materials. The study focused on surface superstructures in thin-film silicon surfaces and identified optimal synthesis conditions using non-negative matrix factorization.
Researchers from the University of Arizona suggest that dying stars can forge carbon nanotubes in the envelopes of dust and gas surrounding them. This process involves the spontaneous formation of carbon nanotubes, which are highly structured rod-like molecules consisting of multiple layers of carbon sheets.
Researchers have discovered an elegant equation to approximate the coherence time of materials hosting spin qubits. The team can now estimate coherence times in seconds using just five material properties, facilitating a rapid exploration of new candidate materials.
Scientists at Vienna University of Technology have successfully integrated large surface areas of graphene into limited volumes by producing it on complex branched nanostructures. This breakthrough enables increased storage capacity for hydrogen and higher sensitivity in chemical sensors.
A novel carbon-based biosensor developed at the University of Technology Sydney detects electrical signals sent by the brain, translating them into commands for autonomous robotic systems. The biosensor overcomes three major challenges in graphene-based biosensing: corrosion, durability, and skin-contact resistance.
Scientists have made a breakthrough in controlling the formation of vacancies in silicon carbide, a semiconductor material. The team's simulations tracked the pairing of individual vacancies into a divacancy and discovered the optimal temperatures for creating stable divacancies. This discovery could lead to highly sensitive sensors an...
A new study analyzes presolar grains in meteorites to determine their stellar origins, using improved spatial resolution and isotopic analysis techniques. The research finds that the N isotope ratios of certain grains link them to different types of carbon stars, providing insights into the history of the universe.
Researchers developed a sensitive new way to detect and count transistor defects, which limit performance and reliability. The method works with traditional Si and SiC materials, identifying defect type and number with simple DC measurement.
Scientists have created a high-spin divacancy color center in silicon carbide with exceptional optical and spin properties. This achievement enables the development of room-temperature solid-state quantum storage and scalable quantum networks based on SiC spin color centers.
Researchers from USTC created a divacancy color center array and achieved spin-coherent manipulation of a single divacancy color center at room temperature. The spin color centers showed excellent properties comparable to the diamond NV center, with a 30% spin readout contrast and extended coherence time of up to 23 microseconds.
Researchers at NUST MISIS create affordable heat sinks by mixing rubbers with silicon carbide, significantly reducing production costs. The new material can withstand temperatures up to 300°C and has potential applications in industry and electronics.
A study published in IEEE Transactions on Power Electronics detects the earliest stages of failure in silicon carbide power electronics through real-time acoustic monitoring. The researchers found that increasing acoustic emission signals correspond to progressive damage to aluminum ribbons, allowing for early warning of device failure.
Scientists at Linköping University develop a graphene-based photoelectrode that converts carbon dioxide to methane, carbon monoxide, or formic acid using solar energy. The technique could contribute to renewable energy development and reduce fossil fuel combustion's environmental impact.
A new study by University of Wisconsin-Madison researchers reveals that silicon carbide's grain boundaries are susceptible to radiation-induced segregation, affecting the material's chemistry. This discovery could aid in fine-tuning ceramic materials for high-tech applications like nuclear energy and jet engines.
Researchers at Texas A¸M University have formulated a new recipe to prevent weaknesses in modern-day armor. By adding a tiny amount of silicon to boron carbide, they discovered that bullet-resistant gear could be made substantially more resilient to high-speed impacts.
Scientists at Linköping University and SweGaN have developed a new method to fit together layers of semiconductors, resulting in high-breakdown thin GaN transistors. The transistors can withstand high voltages due to the gradual absorption of strain between layers.
A team of researchers from the University of Arizona has discovered a mechanism creating complex carbon molecules, such as C60, in a simulated planetary nebula environment. The study suggests that these molecules are derived from silicon carbide dust made by dying stars and can be dispersed throughout the interstellar medium.
Researchers at Cornell University have made a groundbreaking discovery in gallium nitride, which could transform electronics and wireless communication. The new material structure creates a high-density of mobile holes, making GaN structures almost 10 times more conductive than traditional doping methods.
Researchers found that defects at the interface between silicon carbide and silicon dioxide can compromise its efficiency. However, altering oxidation parameters can reduce these defects, potentially leading to improved performance. This discovery could contribute to more effective use of electrical power.
Researchers developed a new model to study complex defects in silicon carbide crystals, explaining their characteristics on an atomic scale. The work provides a qualitative understanding of the impact of edge dislocations on material properties.
The project aims to reduce cost, weight, and volume of systems powering hybrid and plug-in electric vehicles while improving performance, efficiency, and reliability. Researchers will design silicon-carbide integrated circuits for power modules and develop methods for packaging and integrating these circuits with other components.
Researchers developed porous composites based on SiC/AIN with up to 40% aluminum nitride, exceeding traditional materials due to solid solution formation at grain boundaries. These composites improve thermal conductivity, heat resistance, and low coefficient of thermal expansion.
Researchers at Linköping University have developed a method to produce graphene with several layers in a controlled process, enabling the conversion of carbon dioxide and water into renewable fuel. The graphene also exhibits superconducting properties when arranged in a special way.
A team of physicists has identified a way to create quantum bits in silicon carbide crystals, emitting photons at wavelengths near those used in data transmission. This breakthrough enables the potential for quantum communication through standard optical fibers, paving the way for superior computing powers and unbreakable cryptography.
Researchers developed a new production method for titanium carbide MXene by selectively etching silicon from titanium silicon carbide, resulting in flakes with unique properties. The process uses mixtures of hydrofluoric acid and an oxidizing agent to weaken silicon bonds and facilitate synthesis.
Researchers discover silicon carbide as a promising material for single-photon emission, enabling high-speed quantum internet. This breakthrough could guarantee unconditionally secure data communication lines forever.
Researchers at TU Wien have developed a method to manufacture porous silicon carbide structures with controlled porosity, opening up new possibilities for sensor technology, optical components, and biological applications. The technique allows for the creation of micro- and nanostructures with unique properties.
A team of researchers has discovered a way to manipulate a weird quantum interface between light and matter in silicon carbide, advancing the possibility of applying quantum mechanical principles to existing optical fiber networks. They achieved a record-breaking 10,000 photons before destroying the spin state, paving the way for secur...
A Stanford team has made significant advancements in developing new materials for quantum computing, enabling the creation of practical systems. By harnessing light and electron interactions, they have created structures that can trap spinning electrons, a crucial step towards making quantum computing a reality.
Engineers at MIT have created a method to iron out wrinkles in graphene, producing uniform performance and increasing its electrical conductivity. The technique enables the mass production of single-domain graphene wafer-scale, paving the way for faster electronic devices.
The new composite fibers, developed in collaboration with NASA, have strong interlocking connections that make them less prone to cracking and seal the material to prevent oxygen from changing its chemical composition. The fibers are also resistant to high temperatures and can make entire turbo engines significantly lighter.
Researchers at North Carolina State University have developed a high-voltage and high-frequency silicon carbide power switch that is cost-effective and efficient. The FREEDM Super-Cascode switch can operate over a wide range of temperatures and frequencies, making it suitable for applications in medium- and high-voltage power devices.
UCLA researchers have developed a super-strong yet light structural metal by infusing magnesium with dense silicon carbide nanoparticles, achieving record levels of specific strength and stiffness-to-weight ratio. The new metal has potential applications in airplanes, cars, mobile electronics, and biomedical devices.
Research from Griffith University demonstrates silicon carbide's superiority as a semiconductor for high-performance sensors in various industries, including mining and aerospace. The compound's unique electronic structure provides mechanical strength, chemical inertness, thermal durability, and electrical stability.
The graphene-paved roadmap outlines the material's potential for transforming various industries, including electronics and medicine. With its unique properties, graphene is expected to play a crucial role in developing new technologies such as flexible devices, rollable e-paper, and high-speed wireless communications.
Researchers are developing silicon carbide microchips that can operate in harsh environments, enabling new applications like efficient lighting. The project aims to bring this technology closer to reality and engage with major international industry.