Add BrightSurf on Google Email

Physics origin of universal unusual magnetoresistance

Researchers provide experimental evidence for universal unusual magnetoresistance, attributing it to interfacial electron scattering governed by magnetization and electric field. The two-vector magnetoresistance model offers a unified framework for understanding magnetoresistance in diverse spintronic systems.

SourceScience China Press·JournalNational Science Review·DateSep 2, 2025

No spin, no catalysis

Researchers have designed a novel single-atom ruthenium-doped Co3O4 catalyst that significantly promotes water splitting efficiency. The high-spin Co3+ species facilitate robust OH* adsorption and enhance the supply of H* intermediates, accelerating the Volmer–Tafel pathway of the hydrogen evolution reaction.

SourceScience China Press·JournalScience Bulletin·TypeExperimental study·DateAug 14, 2025

New research fuels the future of data storage: Predicting spin accumulation for faster, greener memory

Researchers from The University of Osaka develop a new program to calculate the spin accumulation coefficient, providing a definitive measure of the spin Hall effect and overcoming ambiguities. This advancement enables accurate predictions for real materials, accelerating the development of advanced spintronic technologies.

SourceThe University of Osaka·Journalnpj Spintronics·TypeComputational simulation/modeling·DateJul 22, 2025

Research team produces low-loss spin waveguide network

A research team from the University of Münster has developed a new way to produce spin waveguides, allowing for large networks capable of processing information efficiently. The team created the largest spin waveguide network to date, with precise control over properties such as wavelength and reflection.

SourceUniversity of Münster·JournalNature Materials·TypeExperimental study·DateJul 10, 2025

Exploiting the full potential of multiferroic materials for magnetic memory devices

Researchers demonstrate a new strategy for magnetization reversal in multiferroic materials, allowing for more energy-efficient electronics. The study achieves this breakthrough by growing thin films in an unconventional crystallographic orientation, enabling the application of electric fields perpendicular to the film surface.

SourceInstitute of Science Tokyo·JournalAdvanced Materials·TypeExperimental study·DateMay 30, 2025

Achieving a record-high Curie temperature in ferromagnetic semiconductor

Scientists develop high-quality (Ga,Fe)Sb ferromagnetic semiconductor with a record-high Curie temperature of up to 530 K, exceeding previous limits and enabling stable operation at room temperature. The material exhibits excellent crystallinity and superior magnetic properties, making it suitable for spintronics applications.

SourceInstitute of Science Tokyo·JournalApplied Physics Letters·TypeExperimental study·DateMay 21, 2025

Scientists discover one of the world’s thinnest semiconductor junctions forming inside a quantum material

Researchers at University of Chicago Pritzker School of Molecular Engineering discovered one of the world's thinnest semiconductor junctions within a quantum material. The discovery could lead to ultra-miniaturized electronic components and provides insight into electron behavior in materials designed for quantum applications.

SourceUniversity of Chicago·JournalNanoscale·DateMay 20, 2025

Groundbreaking study reveals small polaron effect in Dion-Jacobson 2D lead halide perovskites, enhancing spin lifetime and optoelectronic performance

The study discovered a giant deformation potential of 123 eV, leading to exceptionally long polarization response times and enhanced spin lifetimes. Small polaron formation was confirmed through various techniques, including optical Kerr spectroscopy, X-ray diffraction, and phonon dynamics.

SourceScience China Press·JournalNational Science Review·TypeObservational study·DateMar 13, 2025

Development of a high-performance AI device utilizing ion-controlled spin wave interference in magnetic materials

Researchers at NIMS developed a next-generation AI device leveraging ion-controlled spin wave interference in magnetic materials, outperforming conventional devices by up to 10 times. The technology enables energy-efficient computations with minimal degradation when miniaturized, opening doors for various industrial applications.

SourceNational Institute for Materials Science, Japan·JournalAdvanced Science·TypeExperimental study·DateJan 17, 2025

‘Brand new physics’ for next generation spintronics

Researchers at the University of Utah and UCI have discovered a unique quantum behavior that allows for the manipulation of electron-spin and magnetization through electrical currents. This phenomenon, dubbed anomalous Hall torque, has potential applications in neuromorphic computing.

SourceUniversity of Utah·JournalNature Nanotechnology·TypeExperimental study·DateJan 16, 2025

Spintronics memory innovation: A new perpendicular magnetized film

A new cobalt-manganese-iron alloy thin film demonstrates high perpendicular magnetic anisotropy, a key aspect for fabricating MRAM devices using spintronics. This breakthrough offers a new candidate for memory materials and contributes to the development of novel spintronics memory devices.

SourceAdvanced Institute for Materials Research (AIMR), Tohoku University·JournalScience and Technology of Advanced Materials·DateDec 26, 2024

Observation of new electric field signals strong potential for assorted devices: new research at City University of Hong Kong

Researchers at City University of Hong Kong have observed a new vortex electric field with the potential to enhance electronic, magnetic and optical devices. The discovery enables the creation of quasicrystals with versatile applications in memory stability, computing speed, spintronics and sensing devices.

Physicists develop new method to visualize magnetic nanostructures with high resolution

Researchers at Martin Luther University Halle-Wittenberg have developed a new method to visualize magnetic nanostructures with a resolution of around 70 nanometres. This breakthrough enables the analysis of spintronic components and has significant implications for energy-efficient storage technologies.

SourceMartin-Luther-Universität Halle-Wittenberg·JournalACS Nano·TypeExperimental study·DateNov 20, 2024

Spin current observations from organic semiconductor side

A team at Osaka Metropolitan University has designed a multilayer device to investigate spin currents, using an organic semiconductor material with a long spin relaxation time. This allows direct observation of phenomena due to spin current generation and enables researchers to gain deeper insights into the properties of spin currents.

SourceOsaka Metropolitan University·JournalAdvanced Electronic Materials·TypeExperimental study·DateOct 30, 2024

Discovery of orbital angular momentum monopoles enables orbital electronics with chiral materials

Researchers at the Max Planck Institute have made a groundbreaking discovery in chiral materials, enabling the creation of orbital electronics. The study reveals that certain materials naturally possess orbital angular momentum monopoles, which can be harnessed for memory devices and other applications.

SourceMax-Planck-Institut für Mikrostrukturphysik·JournalNature Physics·TypeExperimental study·DateOct 1, 2024

“Fussy” molecules prefer one direction over the other

Scientists from Osaka University have created a new class of materials, called chiral bifacial indacenodithiophene-based π-conjugated polymers, that can selectively interact with electrical currents in different polarities. These films exhibit strong spin polarization, making them promising for applications in spintronics and clean ene...

SourceOsaka University·JournalChemical Communications·TypeExperimental study·DateSep 11, 2024

Metamaterials for the data highway

Scientists from HZDR, TU Chemnitz, TU Dresden, and Forschungszentrum Jülich have demonstrated the storage of entire bit sequences in cylindrical domains. The team's findings could lead to novel types of data storage and sensors, including magnetic variants of neural networks.

SourceHelmholtz-Zentrum Dresden-Rossendorf·JournalAdvanced Electronic Materials·TypeExperimental study·DateJul 16, 2024

New approach to identifying altermagnetic materials

Researchers developed a new method to identify altermagnets using X-ray magnetic circular dichroism (XMCD) and theoretically predicted its fingerprint. The approach was successfully applied to manganese telluride (α-MnTe), revealing the material's hidden fingerprint of altermagnetism, which could accelerate spintronics applications.

SourceOsaka Metropolitan University·JournalPhysical Review Letters·TypeComputational simulation/modeling·DateJun 14, 2024