Articles tagged with Semiconductors
Researchers at Iowa State University have discovered a new class of low-cost and environmentally friendly semiconductors using sodium, bismuth, and sulfur. The materials exhibit ideal properties for solar cells, including a stable band gap and resistance to air and water exposure.
A team of researchers will work on creating hydrogen fuel from renewable sources, such as sunlight, to produce a clean alternative for transportation and residential applications. The goal is to make headway in the food-energy-water nexus by bypassing natural photosynthesis.
For the first time, a Toffoli gate was experimentally demonstrated in a semiconductor three-qubit system. This achievement marks an important progress in scaling up semiconductor quantum dot-based qubits and motivates further research on larger-scale semiconductor quantum processors.
A new imaging technique uses a super sharp needle to nudge individual nanoparticles into different orientations, capturing 2D images to reconstruct 3D pictures. This method allows for the observation of defects in nanostructures like semiconductors and proteins, which can lead to better characterization and control of their production.
The Lehigh University team is building a new High Pressure Spatial chemical vapor deposition (HPS-CVD) reactor to create new materials with extreme conditions. The device will enable the growth of III-nitride and oxynitride semiconductors, paving the way for sustainable energy solutions and innovative technologies.
Researchers at the University of Illinois have developed a new phase-transition cubic GaN material that doubles ultraviolet emission efficiency. The material's polarization-free nature enables improved performance in energy conversion devices, such as lighting systems.
Scientists at the University of Waterloo have created a new class of semiconductors by controlling the orientation and size of single-walled carbon nanotubes. This breakthrough could lead to more powerful devices with improved battery life, as they consume less power.
Researchers predict few-layer Tellurium (FL-α-Te) as a superior semiconductor to black phosphorus due to its high carrier mobility, tunable bandgap, and strong light absorption. FL-α-Te exhibits anisotropic inter-chain vibrational behaviors and nearly isotropic strong light absorption, making it an ideal material for thermoelectrics.
Researchers at the University of Groningen have developed a new metal-semiconductor interface that combines storage, memory and processing in one unit, paving the way for brain-inspired computing architectures. The device uses a spin-memristor with tunability, enabling non-volatile storage and operation at room temperature.
Researchers at UCSB have successfully measured Berry curvature in solid matter for the first time using a unique laser experiment. This breakthrough has significant implications for designing new materials with optimized Berry curvature for applications in electronic and optical devices.
Researchers at Aalto University have successfully doped gallium nitride with beryllium, showing promise for reducing energy losses in power electronics. The findings suggest that the material can be controlled to achieve significant improvements in energy efficiency, potentially cutting global power consumption by up to ten percent.
KAUST researchers have created a new method for producing solar cells using lateral p-n heterojunctions, which achieve greater power conversion efficiency than traditional methods. This breakthrough simplifies the production process and enables cheaper solar tracking systems to become redundant.
Gallium selenide, a 2D semiconductor, loses electrical conductivity in air due to oxidation, hindering its application in nanoelectronic devices. Encapsulating GaSe in vacuum-manufactured devices with protective layers can maintain its optoelectronic properties.
Researchers at the University of Houston have developed a new form of stretchable electronics that can serve as an artificial skin, allowing a robotic hand to sense temperature differences. The breakthrough enables the creation of biomedical devices such as health monitors and medical implants with improved functionality.
Researchers developed a silver micron-particle sintering joining technology that can bond various electrodes, including Cu and Au, at low temperatures. This technology achieves high reliability and low electrical resistivity, contributing to energy saving and reduction of CO2 gas.
A new device developed by Washington State University physicist Yi Gu converts heat energy into electricity up to three times more efficiently than silicon. The multilayered composite material, called a van der Waals Schottky diode, has the potential to provide an extra source of power for electronics, cars, and other devices.
Scientists have created cyborg bacteria that can produce acetic acid from carbon dioxide using sunlight as energy, outperforming natural photosynthesis with an efficiency of over 80%. This technology has the potential to replace traditional petrochemical industries and provide a zero-waste solution.
Ludwig-Maximilians-Universität München researchers have developed a method for producing semi-conducting nanocrystals with controlled size, enabling the creation of color-tuned LEDs. The new method uses perovskite-based nanocrystals and allows for high color fidelity and industrial-scale production.
A University of Michigan team has created a method to add metallic nanoparticles into semiconductors with virtually no added manufacturing cost. The process enhances LED lighting efficiency and allows for precise control over the distribution of particles, potentially enabling future applications such as invisibility cloaks.
The study found that reducing oxygen in certain alloys can improve grain size stability, leading to stronger and more durable materials. Researchers developed nearly oxygen-free alloy powders with significant improvements in thermal stability.
Researchers demonstrate controlled spalling layer transfer technique to create multiple thin layers from a single GaN wafer, enabling improved thermal characteristics and lightweight stackability. This method also allows for measurement of material properties and can be applied at various stages of fabrication.
A new DARPA project aims to create an implanted brain-interface device with one million channels to support brain function. The device, developed by Columbia University researchers, uses silicon electronics and wireless powering for non-invasive stimulation and recording from the sensory cortex.
A team of engineers from the University of Wisconsin-Madison and the University at Buffalo has developed a powerful new photodetector that combines unique fabrication methods and light-trapping structures. The device increases light absorption in thin materials, enabling smaller optoelectronic devices with improved performance.
Researchers found that black phosphorus can be tuned by enclosing it in the right way, opening new possibilities for its use. The material's band gap and optical absorption changed dramatically when encapsulated.
Metal-nitride nanowires show high sensitivity to light when arranged in nano-sized wires, but thermal effects significantly impact their performance at room temperature. Researchers have developed a detailed study to quantify the effect of photoinduced entropy on device performance.
Researchers at Berkeley Lab have discovered a new type of semiconductor that can emit multiple bright colors from a single nanowire, challenging traditional quantum dot displays. The 'soft' semiconductors use ionic bonds instead of covalent bonds, making them easier to reconfigure and produce.
Heterostructural alloys combine materials with different structures to control behavior, providing an additional degree of control. The study focuses on semiconductor applications, creating metastable phases that can be used in solar cells and other devices.
Researchers at University of Michigan develop cost-effective material to capture near-infrared light in solar cells, making concentrator photovoltaics more efficient and practical for large-scale electricity generation. The new alloy is significantly less expensive than previous formulations and enables easier manufacturing.
Researchers created new alloys by mixing materials with different atomic arrangements, revealing a predictive route for properties of other alloys. The breakthrough allows for the use of commercial thin film deposition methods to fabricate heterostructural alloys for real-world semiconductor applications.
Researchers created a new computing system that employs electronic oscillators to solve graph coloring tasks, a type of problem that challenges modern computers. The system works by harnessing the natural ability of oscillators to synchronize and operate at different phases, mimicking the solution to a graph coloring problem.
Researchers from Graphene Flagship have successfully integrated graphene into a CMOS circuit, enabling the creation of high-resolution image sensors that can detect UV, visible, and infrared light. This technology has vast applications in fields such as safety, security, and medical imaging.
Researchers at ICFO have developed a graphene-QD CMOS image sensor that can capture visible and infrared light simultaneously. This breakthrough technology enables applications such as night vision, food inspection, fire control, and environmental monitoring, while also reducing production costs and enabling mass-market production.
Researchers from the National University of Singapore have discovered novel properties of strontium niobate, a material that displays both metallic type conduction and photocatalytic activity. The material exhibits an intrinsic plasmonic absorption, allowing it to absorb visible photons, which is exceptional among metals.
Scientists have developed a method to precisely control graphene's electronic transport properties using in-situ Raman spectroscopy. This technique allows for the creation of tailored graphene-based materials with controlled function, enabling their utilization in the semiconductor industry.
Researchers at North Carolina State University developed a new method for manipulating cells using light, creating an effective tool for bioelectronics. Persistent photoconductivity allows the material to become more conductive when exposed to light, increasing surface charge and directing cells to adhere.
Researchers demonstrate a 1/3 reduction in thermal resistance using WOW technology for 3D DRAM applications, improving heat dissipation and enabling higher stacking capacities. The study identifies key factors contributing to thermal resistance and achieves a significant reduction in temperature rise.
Researchers have developed a new method to improve semiconductor fiber optics, which could revolutionize global data transmission. The approach, led by Xiaoyu Ji, reduces imperfections in the fiber core, allowing for more efficient light transmission.
A team from Japan successfully generated indistinguishable photons using a novel single-photon source, nitrogen impurity centers in III-V compound semiconductors. The photons' high degree of indistinguishability is essential for quantum information technology such as quantum teleportation and linear optical quantum computation.
Researchers at Carnegie Institution have synthesized pure samples of Si-III, a semiconductor with an extremely narrow band gap, narrower than diamond-like silicon crystals. This discovery may lead to unpredictable technological breakthroughs in fields like solar energy and electronics.
Researchers at ETH Zurich have solved the mystery of producing nanoplatelets, which are flat, uniform crystals with striking colors. The team developed a theoretical model and experimentally confirmed its predictions, paving the way for alternative materials to quantum dots in displays and solar cells.
The Tokyo Institute of Technology and Nippon Telegraph and Telephone Corporation have developed a spin-resolved oscilloscope to measure charge and spin signals. The device enables the observation of spin-charge-separation processes, paving the way for future plasmonics and spintronics applications.
The team successfully controlled the peaks of laser pulses and twisted light, moving electrons faster and more efficiently than electrical currents. This achievement brings us closer to developing fast 'lightwave' computers that can process information up to 100,000 times faster than current electronics.
Researchers control crystallization patterns in semiconductors by varying film thickness, enabling fine control over crystal orientation and position. This breakthrough facilitates high-quality, tailored polycrystal semiconductors for optoelectronics, photovoltaics and printed electronic components.
Researchers created a material that reduces signal losses in photonic devices, boosting the efficiency of lasers and other light-based technologies. The discovery addresses a key challenge in photonics by incorporating a semiconductor material into plasmonic metamaterials.
Researchers at Ulsan National Institute of Science and Technology create a new technique for enhancing Schottky Diode performance. By inserting a graphene layer, they overcome the contact resistance problem that has remained unsolved for 50 years.
Researchers at Tokyo Institute of Technology have developed a technique to measure the electric field within a working semiconductor device, enabling studies of next-generation electronics. The approach exploits single electron spins and nitrogen-vacancy centers in diamond, promising spatial resolution of 10 nm for complex devices.
Novel ultrathin semiconductors exhibit strong interaction with light, making them suitable for opto-electronics applications. The researchers' new polarimetric method enables efficient detection of valley polarization in these materials.
Researchers at Argonne have discovered a new approach to detail the formation of material changes at the atomic scale, capturing images of structural defects in palladium when exposed to hydrogen. This imaging capability will help validate models predicting material behavior and enable defect engineering for better materials.
Researchers at UCR have discovered a way to control the flow of heat in electronic devices using semiconductor nanowires. By confining acoustic phonons to these nanostructures, they can alter their energy spectrum and improve thermal management.
Researchers at Berkeley Lab integrated a water-splitting catalyst onto semiconductor to create more stable and efficient artificial photosystems. The composite film successfully supported chemical reactions without damaging sensitive semiconductors, achieving a three-day run time.
Researchers at UCSB found that trace metals like iron can act as nonradiative recombination centers in gallium nitride semiconductors, reducing LED efficiency. The study highlights the importance of controlling growth and processing to prevent metal impurities from affecting device performance.
Researchers at IBS discovered that hydrogenation of single-layer graphene proceeds rapidly over the entire surface, while few-layer graphene reacts slowly from the edges. Hydrogenation changes graphene's optical and electric properties. The study also found that defects or edges are necessary for the reaction to occur.
Researchers have found Fermi polarons, a new type of quasiparticle, in a certain type of semiconductors. This discovery challenges the previous assumption that excitons or trions are formed instead. The study provides valuable insights into the material's properties and has implications for basic research and potential applications.
A new semiconductor nanocomposite material can convert photons into mechanical motion, enabling microscopic robotic grippers and more efficient solar cells. The material's unique exciton resonance contributes to its extraordinary strength and optical absorption.
RIT engineers will use the ICP-RIE system to fabricate complex semiconductor devices, including light-emitting diodes and lasers. The new equipment strengthens RIT's fabrication capability in its Semiconductor & Microsystems Fabrication Laboratory.
UCSB researchers create high-performance tunable dielectrics using molecular beam epitaxy, overcoming material quality issues. The advancement enables adaptive electronic systems with potential applications in cellular communications and phased-array antennas.
Researchers at Notre Dame have identified a critical length scale marking the transition from zero-dimensional quantum dots to one-dimensional nanowires. The study provides new insights into the size- and shape-dependent properties of semiconductor nanostructures.
Researchers at McMaster University have developed a new method to isolate pure semiconducting carbon nanotubes from impurities. This breakthrough resolves a long-standing challenge in harnessing the potential of carbon nanotubes in electronics and computing.
A new method for making green LEDs has been developed by researchers at the University of Illinois, enhancing their efficiency and brightness. By creating gallium nitride (GaN) cubic crystals grown on a silicon substrate, the team has achieved powerful green light emission for advanced solid-state lighting.
Researchers at Berkeley Lab have developed a new method to predict material stability in semiconductors, crucial for creating efficient solar fuel generators. By analyzing bismuth vanadate, they found complex chemical instabilities that must be addressed to achieve stable performance.