Articles tagged with Semiconductors
Researchers from Graphene Flagship have successfully integrated graphene into a CMOS circuit, enabling the creation of high-resolution image sensors that can detect UV, visible, and infrared light. This technology has vast applications in fields such as safety, security, and medical imaging.
Researchers at ICFO have developed a graphene-QD CMOS image sensor that can capture visible and infrared light simultaneously. This breakthrough technology enables applications such as night vision, food inspection, fire control, and environmental monitoring, while also reducing production costs and enabling mass-market production.
Researchers from the National University of Singapore have discovered novel properties of strontium niobate, a material that displays both metallic type conduction and photocatalytic activity. The material exhibits an intrinsic plasmonic absorption, allowing it to absorb visible photons, which is exceptional among metals.
Scientists have developed a method to precisely control graphene's electronic transport properties using in-situ Raman spectroscopy. This technique allows for the creation of tailored graphene-based materials with controlled function, enabling their utilization in the semiconductor industry.
Researchers at North Carolina State University developed a new method for manipulating cells using light, creating an effective tool for bioelectronics. Persistent photoconductivity allows the material to become more conductive when exposed to light, increasing surface charge and directing cells to adhere.
Researchers demonstrate a 1/3 reduction in thermal resistance using WOW technology for 3D DRAM applications, improving heat dissipation and enabling higher stacking capacities. The study identifies key factors contributing to thermal resistance and achieves a significant reduction in temperature rise.
Researchers have developed a new method to improve semiconductor fiber optics, which could revolutionize global data transmission. The approach, led by Xiaoyu Ji, reduces imperfections in the fiber core, allowing for more efficient light transmission.
A team from Japan successfully generated indistinguishable photons using a novel single-photon source, nitrogen impurity centers in III-V compound semiconductors. The photons' high degree of indistinguishability is essential for quantum information technology such as quantum teleportation and linear optical quantum computation.
Researchers at ETH Zurich have solved the mystery of producing nanoplatelets, which are flat, uniform crystals with striking colors. The team developed a theoretical model and experimentally confirmed its predictions, paving the way for alternative materials to quantum dots in displays and solar cells.
Researchers at Carnegie Institution have synthesized pure samples of Si-III, a semiconductor with an extremely narrow band gap, narrower than diamond-like silicon crystals. This discovery may lead to unpredictable technological breakthroughs in fields like solar energy and electronics.
The Tokyo Institute of Technology and Nippon Telegraph and Telephone Corporation have developed a spin-resolved oscilloscope to measure charge and spin signals. The device enables the observation of spin-charge-separation processes, paving the way for future plasmonics and spintronics applications.
The team successfully controlled the peaks of laser pulses and twisted light, moving electrons faster and more efficiently than electrical currents. This achievement brings us closer to developing fast 'lightwave' computers that can process information up to 100,000 times faster than current electronics.
Researchers control crystallization patterns in semiconductors by varying film thickness, enabling fine control over crystal orientation and position. This breakthrough facilitates high-quality, tailored polycrystal semiconductors for optoelectronics, photovoltaics and printed electronic components.
Researchers created a material that reduces signal losses in photonic devices, boosting the efficiency of lasers and other light-based technologies. The discovery addresses a key challenge in photonics by incorporating a semiconductor material into plasmonic metamaterials.
Researchers at Ulsan National Institute of Science and Technology create a new technique for enhancing Schottky Diode performance. By inserting a graphene layer, they overcome the contact resistance problem that has remained unsolved for 50 years.
Researchers at Tokyo Institute of Technology have developed a technique to measure the electric field within a working semiconductor device, enabling studies of next-generation electronics. The approach exploits single electron spins and nitrogen-vacancy centers in diamond, promising spatial resolution of 10 nm for complex devices.
Novel ultrathin semiconductors exhibit strong interaction with light, making them suitable for opto-electronics applications. The researchers' new polarimetric method enables efficient detection of valley polarization in these materials.
Researchers at Argonne have discovered a new approach to detail the formation of material changes at the atomic scale, capturing images of structural defects in palladium when exposed to hydrogen. This imaging capability will help validate models predicting material behavior and enable defect engineering for better materials.
Researchers at UCR have discovered a way to control the flow of heat in electronic devices using semiconductor nanowires. By confining acoustic phonons to these nanostructures, they can alter their energy spectrum and improve thermal management.
Researchers at Berkeley Lab integrated a water-splitting catalyst onto semiconductor to create more stable and efficient artificial photosystems. The composite film successfully supported chemical reactions without damaging sensitive semiconductors, achieving a three-day run time.
Researchers at UCSB found that trace metals like iron can act as nonradiative recombination centers in gallium nitride semiconductors, reducing LED efficiency. The study highlights the importance of controlling growth and processing to prevent metal impurities from affecting device performance.
Researchers at IBS discovered that hydrogenation of single-layer graphene proceeds rapidly over the entire surface, while few-layer graphene reacts slowly from the edges. Hydrogenation changes graphene's optical and electric properties. The study also found that defects or edges are necessary for the reaction to occur.
Researchers have found Fermi polarons, a new type of quasiparticle, in a certain type of semiconductors. This discovery challenges the previous assumption that excitons or trions are formed instead. The study provides valuable insights into the material's properties and has implications for basic research and potential applications.
A new semiconductor nanocomposite material can convert photons into mechanical motion, enabling microscopic robotic grippers and more efficient solar cells. The material's unique exciton resonance contributes to its extraordinary strength and optical absorption.
RIT engineers will use the ICP-RIE system to fabricate complex semiconductor devices, including light-emitting diodes and lasers. The new equipment strengthens RIT's fabrication capability in its Semiconductor & Microsystems Fabrication Laboratory.
UCSB researchers create high-performance tunable dielectrics using molecular beam epitaxy, overcoming material quality issues. The advancement enables adaptive electronic systems with potential applications in cellular communications and phased-array antennas.
Researchers at Notre Dame have identified a critical length scale marking the transition from zero-dimensional quantum dots to one-dimensional nanowires. The study provides new insights into the size- and shape-dependent properties of semiconductor nanostructures.
Researchers at McMaster University have developed a new method to isolate pure semiconducting carbon nanotubes from impurities. This breakthrough resolves a long-standing challenge in harnessing the potential of carbon nanotubes in electronics and computing.
A new method for making green LEDs has been developed by researchers at the University of Illinois, enhancing their efficiency and brightness. By creating gallium nitride (GaN) cubic crystals grown on a silicon substrate, the team has achieved powerful green light emission for advanced solid-state lighting.
Researchers at Berkeley Lab have developed a new method to predict material stability in semiconductors, crucial for creating efficient solar fuel generators. By analyzing bismuth vanadate, they found complex chemical instabilities that must be addressed to achieve stable performance.
Researchers at UT Dallas develop an affordable electronic nose using CMOS integrated circuits technology, allowing for breath analysis in various health diagnoses. The device can detect low levels of chemicals present in human breath with high specificity and sensitivity.
University of Utah researchers have developed a theory that adding light during the manufacturing process can reduce defects in semiconductors, leading to more efficient solar cells and brighter LED bulbs. This breakthrough could unlock the potential of materials previously deemed unusable, such as cadmium telluride and gallium nitride.
Researchers at Los Alamos National Laboratory discover a simple chemical treatment using hydrazine to dope electrons into semiconductors, creating one of the best hydrogen-evolution electrocatalysts. This breakthrough has wide potential applications in energy and electronics.
A new type of ultra-thin film can absorb almost 99% of light, revolutionizing night vision and sensing devices. This technology has the potential to save millions of dollars in defence and agriculture applications.
Researchers have developed a nanocavity that increases the amount of light absorbed by ultrathin semiconducting materials, enabling more efficient electronic devices. The technology has potential applications in creating flexible solar panels and faster photodetectors.
Scientists at Penn State University have developed a new high-pressure technique to create large-area thin-film silicon semiconductors at low temperatures in simple reactors. This approach could make large, flexible semiconductors more feasible for applications like flat-panel monitors and solar cells.
Researchers at NUS have developed a method to enhance the photoluminescence efficiency of tungsten diselenide, a two-dimensional semiconductor material. By incorporating gold plasmonic nanostructures, they achieved a 20,000-fold enhancement, paving the way for novel optoelectronic devices.
Researchers at NREL discovered a way to tune the Schottky barrier in 2D semiconductors using certain metals as electrodes. This adjustment reduces power losses and improves device performance by suppressing metal-induced gap states and Fermi level pinning effects.
Researchers developed a new n-type semiconducting polymer with superior electron mobility and oxidative stability, boosting charge transport in polymer semiconductors. The modified polymer formed a superstructure composed of polymer backbone crystals and side-chain crystals, resulting in high semicrystalline order.
The University of Bath has installed a new Nano-Lithography printing system, enabling the development of advanced manufacturing techniques for nano-engineered semiconductors. The system will accelerate research into high-efficiency LEDs and improve the quality of these materials.
Builders of future superconducting quantum computers may learn from semiconductors to simplify operation and improve qubits. Researchers found an efficient implementation using novel control approaches, eliminating costly overheads for control and reducing gate error rates.
Researchers induce self-photosensitization of M. thermoacetica with cadmium sulfide nanoparticles, enabling photosynthesis and synthesis of semiconductor nanoparticles for efficient solar-to-chemical production.
Researchers from NIST and IBM have created a 'self-assembly' method using gold nanoparticles that can carve straight channels into semiconductor surfaces. The process, discovered through trial and error, involves heating water vapor to etch nanoscale pits into the surface.
Scientists at PTB have successfully measured the anomalous velocity in a GaAs semiconductor with sub-picosecond time resolution, providing new insights into its microscopic origins and potential applications. The study enables the distinction between intrinsic and extrinsic contributions to the anomaly.
Researchers developed a nanostructured metal coating that lets light through without hindering electrical access, outperforming flat surfaces. The coating combines enhanced optical transmission with electrical contact, enabling higher-efficiency optoelectronic devices.
Scientists at NREL have developed a new probe to monitor the formation and decay of fields within photoelectrodes, enabling better understanding of their photophysics. This breakthrough could lead to improvements in the design of more efficient and stable photoelectrochemical cells for solar energy conversion.
Researchers demonstrate macroscopic entanglement generation at room temperature using infrared laser light and electromagnetic pulses. The technique has important implications for future quantum devices, including biological sensing inside living organisms and long-distance entangled states.
Researchers developed a method to detect small chromosomal deletions or duplications, such as Cri du Chat Syndrome and DiGeorge Syndrome, with a simple blood test. The new semiconductor sequencing platform can identify these abnormalities at an average gestational age of 24 weeks, reducing the need for invasive procedures.
Researchers at RIKEN have discovered that wrinkles in graphene can form a junction-like structure, changing its electronic properties from zero-gap conductor to semiconductor and back. By manipulating the carbon structure using scanning tunneling microscopy, they have opened up new possibilities for graphene engineering.
Researchers at Osaka University developed a new method for evaluating the quality of wide-gap semiconductors using terahertz waves. The laser terahertz emission microscope (LTEM) revealed correlations between defect density and THz wave emission, showing promise for next-generation energy-saving devices
Researchers at OIST have developed a method to increase efficiency of THz emission in gallium arsenide-based devices using femtosecond-laser-ablation. This technique improves the material's properties, leading to near 100% photon absorption and broader absorption bandwidth.
A team of researchers has achieved an unprecedented 14% efficiency in solar hydrogen production, breaking a 17-year-old record. The breakthrough involves a patented photo-electrochemical process that enhances long-term stability and boosts energy output.
Physicists at the University of Basel have created a new type of light source that emits identical single photons, a crucial step towards quantum information technology. The breakthrough uses a semiconductor quantum dot to control nuclear spin, allowing for indistinguishable photons.
The team used the Campanile probe to spectroscopically map nanoscale excited-state/relaxation processes in monolayer crystals of molybdenum disulfide, revealing significant optoelectronic heterogeneity. The discovery of an unexpected edge region with sulfur deficiency holds implications for future optoelectronic applications.
University of Wisconsin-Madison researchers have discovered a way to grow graphene nanoribbons directly on germanium semiconductor wafers, overcoming precision and edge quality issues. The technique enables the mass production of nanoribbons with desirable semiconducting properties for high-performance electronics.
Scientists created synthetic material from silicon that shows potential for improving soft tissue function and interface between electronic devices and biological tissues. The new method involves pressure modulation synthesis to promote the growth of silicon nanowires.
Researchers at Michigan State University have developed a new method to change the electronic properties of materials, enabling more efficient solid-state electronics. By using ultrafast laser pulses, they can create new electronic phases with desired properties.
Researchers at Stanford University have created an artificial crystal with a variable band gap using molybdenum disulfide, a material that can be stretched without breaking. This could lead to the development of more efficient solar cells that absorb energy from a broader spectrum of light.
Researchers discovered a promising material called thallium sulfide iodide that can be used to create high-performance, low-cost, and room-temperature semiconductor radiation detectors. The material has higher density, heavier chemical elements, and lower growth temperature compared to existing candidates.
Researchers at the University of Rochester have created optically active quantum dots in a 2D semiconductor, which could enable nanophotonics applications and integrated photonics. The defects on the atomically thin semiconductor emit single photons with correlated color and spin.