Articles tagged with Spintronics
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Researchers have successfully demonstrated a strong exchange coupling of thin ferromagnetic layers to the antiferromagnetic compound Mn2Au, enabling large magnetoresistance effects. This breakthrough enables the use of well-established read-out methods in antiferromagnetic spintronics.
Researchers have successfully manipulated a single skyrmion, a tiny magnetic vortex, at room temperature using pulses of electric current. The team used Lorentz transmission electron microscopy to track the motion of the skyrmion and control its direction with ultrafast pulses of electricity.
Researchers discovered a new topological magnet that can induce a billion-fold change in resistance by rotating the magnetic field angle. This phenomenon, called colossal angular magnetoresistance, enables efficient detection of electronic spin states and opens up new opportunities for spin-electronic applications.
A RMIT-led collaboration demonstrates large in-plane anisotropic magnetoresistance (AMR) in monolayer WTe2, a quantum spin Hall insulator. The team successfully fabricates devices and observes typical transport behaviors, showing promise for future low-energy electronics.
Researchers from Germany and Spain successfully create a uniform two-dimensional material with exotic ferromagnetic behavior known as easy-plane magnetism. This discovery opens up new possibilities for spintronics, a technology that uses magnetic moments instead of electrical charges.
Researchers developed a novel spintronic-metasurface terahertz emitter that generates broadband, circularly polarized, and coherent terahertz waves. The design offers flexible manipulation of the polarization state and helicity with magnetic fields, enabling efficient generation and control of chiral terahertz waves.
The study reveals that the interaction between phonons and electrons is crucial for ultrafast demagnetization. The data show a temperature threshold below which this mechanism does not occur, indicating another microscopic mechanism at lower temperatures.
Researchers have found a way to stabilize the novel quantum effect in graphene at room temperature, which could lead to breakthroughs in data storage and computer components. The discovery was made using standard microfabrication techniques and showed that the material can generate its own magnetic field.
Researchers have developed a device that uses two-dimensional hybrid metal halides to control terahertz radiation, outperforming conventional emitters in signal efficiency and cost. The 2D hybrid metal halide device is also thinner, lighter, and more robust than traditional terahertz generators.
Researchers develop a new method to perform logic operations more efficiently and reliably using magnonics. Nanostructured antiferromagnetic wires are well-suited for this purpose, enabling quick and low-energy computation.
The study explores chromium oxides, magnetic compounds used in old tapes, and finds that adding oxygen atoms increases metallic properties. This allows for precise control over electrical conductance, enabling the design of molecular-sized components with vast processing and storage capacities.
Researchers have developed a new approach to generating terahertz radiation, which can be directly generated on an electronic chip. This breakthrough enables the use of terahertz radiation in various applications, including materials science and communications technology.
Researchers at DTU have developed a new method for designing nanomaterials with unprecedented precision, allowing for the creation of compact and electrically tunable metalenses. This breakthrough enables the development of high-speed communication and biotechnology applications.
Researchers explore joining topological insulators with magnetic materials to achieve quantum anomalous Hall effect, promising building blocks for low-power electronics. The 'cocktail' approach allows tuning of both magnetism and topology in individual materials, enabling operation closer to room temperature.
Scientists have demonstrated a new way to control magnetic domain wall motions in thin film materials by combining two magnetic effects. This breakthrough could lead to the development of ultrafast, ultrasmall, and power-efficient devices using spintronics.
Researchers from Shinshu University have successfully confined and protected magnetic skyrmions using patterns of modified magnetic properties. This method offers a promising approach for building reliable channels for confinement, accumulation, and transport of skyrmions as information carriers.
A RMIT-led international collaboration has achieved record-high electron doping in a layered ferromagnet, causing magnetic phase transition with significant promise for future electronics. Ultra-high-charge, doping-induced magnetic phase transition in Fe5Ge2 enables promising applications in antiferromagnetic spintronic devices.
A Chinese-Australia collaboration successfully induced Dzyaloshinskii-Moriya interactions (DMI) in TaS2 by intercalating iron atoms, which can be further tuned by gate-induced proton intercalation. This enables electrical control of chiral spin textures and potential applications in energy-efficient spintronic devices.
A University of Minnesota-led study found that magnetoelastic coupling is a significant contributor to energy loss in spintronic materials. This discovery could lead to the development of ultralow-damping materials for more efficient computing and data storage devices.
Researchers found that electrons' spin has a significantly greater influence on spintronic effects than previously thought. The study also discovered the orbital moment's contribution to the Edelstein effect, increasing efficiency by at least one order of magnitude.
Scientists at Tohoku University and Japan Atomic Energy Agency found a persistent rotation of chiral-spin structure in a non-collinear antiferromagnet Mn3Sn thin film. The rotation can be tuned by applied current, offering opportunities for applications like oscillators and random number generators.
Researchers at Tohoku University and NUS developed an array of electrically connected spintronic devices that can harvest a 2.4 GHz wireless signal to power small electronic devices and sensors. The technology overcomes the challenge of synchronizing multiple magnetic tunnel junctions, enabling efficient energy harvesting.
Scientists at DGIST have discovered a novel way to control the alignment of magnetic atoms within antiferromagnetic materials using mechanical vibration and a magnetic field. This process replaces traditional heating and cooling methods, enabling more precise control over magnetic spins in spintronics devices.
Scientists have created elements comparable to brain neurons and synapses using spins, a magnetic property of electrons. This breakthrough could lead to the development of brain-like computer hardware that can interface with standard silicon-based circuits.
Researchers discovered Zeeman spin-orbit coupling in two different materials, demonstrating its generic nature and opening possibilities for spin manipulation. This breakthrough may lead to the development of fundamentally new electronic devices with high storage density and fast operation.
Researchers at Aalto University developed a new device for spintronics, allowing control and filtering of spin waves in devices as small as hundreds of nanometres. The device uses exotic magnetic materials to trap and cancel out unwanted frequencies, enabling faster processing and wireless transmission.
Scientists have constructed a semiconductor component that allows for efficient information exchange between electron spin and light at room temperature. The new method uses an opto-spintronic nanostructure with quantum dots to control the electron spin of the nanoscale regions, achieving higher spin polarization than previous research.
Researchers found two distinct magnetic phase transitions in PbFeO3, including a continuous spin reorientation at 418K and a weak ferromagnetic transition at 600K, which could enable the development of faster and more efficient spintronic devices.
Scientists from Japan's Institute for Molecular Science have created a new recipe for stable radical-based coordination polymers, which have potential applications in electronics and spintronics. The materials exhibit photoluminescence properties and can be produced using different metal ions or complexes.
Researchers induced artificial magnetic texture in nonmagnetic graphene by pairing it with a magnet, overcoming a long-standing obstacle in the field of spintronics. The findings have potential to revolutionize electronics and enable more powerful semiconductors, quantum computers, and other devices.
Researchers create a new platform for valleytronics by combining ferromagnets and twisted graphene layers, enabling the manipulation of electrons' 'valley' property. This opens up a new realm of correlated twisted valleytronics with potential applications in topological quantum computing.
Scientists have created a new material, a higher-order topological insulator, which confines electrons to one dimension, enabling the creation of ultra-high-speed and low-power devices. This innovation has significant implications for spintronics, a field that may replace traditional electronic systems in the future.
Scientists from the University of Groningen have shown that nonlinear effects can be achieved using 2D boron nitride, enabling spin signals to multiply and be measured without ferromagnets. This technology has potential applications in neuromorphic computing and spin-based electronics.
Researchers found that damping-like torque, previously thought to be small, can dominate spin reorientation in antiferromagnetic materials. This discovery could lead to efficient spin manipulation and ultrafast switching in spintronics devices.
A UNSW study demonstrates all-electrical spin-to-charge conversion without magnetic field, enabling fast detection of spin accumulation in strongly spin-orbit coupled materials. The non-linear method facilitates orders of magnitude faster detection and time-resolved read-out down to 1 nanosecond resolution.
Researchers have developed a gallium arsenide-based ferromagnetic semiconductor that can act as memory by quickly switching its magnetic state in the presence of an induced current. The new material suppresses instability and lowers power consumption, offering highly efficient memory.
Researchers have developed an all-solid redox transistor containing a thin film of Fe3O4 on magnesium oxide and lithium silicate electrolyte, enabling reversible rotation of the magnetization angle in magnetite at room temperature. The device operates with lower power consumption than traditional spin current injection methods.
Researchers at Tohoku University successfully demonstrated current-induced switching in a polycrystalline metallic antiferromagnetic heterostructure with high thermal stability. This breakthrough enables potential applications in future electronic device development.
Scientists at Linköping University develop a lead-free magnetic double perovskite with interesting optoelectronic properties, opening the possibility of coupling spintronics with optoelectronics. The new material exhibits a magnetic response at temperatures below 30 K.
Researchers studied Germanium telluride crystals at the nanoscale to understand its ferroelectric properties and their potential applications in non-volatile spintronic devices. The study found two distinct types of boundaries surrounding ferroelectric nanodomains with sizes between 10 to 100 nanometres.
A team of researchers has developed a new technique for magnetization switching in spintronic devices, nearly 100 times faster than current state-of-the-art methods. The breakthrough could lead to the development of ultrafast magnetic memory for computer chips that retain data even when power is off.
A team of scientists successfully fabricated a giant magnetoresistive device comprising single-crystal Heusler alloys on a practical silicon substrate. The device performs comparably to the one grown on a heat-resistant MgO substrate, overcoming challenges in high-performance magnetoresistive devices.
Scientists at Mainz University prove that information can be stored electrically in antiferromagnetic materials. By using currents instead of magnetic fields, they improve the efficiency of writing operations, paving the way for applications such as smart cards and ultrafast computers.
Researchers have developed a new type of magnetic tunnel junction with four resistance states, enabling the creation of multi-level memory devices and neuromorphic memory. This breakthrough paves the way for more efficient spintronics devices.
Researchers from Russia and Spain propose a new model that describes electron spin behavior in semiconductor nanowires, enabling quick spin flip with controlled electric fields. The findings suggest that optimal interval of control fields is necessary to avoid losing valuable information.
Researchers at Tohoku University and the University of Gothenburg developed a novel voltage-controlled spintronic oscillator capable of closely imitating non-linear oscillatory neural networks. The technology allows for strong tuning with negligible energy consumption, enabling efficient training of large neural networks.
Researchers at the University of Basel developed a new technique for efficient control and detection of electron spins in semiconductor devices. The spin valves can be controlled individually using nanomagnets, allowing for precise determination of electron spin orientation.
Researchers at Bar-Ilan University have developed a structure that can support exponentially many discrete magnetic states, opening the door to ultra-high-density magnetic memory and novel computing applications.
Scientists at Tokyo University of Science synthesized a compound that may be key to understanding the elusive quantum spin liquid (QSL) state. The QSL state is characterized by disordered spins, similar to molecules in liquid water but unlike crystalline ice.
Scientists have discovered a revolutionary method to transfer and amplify pure spin current using thin layers of antiferromagnetic NiO. This breakthrough could lead to significant advancements in high-speed, energy-efficient data technology.
Spin-gapless semiconductors (SGSs) bridge zero-gap materials and half-metals, exhibiting fully spin-polarized electrons and holes. Dirac type SGSs show extremely high electron mobility, enabling dissipationless edge states for ultra-fast electronics.
Researchers have made significant advancements in graphene spintronics, enabling the efficient creation, transport, and detection of spin information. This field holds promise for applications in quantum computation, space communication, and high-speed radio links.
Scientists create vertical spin valves using 2D van der Waals materials, eliminating the need for a spacer layer. The devices exhibit low resistance-area products and low operating current densities, making them suitable for future spintronics applications.
A team of physicists at the University of Arizona discovered a thin layer of iron oxide that explains a long-standing puzzle in magnetic tunnel junctions, which could lead to faster and more efficient spintronics. The finding opens up new possibilities for developing this technology, potentially revolutionizing computing.
The study demonstrates that nanoscale magnetic gyroids can adopt a large number of stable states, exhibiting ferromagnetic behavior without a unique equilibrium configuration. The findings establish gyroids as a candidate system for research into unconventional information processing and emergent phenomena relevant to spintronics.
Researchers at Spintec Laboratory and CNRS/Thales Laboratory developed a non-magnetic system to detect spin information at low power. This breakthrough enables the creation of ferroelectricity-based spintronic devices that consume significantly less energy than traditional systems.
Researchers have found a unique connection between magnetic properties and atomic dynamics in troilite, which could enable new technologies such as spintronic computing. The material's transition into a magnet controls instabilities in its crystalline structure, causing it to change from a conductor to an insulator.
A new research project called SpinAge aims to develop a neuromorphic computer system that can mimic the human brain's synapses and neurons, increasing computer performance by up to 100,000 times. The project, coordinated by Aarhus University, seeks to reduce energy consumption in current computing systems by at least a factor of 100.
Researchers at KIST have successfully controlled the magnetic properties of FGT, a material with potential for next-generation spintronic semiconductors. The discovery could accelerate the development of devices that operate 100 times faster than current silicon-based electronic devices.
Researchers have found that non-encapsulated few-layer CrI3 has a rhombohedral structure at low temperatures, contradicting previous findings. The study also shows spin-phonon coupling occurring below 60K, which affects the Hamiltonian of Raman modes and has potential implications for novel spintronic devices