Articles tagged with Ferroelectricity
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Researchers at the University of Arkansas have developed a lead-free alternative to essential electronics component ferroelectric materials. By applying mechanical strain, they enhanced lead-free ferroelectrics, opening possibilities for devices and sensors implanted in humans.
Researchers have discovered a new polar order in a hybrid crystal, ferrielectricity, which enables electric control of spin-orbit coupling and circular photogalvanic effect. The material's switchable net polarization, asynchronous switching, and field-driven polar-to-polar transition demonstrate its unique properties.
Researchers from Queen Mary University of London have discovered a new way to engineer thin films that can adapt quickly to changing signals, making them highly responsive and efficient. The new material shows an unusually high level of tunability, reaching about 74% at microwave frequencies, with low voltage application required.
Researchers have developed a new type of light-controlled non-volatile memory, leveraging circularly polarized terahertz light pulses to switch between two stable states. This breakthrough offers promising candidates for stable and robust data storage.
Researchers have developed a novel way for liquid crystals to retain information about their movement, enabling the creation of smart and flexible materials. The breakthrough could lead to advancements in memory devices, sensors, and new types of physics.
Researchers developed a novel neuron-like interface material and bioelectronic platform that enables seamless integration and adaptive communication with neural systems. The platform, termed ferroelectric bioelectronics (FerroE), integrates neuron-like flexibility, surface topography, and functional behaviors into a single system.
Case Western Reserve University researchers have developed an environmentally safer type of plastic that can be used for wearable electronics, sensors, and other electrical applications without fluorine. The new material exhibits tunable ferroelectricity and flexibility, making it suitable for various electronic uses.
Researchers achieved direct measurement of nanometer-scale charge distributions formed at ferroelectric domain interfaces using electron microscopy. This study contributes to a deeper understanding of ferroelectric devices and their performance improvement.
Empa researchers have developed a novel deposition process for piezoelectric thin films using HiPIMS, producing high-quality layers on insulating substrates at low temperatures. The technique overcomes the challenge of argon inclusions by timing the voltage application to accelerate desired ions.
Researchers at the University of Michigan have discovered a mechanism that holds new ferroelectric semiconductors together, enabling high power transistors and sensors. The team found an atomic-scale break in the material that creates a conductive pathway, allowing for adjustable superhighways for electricity.
The study reveals that relaxor ferroelectrics like lead magnesium niobate-lead titanate (PMN-PT) exhibit improved performance when shrunk down to a precise range of 25-30 nanometers. This 'Goldilocks zone' size effect could enable advanced applications such as nanoelectromechanical systems and energy harvesting.
Dr. Ted Moise, UT Dallas professor and director of the North Texas Semiconductor Institute, has been honored as a National Academy of Inventors Fellow for his groundbreaking work on ferroelectric random-access memory (FRAM). This technology enables faster data storage while using less power, with applications in ultra-low power microco...
Scientists have developed a new method for converting crystal to glass using electric current, reducing the need for high-power melt-quench processes. The discovery could transform data storage in devices and unlock wider applications for phase-change memory technology.
Researchers have discovered a new connection between the nanoscale features of a piezoelectric material and its macroscopic properties, providing a new approach to designing smaller electromechanical devices. The mesoscale structures reveal a complex tile-like pattern that aligns dipoles in a specific way under an electric field.
Researchers at Argonne National Laboratory have made significant strides in understanding the mesoscale properties of a ferroelectric material under an electric field. The breakthrough holds potential for advances in computer memory, lasers, and sensors.
Researchers developed a novel nanoporous material with exceptional piezoelectric capabilities, outperforming traditional lead-based materials. The material's ultra-thin structure and straightforward synthesis approach make it a highly promising candidate for future high-density energy harvesting.
Researchers have identified a class of materials called antiferroelectrics that produce an electromechanical response up to five times greater than conventional piezoelectric materials, even in films as thin as 100 nanometers. This breakthrough could enable the development of next-generation electronics and devices.
Researchers have discovered a new state of matter characterized by chiral currents, generated by cooperative electron movement. This phenomenon has implications for the development of new electronic devices and technologies, including optoelectronics and quantum technologies.
A team of researchers has identified the intrinsic interactions responsible for light-induced ferroelectricity in SrTiO3. By measuring fluctuations in atomic positions, they found that mid-infrared excitation suppresses certain lattice vibrations, leading to a more ordered dipolar structure.
Researchers outline new method to stabilize bulk hafnia in metastable ferroelectric and antiferroelectric states, paving the way for non-volatile memory technology. The approach requires less yttrium, improving material quality and purity.
Researchers have developed a new technique to understand the relationship between atomic structure and electric polarization in 2D van der Waals ferroelectric materials. This discovery is expected to revolutionize domain engineering in these materials, positioning them as fundamental building blocks for advanced devices.
Scientists have discovered how atoms and spins move together in electromagnons, a hybrid excitation that can be controlled with light. The study used time-resolved X-ray diffraction to reveal the atomic motions and spin movements, showing that atoms move first and then the spins fractionally later.
The interdisciplinary team, led by Kaiyuan Yang, will focus on leveraging the spin and charge of electrons in multiferroics to process and store information. The goal is to improve energy efficiency for computing devices, potentially reducing energy consumption by three orders of magnitude.
A recent study presents an exciting new way to measure the crackling noise of atoms in crystals, enabling the investigation of novel materials for future electronics. The method allows researchers to study individual nanoscale features and identify their effects on material properties.
Researchers developed a precise crosslinking method to impart elastic recovery to ferroelectric materials. The new material combines elasticity with high crystallinity, offering broad application prospects in wearable electronics and smart healthcare.
Researchers at Carnegie Mellon University and Penn State University have discovered novel ferroelectric materials that can switch at the atomic level, enabling more efficient microelectronics. The findings hold promise for applications such as non-volatile memory, electro-optics, and energy harvesting.
Researchers at Tokyo Institute of Technology developed a simple sol-gel method to synthesize highly pure bifunctional solid acid-base catalysts with desirable properties. The new method produces SrTiO3 nanoparticles with high surface area, showing 10 times higher catalytic activity than commercially available titanates.
Researchers discovered a property in single-layer ferroelectric materials that allows them to bend in response to an electrical stimulus. This bending behavior enables the creation of nano-scale switches or motors, which can be controlled using electrical signals.
Scientists from NC State University have discovered a way to manipulate the flow of heat through ferroelectric materials by applying different electric fields. The study, published in Advanced Materials, found that varying electric field strengths, types (AC/DC), time, and frequency can alter the thermal properties of these materials.
Researchers discovered a size threshold beyond which antiferroelectric materials become ferroelectric, losing energy storage advantages. At thicknesses below 40 nm, the material becomes completely ferroelectric, while above 270 nm, ferroelectric regions appear.
Researchers find quasiparticles called ferrons that carry waves of polarization and heat in ferroelectric materials. The ferron's behavior is sensitive to an external electric field, turning the material into a thermal switch.
Researchers confirmed cupric oxide's multiferroic state at room temperature under high pressure using neutron diffraction. Thin films of precisely distorted crystals may exhibit such properties at ambient pressure. This discovery enables the development of next-generation memory devices and energy-efficient optical modulators.
Charged porphyrins enable researchers to study π-electronic ion pairs and their interactions, leading to the creation of electronic materials with unique properties. The study reveals fascinating new properties of stacked ion pairs and their potential applications in fields like nanomagnetism and ferroelectrics.
Researchers review emerging field of 2D ferroelectric materials with layered van-der-Waals crystal structures, offering new properties and functionalities not found in conventional materials. These materials show easily stackable nature, making them attractive as building blocks for post-Moore's law electronics.
Researchers at the University of Virginia have developed a new material system that allows for the co-location of computation and memory on a single chip. This breakthrough could help flatten the energy demand curve for computing and reduce the strain on power grids.
The new computer chip uses a transistor-free design that eliminates data transfer time and minimizes energy consumption. It offers up to 100 times faster performance than conventional computing architectures, making it ideal for AI applications.
Researchers at Rensselaer Polytechnic Institute have successfully controlled electron spin at room temperature, a crucial step towards developing more efficient and faster devices. The discovery uses a unique ferroelectric van der Waals layered perovskite crystal to harness the Rashba or Dresselhaus spin-orbit coupling effect.
Lithium niobate photonics has developed rapidly, enabling compact devices with high performance. Thin film lithium niobate (TFLN) structures have shown significant improvements in refractive index contrast, paving the way for more integrated photonic devices.
FeRh, a metal with antiferromagnetic and ferromagnetic phases, has its phase transition kinetics measured using ultrafast techniques. The study reveals new insights into the ultrafast dynamics of magnetic materials.
Researchers have observed persistent swinging of electrons between atomic sites in crystals using ultrafast X-ray diffraction. The study reveals relocation of valence charge on the length scale of interatomic distances, paving the way for future studies of functional materials.
A novel ferroelectric tunnel junction (FTJ) synapse based on Ag/PbZr0.52Ti0.48O3(PZT, (111)-oriented)/Nb:SrTiO3 demonstrated 256 conductance states with satisfactory linearity and stability. The ON/OFF ratio was as high as 200, and an endurance of up to 10^9 cycles was achieved.
Researchers at MIT have discovered a monolayer multiferroic material that can be stacked to induce interesting properties. This finding could lead to the development of smaller, faster, and more efficient data-storage devices.
University of Warwick physicists have discovered a complex electrical 'vortex' pattern in ferroelectric materials that mirrors the spin crystal phase of ferromagnets. This finding suggests that ferroelectricity and magnetism could be two sides of the same coin, with potential implications for new electronic technologies.
The discovery of electroferrofluids with nonequilibrium voltage-controlled magnetism has the potential to control pattern formation and structures, providing valuable insights into dissipative systems. This system can be used to study transition into dissipative systems and understand how external influences interact with the system.
Researchers have discovered that negative capacitance in topological transistors can switch at lower voltage, potentially reducing energy losses. This new design could help alleviate the unsustainable energy load of computing, which consumes about 8% of global electricity supply.
Scientists at Argonne National Laboratory have discovered a method to remove heterostructure thin films containing electrical bubbles from a substrate while keeping them fully intact. This breakthrough may bring new applications in microelectronics and energy storage devices.
Researchers at Penn State have found that the conventional wisdom about the relationship between domain size and piezoelectricity in ferroelectric materials is not always correct. In contrast to existing data suggesting smaller domains lead to higher piezoelectricity, this new study shows larger domain sizes can actually result in bett...
Theorists have observed a rare phenomenon called the quantum anomalous Hall effect in bilayer graphene, a naturally occurring, two-atom thin layer of carbon atoms. The researchers found eight different ground states exhibiting ferromagnetism and ferroelectricity simultaneously.
A team of researchers from Georgia Tech has discovered that zirconium dioxide antiferroelectric material exhibits predictable behavior when miniaturized, following a familiar law similar to ferroelectrics. This finding could lead to the design of more effective memory components and has implications beyond memory applications.
UNSW researchers stabilize a new intermediate phase in a room-temperature multiferroic material under stress, boosting electromechanical response by double its usual value. This breakthrough has exciting implications for next-generation devices and provides a valuable technique for international material scientists.
Researchers at the University of Virginia and Penn State are developing a new hardware platform called FerroCoDE that can generate solutions for complex problems more efficiently. The platform uses analog computing to exploit the spatial-temporal properties of oscillators and their synchrony.
Researchers have identified a new family of ferroelectric materials, including magnesium-substituted zinc oxide, that can be used for low-energy digital storage. These materials have the potential to revolutionize information and energy storage, offering improved performance and reduced power consumption.
Researchers found a solution to overcome ion interference in perovskite transistors, enabling room-temperature operation. The breakthrough uses ferroelectric materials to mitigate ion transport, promising applications in low-cost electronics.
Researchers at Martin-Luther-University Halle-Wittenberg created a new material by combining barium titanate, strontium titanate, and calcium titanate in a lattice. The resulting ferroelectric-paraelectric superlattice significantly enhances the photovoltaic effect, producing up to 1,000 times more power than pure barium titanate.
Researchers at the University of Sydney have made a breakthrough in understanding ferroelectric fatigue, a major cause of electronic device failure. By observing the degradation process at the nanoscale, they hope to inform the design of longer-lasting devices with better endurance.
Researchers at NTU Singapore have created a new material that can flex and bend 40 times more than its competitors, opening the way to better micro machines. The hybrid material generates electricity effectively when bent, potentially recharging batteries in gadgets from everyday movements.
A POSTECH research team has developed a CMOS-compatible 3D ferroelectric memory with ultralow power consumption and high speed. The new material and structure ensure low power consumption and high speed, achieving speeds several hundred times faster than conventional flash memory.
Ferroelectric materials display unique patterns due to non-equilibrium dynamics and topological defects, driving subsequent evolution. A new study finds phase separation kinetics as a common framework for understanding these patterns.
Researchers have discovered ultra-high piezoelectric coefficients in hydrogen-bonded ferroelectrics, exceeding that of PZT by more than 3 times. The phenomenon is sensitive to strain and can be tuned to room temperature by applying a fixed strain.
Ihlefeld's research focuses on developing universal, pure, and smooth thin films for transistors in high-temperature environments. His innovation aims to enable the design of new microelectronics with ultra-thin insulating materials.