Researchers developed a method to observe local conductivity changes in memristors using conductive liquid electrolytes. The method reveals the formation of nanoscale spots responsible for conductivity changes, allowing for distinction between electrical and thermal contributions.
Researchers at Lanzalab developed a compact model to describe the functioning of RRAM devices using graphene/h-BN/graphene van der Waals structures. The model accurately predicts the device's behavior and explains dispersion in cycle-to-cycle data, enabling simulation and mass production.
Researchers have developed a family of resistive random access memories using multilayer hexagonal boron nitride as dielectric, showing promising retention times and low cycle-to-cycle variability. The devices exhibit coexistence of forming free bipolar and threshold-type resistive switching.