Articles tagged with Transistors
Researchers have created a new type of semiconductor technology based on two-dimensional nanocrystals, which can be used to create smaller transistors. The material has a bandgap, allowing it to switch on and off, making it suitable for digital transistors.
Researchers at Ohio State University have developed a new material called germanane, which conducts electrons five times faster than conventional germanium. This discovery has the potential to advance future electronics and improve computer chip performance.
McGill researchers demonstrate ability to modulate light using laser-pulse inputs to manipulate quantum mechanical state of semiconductor nanocrystals. This breakthrough could lead to the development of optical transistors, which would enable faster and more efficient data processing in telecommunications networks.
A team of Stanford University bioengineers has created a biological transistor made from genetic material that can compute inside living cells, recording exposure to external stimuli or environmental factors. The transcriptor enables amplifying genetic logic, allowing engineers to monitor environments and improve cellular therapeutics.
A team of researchers led by Case Western Reserve University is investigating a new material that can operate at extremely high temperatures without cooling. They aim to develop heat-tolerant electronics with the potential to withstand over 200 degrees Celsius, benefiting industries such as aerospace and automotive.
The University of Notre Dame has been selected to lead the Center for Low Energy Systems Technology (LEAST), a $6 million research center funded by DARPA and SRC. The center aims to develop new devices that consume less energy, which will enable the creation of smaller and faster computer chips.
The new device boasts twice as fast 'carry mobility' as previous experimental p-type transistors and almost four times as fast as commercial ones. It features a trigate design, which could solve problems at extremely small sizes, and is made from germanium.
Researchers at MIT develop the smallest indium gallium arsenide transistor, promising to replace silicon in computing devices. The tiny transistor performs well despite being just 22 nanometers in length.
Researchers have created a new type of transistor called the '4-D' transistor, made from indium-gallium-arsenide material. The three nanowires in the device allow for faster and more efficient operation, enabling the development of lighter laptops with reduced heat generation.
Researchers at MIT have successfully produced complex electronic components from molybdenum disulfide, a material that naturally comes with a bandgap and could enable new products such as glowing walls, clothing with embedded electronics, and glasses with built-in display screens. The discovery opens up a new realm of research on two-d...
Researchers at RIKEN have created a new transistor that uses electrostatic accumulation of charge on a strongly-correlated material to trigger bulk switching of electronic state. The device operates at room temperature and requires only 1V to switch the material from an insulator to a metal.
Researchers at Tel Aviv University developed a carbon-based memory transistor that can store and transfer energy, eliminating the need for capacitors. This technology aims to address RAM limitations and power consumption in mobile devices, enabling faster performance and longer battery life.
Pitt researchers suggest a vacuum-based approach to overcome the limits of conventional silicon-based semiconductor electronics. They found that electrons trapped in a semiconductor can be extracted into air, enabling low-power and high-speed transistors.
Researchers at Linköping University have developed the first chemical circuit, combining ion transistors to control and transport ions and charged biomolecules. This breakthrough enables chemical control of muscles and signaling systems in the human body, with potential applications for treating diseases.
Researchers developed a tiny vacuum channel transistor with applications in hazardous sensing, medical diagnostics, and telecommunications; the device operates at low voltages, making it competitive with semiconductor technology.
Scientists at Linköping University have developed a method to precisely control the threshold voltage of plastic transistors, a crucial property for their use in logic circuits. By modifying the gate electrode material, they were able to reduce the threshold voltage by up to 0.9V.
A group of researchers at the University of California, Riverside developed a technique to lower hot spots in GaN transistors by introducing graphene multilayers, increasing device lifetime by a factor of 10. The new approach represents a transformative change in thermal management.
Researchers developed a new X-ray technique to analyze the molecular structure of organic polymers used in printable electronics. They found that molecular alignment is crucial for device performance, particularly in transistors and solar cells.
Researchers have developed a simple and effective approach to reduce the threshold voltage of pentacene thin film transistors, while maintaining high mobility. By inserting a thin metal phthalocyanine interlayer, they achieved significant performance enhancement, including reduced threshold voltage and increased carrier mobility.
Researchers at Tel Aviv University have created protein-based transistors using organic materials found in the human body, offering a biodegradable alternative to traditional silicon-based technology. The transistors are self-assembling and can be tailored for unique properties such as conductivity, memory storage, and fluorescence.
Researchers at University of New South Wales create perfect single-atom transistor for unparalleled computational efficiency, marking significant step towards quantum computer development. The device's precise accuracy and electronic characteristics match theoretical predictions, paving the way for future technological innovations.
Researchers at the University of Manchester have created a transistor that may prove graphene's potential as the next silicon for computer chips. The new device uses a vertical direction and exploits graphene's unique features to overcome current leakage issues.
Researchers develop cost-effective technique for fabricating flexible and stretchable backplanes using semiconductor-enriched carbon nanotube solutions. The technology enables the creation of artificial electronic skin capable of detecting and responding to touch.
Researchers at Purdue University have created a new type of transistor with a 3-D structure, potentially leading to faster, lighter laptops. The transistors contain nanowires made from indium-gallium-arsenide and have the potential to conduct electrons five times faster than silicon.
Researchers have successfully created a molybdenite microchip, demonstrating its potential as an alternative to silicon. The chip is smaller, more efficient, and flexible than traditional silicon-based electronics.
Researchers at UCLA have developed a method to print carbon nanotube transistor circuits using ink-jet printing, which can be used in display devices such as cell phones and digital cameras. The new technology has shown significant performance advantages over traditional organic-based printed electronics.
Researchers demonstrate graphene-based transistor array compatible with living cells, recording electrical signals generated by individual nerve cells. The platform shows potential for future bioelectronic applications, including brain-eye-ear implants to compensate for neural damage.
The new chip can simulate the activity of a single brain synapse and capture intracellular processes that underlie many brain functions, including learning and memory. It represents a significant advance in modeling neural functions and could be used to build systems for neural prosthetic devices and artificial intelligence devices.
A KAIST research team has developed a fully functional flexible non-volatile resistive random access memory (RRAM) that can be randomly accessed, written, and erased on a plastic substrate. This breakthrough overcomes cell-to-cell interference issues by integrating a memristor with high-performance silicon transistors.
Researchers at Purdue University have developed a new type of computer memory called FeTRAM, which combines silicon nanowires with a ferroelectric polymer. This technology has the potential to use 99% less energy than flash memory and may be faster than SRAM.
The University of Pittsburgh has received a $1.8 million grant to create a new kind of computer using a tiny 'toy' with big potential. The project aims to develop a scalable sensing, storage, and computation platform, enabling the creation of high-tech industries and jobs in the United States.
Researchers at UC Berkeley have demonstrated negative capacitance in ferroelectric materials, a phenomenon that can amplify charge for a given voltage. This breakthrough has the potential to revolutionize computing by enabling the creation of low-power transistors without compromising performance.
Purdue researchers develop new type of graphene inverter that works at room temperature, enabling transistors to amplify signals and control switching. The breakthrough could lead to the creation of ultrafast devices with simplified circuits for broader digital applications.
Researchers at VCU are developing a new paradigm for digital computing that could enable the creation of energy-efficient processors running without batteries. The goal is to increase computational power and reduce heat dissipation, making it suitable for medical devices such as brain signal monitors.
Researchers developed a large molecule stable and inexpensive to produce, paving the way for plastic-based flexible electronics. The technology may turn into everyday realities, including artificial skin, smart bandages and wearable electronics.
Researchers at the University of Cambridge have developed a new, more efficient way of generating spin current using collective motion of spins called spin waves. This breakthrough addresses a major obstacle in spintronics, a technology that could radically change computing with high-speed, high-density and low-power consumption.
Researchers at the University of Washington have created a system called EnergJ that reduces energy consumption in simulations by up to 50 percent. The system has the potential to cut energy by as much as 90 percent and could be used in various applications such as streaming audio and video, games, and real-time image recognition.
Researchers at the University of Illinois have observed a nanoscale cooling effect in graphene transistors, which could enable devices to cool themselves and operate more efficiently. This self-cooling effect is stronger than resistive heating and has the potential to greatly improve energy efficiency.
University of Utah researchers built spintronic transistors that aligned magnetic spins of electrons for a record period of time at room temperature. The achievement is a significant step towards the development of faster and more power-efficient spintronic devices using silicon chips.
Researchers have discovered a new material, molybdenite, that can be used to make smaller and more energy-efficient electronic chips. Molybdenite has distinct advantages over traditional silicon or graphene for use in electronics applications.
Researchers from Georgia Tech developed a new method to combine top-gate organic field-effect transistors with a bilayer gate insulator, allowing for stable operation in various environments. The transistor can be mass produced at lower temperatures and is compatible with plastic devices.
Researchers have successfully used nanoscale transistors to detect the binding of DNA double helix halves, directly amplifying single biomolecule charge. This technique offers a powerful tool for studying single molecule interactions and has potential applications in protein assays, DNA sequencing and other areas.
Researchers developed a new device that manipulates and detects spins in semiconductors at high temperatures, promising advances in low-power electronics. The device has potential applications in fields like energy transfer, secure communications, and sensor development.
Researchers have successfully integrated ultra-thin layers of indium arsenide onto a silicon substrate to create nanoscale transistors with excellent electronic properties. The devices exhibited superior performance in terms of current density and transconductance compared to silicon transistors.
Researchers at Rensselaer Polytechnic Institute have developed a new method to tune the band gap of graphene using water. By exposing graphene to humidity, they created a band gap in the nanomaterial, opening the door to new graphene-based transistors and nanoelectronics.
Triple-mode transistors based on graphene can switch between positive and negative carriers, providing opportunities not possible with traditional single-transistor architectures. This property enables the transistor to be used in various applications such as wireless and audio signaling schemes.
Researchers have developed electromechanical switches that can withstand twice the heat as transistors, enabling computers to operate in extreme temperatures. The switches, made from silicon carbide and nanotechnology, perform better than transistors at high temperatures and have no discernible leakage.
Researchers from North Carolina State University have developed a means to integrate gallium nitride (GaN) sensors and devices directly into silicon-based computer chips. This enables the development of high-power devices critical for smart grid technology and high-frequency military communications.
Stanford researchers developed an electronic sensor that can detect the slightest touch, mimicking human skin's sensitivity. The new artificial skin uses a thin film of rubber molded into tiny pyramids, allowing it to perceive pressures in a range of very gentle touches.
Researchers at UCLA have overcome difficulties in integrating graphene into electronic devices, achieving the fastest graphene transistor to date with a cutoff frequency of up to 300 GHz. This breakthrough enables the development of high-speed radio-frequency electronics for applications in microwave communication and radar technologies.
Researchers at UC San Diego developed a new chip prototype called GreenDroid, which uses dark silicon to improve performance through specialized processors. The prototype delivers improved efficiency by running heavily used code in Google's Android platform, resulting in up to 7.5 times increased efficiency compared to aggressive mobil...
Researchers at Harvard University have developed nanowire-based V-shaped transistors that can be inserted into cells without damaging them. These devices allow for the measurement of ion flux or electrical signals within cells, and can even be fitted with receptors to probe for specific biochemicals.
A team of Hong Kong researchers has demonstrated that burying a layer of silver nanoparticles improves the performance of organic electronic devices. The finding is significant as it suggests a simple and cost-effective way to enhance transistor performance.
Researchers have developed a new method to produce graphene using chemical synthesis, creating a material with improved electronic properties. The new approach allows for the fine-tuning of structures in terms of size, shape, and geometry, making it suitable for commercial mass production.
Researchers have rewritten Kirchhoff's current law to accommodate the unique properties of the transistor laser, enabling better understanding of photons, electrons, and semiconductors. The modified law fits data from the device, predicting properties for integrated circuits and supercomputing applications.
A multidisciplinary research team at NIST has found a viable candidate for creating large-area electronics by spraying organic semiconductor material onto a surface. The material overcomes a major cost hurdle in the manufacture of organic thin-film transistors, which could lead to disposable devices.
Researchers from Yale University and Gwangju Institute of Science and Technology created the first transistor made from a single molecule by manipulating the energy states of a benzene molecule through gold contacts. They successfully controlled the current passing through the molecule using voltage manipulation.
Researchers at UCLA and IBM successfully grown silicon-germanium semiconducting nanowires for potential use in next-generation transistors. The nanowires could help speed the development of smaller, faster and more powerful electronics.
Scientists at IBM and Purdue University have successfully created ultrasmall transistors using semiconducting nanowires with sharply defined layers of silicon and germanium. This breakthrough could lead to faster computing and more powerful computer chips.
Purdue researchers have developed finFETs using indium-gallium-arsenide, enabling faster and more compact circuits. The new technology may replace conventional silicon transistors and solve the industry's transistor limitations.