Researchers at the University of Tokyo have created a tin dioxide semiconductor with the highest mobility ever reported, enabling more efficient solar panels and touch-sensitive displays. This breakthrough could lead to improved transparency and conductivity in materials, benefiting various industries.
Researchers at Helmholtz-Zentrum Berlin have developed a new tandem solar cell made of CIGS and perovskite, achieving an efficiency of 24.16 percent. This innovation has created a new branch on the NREL chart for two-terminal tandem cells.
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Researchers have fabricated high-performance mid-infrared laser diodes directly on microelectronics-compatible silicon substrates, paving the way for low-cost sensors for real-time environmental sensing. The new fabrication approach reduces costs by using industry-standard processing techniques.
Researchers discovered a new mechanism of optical gain in two-dimensional materials that requires only extremely low input power. This breakthrough has significant implications for the development of energy-efficient photonic devices, potentially reducing the need for high electrical power.
Researchers at New York University develop guidelines for optimal band gap values in wide-band gap semiconductors for efficient underwater use. Various materials, such as organic and alloys, are shown to be suitable for deep waters, potentially extending the range of autonomous submersible vehicles.
Researchers at Tokyo Institute of Technology and Socionext Inc. designed the smallest all-digital PLL, reducing area, power consumption, and jitter while achieving best performance. The synthesizable PLL is commercially viable for 5 nm semiconductors, crucial for cutting-edge applications like AI and IoT.
Researchers from ITMO University have proposed a technology for manufacturing high-efficiency solar cells based on A3B5 semiconductors integrated on a silicon substrate, which may increase the efficiency of existing photovoltaic converters by 1.5 times. The new technology could lead to more effective and affordable solar energy solutions.
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Researchers at Hokkaido University have developed a method to grow nanosized semiconductors on a gold surface using a gold butterfly-shaped nanostructure. The approach uses localized heat to trigger hydrothermal synthesis, enabling precise control over semiconductor formation.
Researchers at Northwestern University have developed a new semiconductor neutron detector that can absorb thermal neutrons and generate electrical signals. The material is highly efficient, stable, and can be used in small, portable devices for field inspections or large detectors for national security applications.
Researchers have created a new type of semiconductor neutron detector that boosts detection rates by reducing the number of steps involved in neutron capture and transduction. The LiInP2Se6 material converts neutrons into pairs of charged electrons and holes, generating a current directly detectable thermal neutrons.
Sufei Shi's lab at Rensselaer Polytechnic Institute has been working on fabricating high-quality transition metal dichalcogenides (TMDCs) to study their properties and potential applications. The researchers have found an exciting particle called an exciton, which holds a lot of energy that can survive at room temperature.
Researchers at the University of Illinois have developed a new heat model that can help improve the thermal conductivity and reduce defects in gallium nitride semiconductors. This could lead to longer-lasting electronic devices with improved reliability.
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Researchers have discovered point defects in beta gallium oxide, which could impact its efficiency as a semiconductor. The defects can provide opportunities for unprecedented control of the material's properties if properly manipulated.
Researchers have successfully controlled the optical properties of semiconductors using acoustic waves at room temperature. This breakthrough enables the dynamical manipulation of excitonic properties at high speed, opening up new avenues for applications such as acousto-optic devices and sensor technology.
Researchers have developed a new material that combines semiconducting properties with intrinsic stretchability and full degradability. The material can be stretched to twice its normal length without compromising electrical performance and degrades completely within 10 days in a weak acid.
Researchers from Cardiff University have discovered metastability in gallium arsenide compound semiconductor material, a phenomenon that could affect device stability. The findings could lead to improved materials and structures for electronic devices, such as smartphones, GPS, and satellites.
Researchers have clarified a new synthesis mechanism for transition metal dichalcogenides (TMD), a type of semiconductor atomic sheet. The breakthrough enables the large-scale integration of atomic-order materials, paving the way for next-generation flexible electronics.
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Researchers found that dislocations negatively impact carrier dynamics, leading to a four-fold increase in electron lifetime when defect densities are reduced. Halide perovskite has improved from 3% to 25% efficiency over the past decade.
A team of researchers discovered an effective method for removing lattice defects from crystals, particularly useful for semiconductor materials. By adding hydrogen and then annealing at low temperatures, they created an ordered phase of boron with a large unit cell, overcoming previous difficulties in achieving this structure.
Researchers at Tohoku University developed a new method to quantify the efficiency of crystal semiconductors, a crucial step towards creating more efficient light-emitting diodes (LEDs) and solar cells. The method uses photoluminescence spectroscopy to detect the emitted light energy, providing a unique indicator of the crystal's quality.
A team of engineers at Washington University in St. Louis has found a more stable, less toxic semiconductor for solar applications, made up of potassium, barium, tellurium, bismuth and oxygen (KBaTeBiO6). The new compound has a band gap of 1.88 eV, which is close to the halide perovskites, making it promising for solar cell applications.
Researchers at Tokyo Tech and NTT Advanced Technology Corporation have developed a low noise and high sensitivity MEMS accelerometer with a mass per area increase using multi-layer gold structures. This breakthrough enables high-resolution accelerometers to detect 1 μG level input acceleration, with applications in medical technology, ...
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Researchers from ETH Zurich have discovered a way to boost polariton-polariton interaction, enabling strong coupling between matter and light. This breakthrough opens up new perspectives for photonics and many-body physics.
Scientists visualized the distribution and optical behavior of magnesium (Mg) ions in Gallium Nitride (GaN) using advanced microscopy techniques. This breakthrough enables mass production of p-type GaN semiconductors, a crucial component for high-performance energy-saving devices.
A team led by UC Riverside physicists has identified dark trions as a promising carrier of quantum information, with a lifetime of over 100 times longer than bright trions. This breakthrough could revolutionize information transmission and enable new ways of data transfer.
Researchers from Cardiff University have developed ultrafast Compound Semiconductor technology, creating highly sensitive avalanche photodiodes with lower electronic noise than silicon rivals. This breakthrough has the potential to yield new class of high-performance receivers for applications in networking and sensing.
Researchers at HZDR have developed nanowires with tunable shells, enabling them to operate over a wide energy range. This breakthrough increases the potential of nanowires for various applications, including LEDs and solar cells.
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Scientists at NREL and partner institutions create large stability map of ternary nitrides, highlighting promising compositions for experimental discovery. The map uses computational materials science and machine-learning algorithms to accelerate the process, opening new avenues for nitride research.
Researchers at Rensselaer Polytechnic Institute have discovered a way to manipulate tungsten diselenide to enable faster, more efficient computing and quantum information processing. The findings lay the foundation for future development of next-generation computing and storage devices.
Allison Osmanson, a UTA doctoral student, has received a prestigious fellowship from the Semiconductor Research Corp. to work on microelectronics packaging. She will receive funding and technical guidance from Texas Instruments.
Researchers at Skoltech have developed new perovskite-inspired semiconductors with enhanced light-conversion efficiency of over 24% for solar cells. The materials overcome toxicity and stability issues by introducing bismuth and antimony halides, exhibiting record-high performance in solar cells.
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Researchers at DGIST developed a graphene-based transmission line with improved electron speed, contributing to faster processing speeds in semiconductor and communication devices. The team increased device concentration inside graphene, reducing resistance and enhancing electrical characteristics.
Researchers at TU Wien develop innovative light-emitting diode by harnessing radiative decay of exciton complexes in ultra-thin layers, enabling precise control over desired light wavelengths.
Researchers at ICFO have developed an infrared detector using Bismuth Sulphide flakes with sulphur vacancies, creating extended in-gap states for sub-bandgap absorption. The resulting device has high gain, low noise, and sensitivity, enabling fast response times and broad spectral coverage.
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Researchers develop qubits based on semiconductors, showcasing high control fidelity and integration with classical CMOS technology. Challenges include effective readout methods, uniform materials, and scalable designs to overcome obstacles in achieving fault-tolerant quantum computing.
Researchers at Stanford University have developed a new measurement technique that confidently shows the efficiency of quantum dots can compete with single crystals. This breakthrough could lead to the development of new technologies and materials requiring high semiconductor efficiency.
Researchers developed a hybrid chip that uses pulse-width encoding to conserve power. The chip enables small robots to operate for several hours on low power consumption, facilitating reconnaissance, search-and-rescue, and other missions. It also accommodates model-based programming and collaborative reinforcement learning.
A new Weyl semimetal delivers the largest intrinsic conversion of light to electricity, exceeding previous records by tenfold. The unique material exploits electron chirality for non-linear generation of direct current.
Researchers create a unique platform to study quantum optical physics on the nanoscale by stacking 2D materials at angles to trap particles. The team successfully traps hundreds of excitons using a moiré pattern, which can be controlled by a twist, enabling precise manipulation and interaction with individual excitons.
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Scientists have developed a method to directly write quantum light sources into monolayer semiconductors, enabling precise placement and real-time design of arbitrary patterns of single photon emitters. This breakthrough paves the way for emerging applications in secure communications, sensing, and quantum computation.
A machine learning approach predicts changes in material properties from straining the material, enabling the engineering of new materials with tailored properties. The technique has implications for industries such as communications, information processing, and energy.
The study reveals that using a metallic substrate with higher chemical reactivity can significantly increase the phase transition yield of 2D-TMD materials. This method enables the easy achievement of structural phase transitions and opens possibilities for new device applications such as low contact resistance electrodes.
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Researchers at the University of Groningen have produced devices with stable Germanene, revealing its electronic properties. The material exhibits insulating, semiconducting, and metallic conducting behavior depending on heat treatment, making it suitable for spintronic device applications.
Researchers develop flexible, inexpensive material to convert Wi-Fi signals into electricity. The new device can power large-area electronics, wearables, medical devices, and more with a maximum output efficiency of 40 percent.
Scientists have created a new way to generate electricity using light, which operates at speeds 5,000 times faster than current computers. The 'interatomic light rectifier' uses the interaction between atoms to produce directed electric currents.
Researchers at Tohoku University have developed a 128Mb-density STT-MRAM with a write speed of 14 ns, setting a new world record. This technology has the potential to significantly reduce power consumption in embedded memory applications.
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Susan Fullerton is developing all 2D materials for next-generation electronics, with potential applications in information storage, brain-inspired computing, and security. Her research uses a novel approach to ion utilization, which could represent a paradigm shift in high-performance computing.
Engineers are working on a $1.88 million grant to study the fundamental properties of gallium oxide for use in high-voltage power systems. The goal is to minimize energy losses and enhance performance in devices such as surveillance drones, all-electric airplanes, and electric vehicles.
A team of scientists has discovered a single-site, visible-light-activated catalyst that converts carbon dioxide into 'building block' molecules. The breakthrough could lead to the use of sunlight to turn a greenhouse gas into hydrocarbon fuels.
Researchers at Harvard's Wyss Institute have created a novel yeast biohybrid system using an adaptable light-harvesting semiconductor approach. The innovation enables the production of complex chemicals by harnessing energy from light, significantly enhancing product yields and opening up new paths for biomanufacturing.
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Researchers at Nagoya Institute of Technology have gained new insights into the mechanisms behind semiconductor degradation in 4H-SiC material, a popular alternative to standard materials. They discovered that specific types of atomic deformation lead to faster carrier recombination and device degradation.
Researchers find that a previously unreported intermediate radical zinc oxo-alkoxide cluster with gapless electronic states is formed before the growth of semiconducting ZnO phase. The transformation from insulator to conductor-like material occurs rapidly, and further heating leads to semiconductor properties.
A new paper reveals unique excitonic complex particles in atomically thin semiconductors, possessing a new quantum degree of freedom called valley spin. This discovery could lead to novel applications in electronic and optoelectronic devices.
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Researchers discovered coherent resonance and stochastic resonance in an excitable semiconductor superlattice, enabling faster detection of weak signals. This breakthrough can be used to extract information from noisy data, analyze astronomical observations, and process image signals.
Researchers at UC Berkeley have developed protective suits for bacteria that allow them to thrive in environments without oxygen. The hybrid system mimics photosynthesis and captures carbon dioxide, producing various chemical compounds that can be used by industry or in space colonies.
Researchers at Osaka University developed a two-step process to produce materials with good morphological properties and excellent photoresistor performance. The technique improves photo response performance by up to 100 times compared to other methods, making bismuth sulfide a promising material for optoelectronic devices.
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Researchers at DGIST developed an artificial synaptic device that simulates the human brain's memory function. The device uses tantalum oxide to mimic synapses and has overcome durability limitations of current devices. It can store multiple values, reducing power consumption by over one-thousandth compared to digital signals.
Osaka University-led researchers developed non-toxic nanoparticles that emit vivid, clean colors with high energy efficiency. The new particles use a chaotic material shell to achieve pure colors without rigid structures.
Researchers at MIT have developed soft hardware that can be worn, integrating high-speed optoelectronic semiconductor devices into fibers woven into washable fabrics. This breakthrough could lead to a new 'Moore's Law' in fibers, enabling rapid growth in capabilities.
Researchers from the Universities of Konstanz and Paderborn have successfully demonstrated Wannier-Stark localization in a high-purity gallium arsenide crystal. This state results in drastic changes to the electronic structure of the crystal, leading to extreme optical nonlinearity and potential chemical reactivity.
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