Articles tagged with Semiconductors
Researchers at Los Alamos National Laboratory discover a simple chemical treatment using hydrazine to dope electrons into semiconductors, creating one of the best hydrogen-evolution electrocatalysts. This breakthrough has wide potential applications in energy and electronics.
A new type of ultra-thin film can absorb almost 99% of light, revolutionizing night vision and sensing devices. This technology has the potential to save millions of dollars in defence and agriculture applications.
Researchers have developed a nanocavity that increases the amount of light absorbed by ultrathin semiconducting materials, enabling more efficient electronic devices. The technology has potential applications in creating flexible solar panels and faster photodetectors.
Scientists at Penn State University have developed a new high-pressure technique to create large-area thin-film silicon semiconductors at low temperatures in simple reactors. This approach could make large, flexible semiconductors more feasible for applications like flat-panel monitors and solar cells.
Researchers at NUS have developed a method to enhance the photoluminescence efficiency of tungsten diselenide, a two-dimensional semiconductor material. By incorporating gold plasmonic nanostructures, they achieved a 20,000-fold enhancement, paving the way for novel optoelectronic devices.
Researchers at NREL discovered a way to tune the Schottky barrier in 2D semiconductors using certain metals as electrodes. This adjustment reduces power losses and improves device performance by suppressing metal-induced gap states and Fermi level pinning effects.
Researchers developed a new n-type semiconducting polymer with superior electron mobility and oxidative stability, boosting charge transport in polymer semiconductors. The modified polymer formed a superstructure composed of polymer backbone crystals and side-chain crystals, resulting in high semicrystalline order.
The University of Bath has installed a new Nano-Lithography printing system, enabling the development of advanced manufacturing techniques for nano-engineered semiconductors. The system will accelerate research into high-efficiency LEDs and improve the quality of these materials.
Builders of future superconducting quantum computers may learn from semiconductors to simplify operation and improve qubits. Researchers found an efficient implementation using novel control approaches, eliminating costly overheads for control and reducing gate error rates.
Researchers induce self-photosensitization of M. thermoacetica with cadmium sulfide nanoparticles, enabling photosynthesis and synthesis of semiconductor nanoparticles for efficient solar-to-chemical production.
Researchers from NIST and IBM have created a 'self-assembly' method using gold nanoparticles that can carve straight channels into semiconductor surfaces. The process, discovered through trial and error, involves heating water vapor to etch nanoscale pits into the surface.
Scientists at PTB have successfully measured the anomalous velocity in a GaAs semiconductor with sub-picosecond time resolution, providing new insights into its microscopic origins and potential applications. The study enables the distinction between intrinsic and extrinsic contributions to the anomaly.
Researchers developed a nanostructured metal coating that lets light through without hindering electrical access, outperforming flat surfaces. The coating combines enhanced optical transmission with electrical contact, enabling higher-efficiency optoelectronic devices.
Scientists at NREL have developed a new probe to monitor the formation and decay of fields within photoelectrodes, enabling better understanding of their photophysics. This breakthrough could lead to improvements in the design of more efficient and stable photoelectrochemical cells for solar energy conversion.
Researchers demonstrate macroscopic entanglement generation at room temperature using infrared laser light and electromagnetic pulses. The technique has important implications for future quantum devices, including biological sensing inside living organisms and long-distance entangled states.
Researchers developed a method to detect small chromosomal deletions or duplications, such as Cri du Chat Syndrome and DiGeorge Syndrome, with a simple blood test. The new semiconductor sequencing platform can identify these abnormalities at an average gestational age of 24 weeks, reducing the need for invasive procedures.
Researchers at RIKEN have discovered that wrinkles in graphene can form a junction-like structure, changing its electronic properties from zero-gap conductor to semiconductor and back. By manipulating the carbon structure using scanning tunneling microscopy, they have opened up new possibilities for graphene engineering.
Researchers at Osaka University developed a new method for evaluating the quality of wide-gap semiconductors using terahertz waves. The laser terahertz emission microscope (LTEM) revealed correlations between defect density and THz wave emission, showing promise for next-generation energy-saving devices
Researchers at OIST have developed a method to increase efficiency of THz emission in gallium arsenide-based devices using femtosecond-laser-ablation. This technique improves the material's properties, leading to near 100% photon absorption and broader absorption bandwidth.
A team of researchers has achieved an unprecedented 14% efficiency in solar hydrogen production, breaking a 17-year-old record. The breakthrough involves a patented photo-electrochemical process that enhances long-term stability and boosts energy output.
Physicists at the University of Basel have created a new type of light source that emits identical single photons, a crucial step towards quantum information technology. The breakthrough uses a semiconductor quantum dot to control nuclear spin, allowing for indistinguishable photons.
The team used the Campanile probe to spectroscopically map nanoscale excited-state/relaxation processes in monolayer crystals of molybdenum disulfide, revealing significant optoelectronic heterogeneity. The discovery of an unexpected edge region with sulfur deficiency holds implications for future optoelectronic applications.
University of Wisconsin-Madison researchers have discovered a way to grow graphene nanoribbons directly on germanium semiconductor wafers, overcoming precision and edge quality issues. The technique enables the mass production of nanoribbons with desirable semiconducting properties for high-performance electronics.
Scientists created synthetic material from silicon that shows potential for improving soft tissue function and interface between electronic devices and biological tissues. The new method involves pressure modulation synthesis to promote the growth of silicon nanowires.
Researchers at Michigan State University have developed a new method to change the electronic properties of materials, enabling more efficient solid-state electronics. By using ultrafast laser pulses, they can create new electronic phases with desired properties.
Researchers at Stanford University have created an artificial crystal with a variable band gap using molybdenum disulfide, a material that can be stretched without breaking. This could lead to the development of more efficient solar cells that absorb energy from a broader spectrum of light.
Researchers discovered a promising material called thallium sulfide iodide that can be used to create high-performance, low-cost, and room-temperature semiconductor radiation detectors. The material has higher density, heavier chemical elements, and lower growth temperature compared to existing candidates.
Researchers at the University of Rochester have created optically active quantum dots in a 2D semiconductor, which could enable nanophotonics applications and integrated photonics. The defects on the atomically thin semiconductor emit single photons with correlated color and spin.
Researchers at Brown University have developed a method to create pure, p-type semiconductors from silicon telluride, which could be used in various electronic and optical devices. The materials can take up lithium and magnesium, making them suitable for battery electrodes.
Cardiff University has received a $25.8m investment to establish the UK's first Compound Semiconductor Research Foundation, set to drive innovation in semiconductor technology. The foundation will strengthen partnerships between the university and IQE Plc, a leading global Compound Semiconductor wafer supplier.
Researchers at Goethe University have successfully synthesised a silicon dodecahedron, a structurally similar compound to C60. The molecule features an Si20 Platonic solid and opens up new possibilities for the semiconductor industry.
A Kansas State University chemical engineer has developed a patented process to build better semiconductors, minimizing defects that can degrade device efficiency. The research uses off-axis silicon carbide substrates, which have been shown to have fewer defects than standard substrates.
Engineers at UT Dallas have created a semiconductor technology that can detect electromagnetic waves to create images at nearly 10 terahertz, making night vision and heat-based imaging more accessible. This breakthrough could enable various applications such as animal tracking, intruder detection, and building inspection.
A team of researchers from the University of Cincinnati has made a breakthrough in developing a new type of plasmonic device that can process data using light waves. The device has the potential to make electronics faster, cheaper and more sustainable by reducing heat and power consumption.
Researchers at Aalto University have developed a new method to combine different types of nanowires into a single array, improving absorption efficiency. The dual-type nanowire arrays show better light coupling and reduced reflection, making them suitable for applications such as solar cells and LEDs.
A new semiconductor compound is bringing fresh momentum to the field of spintronics, an emerging breed of computing device that may lead to smaller, faster, less power-hungry electronics. The compound's unique low-symmetry crystal structure offers much greater flexibility, enabling precise control over conductivity and magnetism.
Research from Griffith University demonstrates silicon carbide's superiority as a semiconductor for high-performance sensors in various industries, including mining and aerospace. The compound's unique electronic structure provides mechanical strength, chemical inertness, thermal durability, and electrical stability.
Researchers at ETH Zurich developed a physical model explaining electron transport in nanocrystal solar cells, which could lead to improved efficiency. The model reveals that nanocrystal size can be controlled to optimize absorption of sunlight, enabling the creation of flexible and thin solar cells with higher performance.
Complex 3D micro/nanostructures are crucial in biology, and researchers have created a simple route to form these structures by exploiting mechanics principles. The process involves using a pre-strained elastomer substrate to induce buckling processes that transform planar materials into well-defined, 3D frameworks.
Researchers at Berkeley Lab have observed piezoelectricity in a free-standing single layer of molybdenum disulfide, a potential successor to silicon. The discovery has the potential to lead to tunable piezo-materials and devices for extremely small force generation and sensing.
Researchers from Leibniz University Hannover and PTB have successfully demonstrated the on-demand emission of electron pairs from a semiconductor quantum dot. The resulting electron pairs were found to be spatially separated with over 90% efficiency, a crucial step towards future applications such as quantum computing and cryptography.
Researchers at North Carolina State University have developed a new transfer technique for atomic-layer semiconducting thin films, allowing for faster and damage-free transfer onto flexible substrates. The technique uses room-temperature water, a tissue, and tweezers to transfer MoS2 films up to 5 centimeters in diameter.
Researchers designed microwave circuits that can transmit high-frequency signals with sufficient power, paving the way for faster wireless data transmission. They aim to demonstrate 100 Gigabit per second wireless data transfer within a few years.
The NSF/SRC STARSS program aims to reduce the likelihood of unintended behavior in semiconductors. Researchers will focus on strategies and tools for authentication throughout the supply chain and in the field.
Researchers have discovered a way to control the properties of quantum dots by using ultrathin layers of metal oxides. This new approach makes quantum dots glow brighter and enhances their emission efficiency, which is crucial for applications such as sensors, light-emitting diodes, and solar cells.
A hybrid form of perovskite has been used to make high-brightness LEDs with a simple and scalable process, potentially replacing conventional methods. The results could provide a lot of value to the flat-panel display industry.
Scientists have designed a new material that could enable superconductivity at temperatures rivaling those seen in cuprates, potentially paving the way for more practical applications. The proposed design features layers of semiconductor compounds separated by insulator spacers, which would create indirect excitons that become superflu...
Researchers have developed a new ultrafast imaging technique using multi-wavelength lasers to overcome the limitations of traditional imaging systems. This breakthrough enables real-time optical imaging with high resolution and fast frame rates.
Scientists successfully integrated compound semiconductor crystals made of indium arsenide into silicon nanowires, overcoming a major obstacle in chip technology. The production method, which involves ion implantation and heat treatment, enables the creation of 'hetero-nanowires' with improved performance.
Researchers developed an ab initio method to study hot carriers in semiconductors, providing data for hot carrier dynamics in silicon and other materials. The method found that thermalization under solar illumination is completed within 350 femtoseconds, dominated by phonon emission from hot carriers.
Researchers at TUM and UT Austin developed nonlinear mirrors that reflect frequency-doubled output using input light intensity as small as a laser pointer. The new materials produce approximately one million times higher intensity of frequency-doubled output compared to traditional materials.
Gila Stein, a University of Houston chemical engineer, received an NSF grant to build models explaining lithography systems used for device fabrication. Her research focuses on chemically amplified resists, which are crucial for patterning semiconductor devices in smaller sizes.
Researchers at JCAP devise a method to protect common semiconductors like silicon and gallium arsenide from corrosion in solar-fuel generators. They use a process called atomic layer deposition to form a protective layer of titanium dioxide, allowing the materials to absorb light efficiently while preventing corrosion.
A team of chemists at UC Riverside proposes a new model explaining the promoting effect in photocatalysis, suggesting that excited electrons promote hydrogen reduction on the semiconductor surface rather than transferring to metals. This radical approach could lead to the development of more economical and efficient photocatalysts.
Researchers have made breakthroughs in developing flexible and stretchable electronic materials that can conform to non-planar surfaces without wrinkling. These materials have potential applications in energy harvesting, biomedical devices, wearable electronics, and consumer electronics.
Researchers have demonstrated that the distribution of dopants in semiconductor nanocrystals is crucial for controlling optical properties. By probing electron distribution using x-ray photoelectron spectroscopy, they found that surface-doped samples exhibit reduced activation of dopants and symmetric plasmon resonances.
Researchers at the University of Illinois developed multilayer, microscale solar cells that can operate across the entire solar spectrum at exceptionally high efficiency. The technology enables quadruple-junction four-terminal solar cells with individually measured efficiencies of 43.9 percent.
Researchers have discovered a way to use existing semiconductors to detect a wider range of light, including infrared. This technology allows for improved detectors and solar cells that can absorb infrared light.
Researchers in China have developed a convenient way to selectively prepare germanium sulfide nanostructures, including nanosheets and nanowires. These nanostructures show outstanding photoresponsive behavior, indicating their potential use in solar energy conversion systems and optoelectronics.
Researchers discovered a unique new two-dimensional semiconductor, rhenium disulfide, with direct-bandgap properties. The material's weak interlayer coupling makes it ideal for studying 2D physics and applications in tribology, solar cells, and valleytronics.