Articles tagged with Ferroelectricity
Researchers at NTU Singapore have created a new material that can flex and bend 40 times more than its competitors, opening the way to better micro machines. The hybrid material generates electricity effectively when bent, potentially recharging batteries in gadgets from everyday movements.
A POSTECH research team has developed a CMOS-compatible 3D ferroelectric memory with ultralow power consumption and high speed. The new material and structure ensure low power consumption and high speed, achieving speeds several hundred times faster than conventional flash memory.
Ferroelectric materials display unique patterns due to non-equilibrium dynamics and topological defects, driving subsequent evolution. A new study finds phase separation kinetics as a common framework for understanding these patterns.
Researchers have discovered ultra-high piezoelectric coefficients in hydrogen-bonded ferroelectrics, exceeding that of PZT by more than 3 times. The phenomenon is sensitive to strain and can be tuned to room temperature by applying a fixed strain.
Ihlefeld's research focuses on developing universal, pure, and smooth thin films for transistors in high-temperature environments. His innovation aims to enable the design of new microelectronics with ultra-thin insulating materials.
A new UNSW study comprehensively reviews the magnetic structure of bismuth ferrite (BiFeO3), a multiferroic material that displays both magnetic and electronic ordering at room temperature. This unique property allows for low-energy switching in data storage devices, making it a promising material for future, low-energy data storage.
Berkeley Lab researchers introduce isolated defects to a type of commercially available thin film, creating a top-performing energy storage material. The new material has more than twice the energy storage density of previously reported values and 50% higher efficiencies.
The US Department of Energy has awarded Penn State over $10 million to develop new ferroelectric memory materials that can be stacked in the third dimension above processor chips. This breakthrough technology aims to mitigate the von Neumann bottleneck, allowing for seamless communication between memory and computation.
A Berkeley Lab-led team has gained insight into bacterial DNA packing, enabling potential control over microbial behavior. Researchers at JBEI have developed synthetic biology tools unlocking complex plant engineering, allowing for more sophisticated traits in plants. High-performance windows with reduced energy consumption will be ins...
Researchers have gained a new understanding of relaxor ferroelectric behavior, which relies on both experiment and theoretical modeling. This breakthrough shows that relaxor ferroelectricity in polymers comes from chain conformation disorders induced by chirality.
Researchers have discovered a new liquid phase of matter, the ferroelectric nematic, which exhibits strong polar ordering and can be controlled by electric fields. This discovery opens up new possibilities for technological innovations, including advanced display screens and reimagined computer memory.
Researchers at Spintec Laboratory and CNRS/Thales Laboratory developed a non-magnetic system to detect spin information at low power. This breakthrough enables the creation of ferroelectricity-based spintronic devices that consume significantly less energy than traditional systems.
Researchers synthesized a unique organic-inorganic hybrid crystal with controllable ferroelectricity and chirality, enabling new electrical, magnetic, or optical properties. This discovery could lead to advancements in communication and computing technologies.
Researchers found evidence of an inverse transition in ferroelectric ultrathin films, defying fundamental laws. The discovery could lead to breakthroughs in data storage, microelectronics, and sensors.
An international team of researchers found that applying AC electric fields to certain materials makes internal crystal domains bigger and the crystal transparent. The crystals also exhibit ultrahigh piezoelectricity and high transparency after polishing.
Researchers have made a breakthrough in understanding the crystalline structure of hybrid halide perovskites, which could lead to improved stability and efficiency. The study found that ferroelectric effects are possible in these materials, which could increase their efficiency.
Researchers at Max Planck Institute create high-performance nylon capacitors using a new method, paving the way for flexible and transparent electronic devices. The thin films are several 100 times thinner than human hair and can be used in wearable electronics.
Researchers develop a technique called dimensional stacking to improve data analysis for materials scientists. By organizing data based on physical and chemical properties, machines can gain insights into complex materials like ferroelectrics. This approach shows that human experience still has a role in the age of machine intelligence.
Researchers have successfully developed a ferroelectric FET with ferroelectric-HfO2 and ultrathin IGZO channel, demonstrating nearly ideal subthreshold swing and mobility higher than poly-silicon. The device achieves low-power, high-speed, and high-capacity memory capabilities.
Researchers have discovered three key paths for coupling magnetism and ferroelectricity, enabling the interaction between spin moments and electric dipoles in solids. This breakthrough has significant implications for materials science and engineering.
Scientists from the University of Groningen created block copolymers from PVDF that preserve its ferroelectricity while allowing tunable characteristics. These copolymers enable various applications, including flexible organic electronics and energy storage.
A team of researchers has demonstrated that laser-generated crystals in glass can be manipulated to control their ferroelectric domain structure. This allows for the creation of new optical devices with high efficiency and low loss links, crucial for future quantum information transfer systems.
Researchers at the University of Groningen have successfully created nanosized ferroelectric materials using hafnium oxide, which can store information like magnetic bits. The discovery could lead to more efficient and compact computer memory by leveraging the unique properties of these materials.
A new model by the University of Tokyo Institute of Industrial Science has shed light on the physical principle behind controlling crystal materials. The findings have practical benefits for applications such as non-volatile memory devices and electro-mechanical actuators.
A Princeton-led study reveals that electrons congregate in one valley of bismuth crystals, creating a type of electricity called ferroelectricity. This emergent behavior has the potential to enhance modern electronic devices and inspire new technologies.
Researchers at Argonne National Laboratory used novel tools to study local order in relaxor ferroelectrics, revealing a correlation between butterfly-shaped diffuse scattering and piezoelectric behavior. This discovery could lead to the development of non-lead-based materials with improved properties.
A Rutgers-led international team of scientists has verified a 53-year-old theory on ferroelectric metals, creating a new class of two-dimensional artificial materials that exhibit ferroelectric-like properties at room temperature. These findings have the potential to spawn a new generation of multi-functional devices and applications.
Scientists from Lobachevsky University study Aurivillius phases for potential non-volatile memory chips. They determine operating temperature ranges and structural features, finding that linear dimensions increase more evenly throughout the material during transition to paraelectric state.
Guus Rijnders has been awarded the Julius Springer Prize for Applied Physics for his pioneering research on pulsed laser deposition and its applications in interface engineering. His work focuses on creating complex materials with novel functionalities, including brain-inspired electronics and sensors.
Researchers at Penn State designed a new material with twice the piezo response of existing commercial ferroelectric ceramics. The material's unique structure increases its dielectric properties and piezoelectric effect, making it suitable for medical ultrasound applications.
The study reveals that bismuth doping in PbSnSe films causes a ferroelectric phase transition, changing the allowable energy levels of electrons. This effect enables the development of new functionality, including lossless conduction of electricity.
Researchers at Nagoya University have created a way to manipulate the domain structure of lead zirconate titanate films, a crucial step for future electronic and electro-mechanical devices. By controlling the switching of domains, they can potentially accelerate the development of next-generation technologies.
Researchers at Berkeley Lab expand the temperature range of ferroelectric materials by creating a polarization gradient in a thin film. This enables devices to operate reliably in extreme environments, reducing power consumption and component count.
Lithium-sulfur batteries show promise for high-energy storage, but rapid capacity fade hinders their use. A new approach using ferroelectric nanoparticles improves cycle stability by entrapping polysulfides.
A Northwestern University and Los Alamos National Laboratory team developed a novel workflow to design new materials with useful electronic properties. By combining machine learning and density functional theory calculations, they created design guidelines for ferroelectricity and piezoelectricity.
Researchers have developed a theoretical map to use ferroelectric material to process information using multivalued logic, enabling the same physical switch to encode multiple values. This could lead to significantly more efficient memory units and processors, crucial for realizing neuromorphic computing.
Researchers discover a mineral with the right properties to harness energy from multiple sources simultaneously. The material, KBNNO, can generate electricity from heat, pressure, and even movement, paving the way for more sustainable wearable technology.
Researchers successfully confine individual H?O molecules within nanosized cavities in beryl crystals, exhibiting ferroelectric properties. This discovery could have implications for various fields, including biology, chemistry, and geology.
Researchers at Oak Ridge National Laboratory have discovered the key to piezoelectric excellence in relaxor-based ferroelectrics, enabling more detailed electrical signals and better images in medical ultrasound. The findings may provide knowledge needed to accelerate the design of functional materials for diverse applications.
The Volkswagen Foundation has selected four research projects from over 200 applications, focusing on young academics and independent of current conflicts. The projects cover Slavonic Studies, Hydrosciences, Mathematics, and Physics, with a particular emphasis on transboundary rivers and domain wall conductivity.
Researchers at Penn State University have developed a unique blend of ferroelectric polymers that can hold absorbed heat even after the external field has been switched off. This allows the material to generate cooling when the field is turned on, but no subsequent heating when the field is turned off.
This review article presents an extended study on the crystal and magnetic structure of multiferroic hexagonal manganite RMnO3, which exhibits ferroelectric and magnetic orders. The research highlights the importance of strong interactions between these orders, leading to unique properties.
A new type of RFID chip is virtually impossible to hack, preventing identity theft and high-tech burglaries. The chip uses ferroelectric crystals to thwart power-glitch attacks and features a bank of capacitors as an on-chip energy source.
Researchers at Northwestern University have successfully created a multiferroic material by sandwiching a polar metallic oxide between an insulating material. This breakthrough design strategy realizes elusive multiferroic properties, offering potential applications in low-power electronics, logic processing, and memory storage.
Researchers at EPFL have developed a way to control the formation of conductive pathways in ferroelectric materials, allowing for the creation of adaptable electronic circuits. This technology has the potential to miniaturize devices and enable resilient circuits that can function even with damaged components.
Researchers have discovered new complex oxides that exhibit both magnetic and ferroelectric properties, combining characteristics of logic circuits and spintronics. The findings, published in Scientific Reports, bring scientists closer to creating ultra-efficient memory devices with massive storage capacities.
Researchers at NIST and Simon Fraser University have discovered the origin of distinct differences in relaxor behavior compared to ferroelectric PZT. The study found that random electric fields vary randomly from unit cell to unit cell in relaxors, leading to a greater piezoelectric effect.
Researchers have discovered a physical phenomenon that could prove suitable for use in further data aggregation, allowing information to be stored in the tiniest of spaces. The discovery was made using advanced electron microscopes and computer simulations, and involves ferroelectric polar properties within antiferroelectric materials.
Researchers at ORNL led by Sergei Kalinin discovered complex and unpredictable patterns on ferroelectric material's surface when written in dense arrays. The study suggests the possibility of memcomputing, where information storage and processing occur on the same physical platform.
For the first time, researchers have observed how reducing dimensions affects ferroelectrics' susceptibility to size- and strain-induced effects. This work provides a detailed modeling and experimental study of pyroelectricity, with direct implications for next-generation devices.
Researchers at UC Berkeley have demonstrated negative capacitance in ferroelectric materials, a phenomenon that can amplify charge for a given voltage. This breakthrough has the potential to revolutionize computing by enabling the creation of low-power transistors without compromising performance.
Researchers developed a multiferroic material that reacts to both magnetic and electric fields at room temperature, fulfilling a long-held dream. The material's ferromagnetic properties were demonstrated using X-ray magnetic circular dichroism, paving the way for more efficient data storage and logical switches.
Researchers have developed a graphene-based device that stores information in ferroelectric material, increasing fidelity and reducing operating voltage. The device's high-speed performance is expected to overcome issues associated with traditional memory devices.
Scientists have found a new mechanism that couples electric and magnetic properties in a material, enabling faster and energy-efficient logic, memory, and sensing technology. This breakthrough could lead to the development of multiferroic materials, which are rare in nature but can display both ferromagnetic and ferroelectric properties.
Scientists have developed a novel method to create ferroelectric nanostructures directly on flexible plastic substrates using thermochemical nanolithography and heated AFM tips. This breakthrough enables the production of complex structures for energy harvesting, sensors, and actuators at low temperatures.
Researchers discovered that domain walls in ferroelectric materials act as dynamic conductors, enabling tunable and metastable memory functionality. This discovery could lead to a new paradigm of electronic memory storage.
Scientists at Tohoku University have recorded data at a world-record density of 4 trillion bits per square inch using the ferroelectric data storage method. This density is eight times that of today's most advanced magnetic hard-disk drives.
L. Eric Cross is recognized for his leadership in the science and applications of ferroelectric materials, with current work on flexoelectric composites offering a new generation of lead-free transducers. He has also made significant contributions to sonar undersea transducers and medical ultrasound machines.
Scientists at Cornell University have successfully created a new ferroelectric material that can store electronic information instantly, paving the way for next-generation memory devices. The research involves depositing strontium titanate on silicon to create a special state called ferroelectric.
A multi-scale modeling study at Penn reveals a new theory of behavior for domain-wall motion in ferroelectric materials, reproducing experimental data long at odds with existing theories. The study confirms that small dipoles play a key role in smoothing transition regions as the wall moves.