Articles tagged with Transistors
Cosmic rays generated by particles from outside the solar system can alter individual bits of data stored in memory, causing single-event upsets (SEUs) that can be difficult to characterize. The problem is becoming increasingly serious as computer chip technology advances and becomes smaller.
Researchers at NaMLab have demonstrated the world's first germanium transistor that can switch between electron and hole conduction, enabling lower power consumption and reduced transistor count. This breakthrough could lead to more efficient digital electronics, with potential applications in areas like energy storage and computing.
Researchers at Linköping University developed the world's first heat-driven transistor, opening up new possibilities for temperature detection and medical applications. The transistor converts a 100 times greater temperature gradient to electric voltage than traditional thermoelectric materials.
Researchers at MIT found no evidence of dematerialization in 56 materials and goods, despite technological improvements. Despite increased efficiency, consumer demand for products continues to outpace material usage.
Researchers optimized GaN-on-Silicon transistor composition to achieve high electron mobility, enabled by buffer layers that reduce strain and defects. The team achieved an electron mobility of 1,800 cm2/V-sec, paving the way for fully functional high-frequency devices for 5G applications.
Researchers have developed a flexible transistor that can be stretched to twice its length without significant changes in conductivity. The breakthrough uses a semiconducting polymer confined within an elastic matrix, demonstrating effective transconductivity even under heavy stretching.
The study introduces tunneling modulation of a quantum well transistor laser, enabling fast carrier transport and recombination. This technology relies on intra-cavity photon-assisted tunneling, which enhances optical absorption and modulation in transistors and lasers.
Researchers have deciphered the electronic properties of transition metal dichalcogenides, a promising alternative to graphene for next-generation transistors. The discovery sheds light on how electrons behave in these materials, offering hope for future applications.
Researchers at NYU Tandon School of Engineering have developed a method for growing high-quality monolayer tungsten disulfide, a material with electronic and optoelectronic applications. The technique boasts the highest carrier mobility values recorded thus far for this material.
Newly developed transistors harness near-off-state current to operate, reducing power consumption to below a billionth of a watt. This enables long-term operation without batteries, ideal for wearable and implantable devices in the Internet of Things.
Scientists at UT Dallas developed a tiny transistor with a gate size of 1 nanometer, smaller than the current limit of silicon-based transistors. The new device uses transition metal dichalcogenides, reducing leakage current by over two orders of magnitude and potential power consumption.
Researchers at Berkeley Lab break major barrier in transistor size by creating a gate only 1-nanometer long, challenging the conventional 5-nanometer threshold. The achievement enables electrons to be controlled with smaller gate lengths using carbon nanotubes and molybdenum disulfide.
Researchers at University of Wisconsin-Madison have created carbon nanotube transistors that outperform state-of-the-art silicon transistors, achieving a current 1.9 times higher than silicon transistors. The breakthrough could pave the way for carbon nanotubes to replace silicon in electronic devices.
Scientists have developed a new method for making transparent transistors and electronic circuits using aluminum-doped zinc oxide (AZO), a cheaper and more abundant material than indium tin oxide (ITO). The process uses atomic layer deposition, which improves circuit performance and simplifies fabrication.
Researchers at KAIST have developed ultrathin, transparent oxide thin-film transistors that overcome previous challenges in flexible display technology. The new technology uses an inorganic-based laser lift-off method to create high-performance devices with excellent optical transparency and mobility.
Engineers from the University of Utah and Minnesota have discovered that interfacing two oxide compounds makes them highly conductive, producing a hundred times more free electrons than semiconductors. This innovation could lead to smaller power supplies and devices with reduced energy consumption, such as laptops and home appliances.
University of Illinois researchers have developed a way to etch very tall, narrow finFETs, a type of transistor that forms a tall semiconductor 'fin' for the current to travel over. The new method addresses problems in creating 3-D devices by stacking layers or carving out structures from a thicker semiconductor wafer.
Researchers have discovered that an essential function for computing may be possible within a space so small that it's effectively one-dimensional. The team found that with the new material, electric currents move in a more phased way, beginning first at the edges before appearing in the interior.
The study reveals that the internal structure of gallium nitride-based HEMTs is responsible for their high radiation tolerance. A piezoelectric field formed at the interface causes carriers to be reinjected into the two-dimensional electron gas, reducing the impact of radiation-induced defects.
Scientists with Berkeley Lab developed a way to chemically assemble transistors and circuits that are only a few atoms thick, yielding functional structures large enough for real-world applications. This breakthrough helps pave the way for scalable and repeatable atomic electronics or more computing power in smaller areas.
Researchers at MIT developed a new compiler that translates human-written instructions into low-level specifications for analog computers. The compiler enables efficient simulation of biological systems using differential equations, which describe cell dynamics and chemical reactions.
Researchers have developed a single-layer organic nanometer-scale transistor that can detect molecules associated with neurodegenerative diseases and some types of cancer. The device uses glutathione and glutathione S-transferase to identify target molecules, offering sensitivity and potential for rapid diagnosis.
Researchers at North Carolina State University have developed a new technique to create passive RFID tags that are 25% smaller and less expensive. By eliminating the need for power conversion, the tags can operate directly from AC power, reducing size and cost.
Researchers at UW-Madison have pioneered a unique method to fabricate high-performance transistors on flexible plastic, enabling wireless capabilities and ultra-fast processor speeds. The transistor operates at 38 gigahertz, with simulations suggesting it could reach 110 gigahertz.
Researchers at UC Berkeley have shown that magnetic chips can operate with the lowest fundamental level of energy dissipation possible, leading to dramatic reductions in power consumption. This breakthrough is critical for mobile devices and cloud data centers, which demand powerful processors on small batteries.
A new study by University of Illinois engineers found that the transistor laser device can switch faster than traditional technologies due to photon-assisted tunneling, enabling ultra-high-speed signal modulation. The technology has the potential to revolutionize big data transfer and computing.
Researchers at University of Utah have discovered a new kind of 2D semiconducting material that could lead to much speedier computers and smartphones. The material, made of tin and oxygen, allows electrical charges to move through it faster than conventional materials.
Researchers have created a new material using quantum dots of iron on boron nitride nanotubes, which can replace semiconductors in wearable technology. This new material enables transistors to shrink and reduces heat generation, making it suitable for flexible and efficient wearable electronics.
A team of researchers at MIT has successfully built a working optoelectronic microprocessor, demonstrating the feasibility of optical communication in computing. The chip computes electronically but uses light to move information, potentially reducing power consumption and increasing performance.
Researchers have developed a transistor that functions solely on a single molecule, eliminating the need for three electrodes. The switch's state can be altered using a single electron, offering new opportunities for ultra-small switches and increased integration densities.
A team of engineers at UC Berkeley has developed a method to fix defects in monolayer semiconductors, increasing photoluminescence quantum yield by 100-fold. The technique uses an organic superacid to create defect-free material for applications such as transparent LED displays and high-performance transistors.
A team of researchers at Ruhr-Universität Bochum has developed a method to control the interior of transistors by applying resonators at terahertz frequencies. This allows for manipulation of ultra-thin electron layers, enabling new applications in sensors and chemical technology.
Researchers at Linköping University successfully integrated electronic components into living roses, enabling the creation of digital logic gates, displays, and even electrochemical transistors. This breakthrough paves the way for innovative applications in energy, environmental sustainability, and plant science.
Researchers have successfully integrated flexoelectric materials into silicon technology, paving the way for more energy-efficient and sustainable electronics. The development could provide an alternative to traditional piezoelectric materials, which pose toxicity concerns.
Researchers at ETH Zurich improve nanoscale component simulations using the Oak Ridge Leadership Computing Facility's Cray XK7 Titan supercomputer. The team achieves significant reductions in simulation time, enabling accurate modeling of 10,000 atoms and paving the way for next-generation hardware development.
Researchers at the University of New South Wales have successfully built a silicon quantum computer, overcoming a crucial hurdle. The achievement enables the creation of a logic gate using two qubits, paving the way for a full-scale processor chip.
Researchers use X-rays to study nickelates and discover that tensile strain facilitates the transfer of electrons between atoms, ruling out electronic checkerboard theory. The findings provide new insight into the metal-insulator transition, guiding the design of new electronic devices.
Researchers at Northwestern University have developed a solution to create stable carbon nanotube-based integrated circuits using newly designed encapsulation layers. These layers protect the sensitive devices from environmental degradation, enabling reliable operation for years or even decades.
Physicists have developed a single silicon nanoparticle as an ultrafast all-optical transistor, enabling ultrafast switching and promising for optical computing. The study found that the nanoparticle's properties can be dramatically changed by irradiating it with intense laser pulses, allowing for control of light scattering direction.
Researchers at the University of Copenhagen have developed a method for self-assembling molecular electronics using soap, creating ordered molecular structures that can be used to make solar cells and transistors. The breakthrough is a significant step forward in the development of environmentally sustainable and flexible electronics.
Researchers created a high-performance transistor using black phosphorus, which can operate as both n-type and p-type materials without extrinsic doping. This could lead to thinner, more efficient alternative to silicon chips in electrical devices.
Scientists have developed a method to produce arrays of semiconductor junctions within a single, nanometer-thick crystal using pulsed laser deposition and commercial electron-beam lithography techniques. This breakthrough enables the creation of ultrathin electronics with tunable bandgaps for various applications.
Graphene transistors and photodetectors will benefit from this simpler thermodynamic approach, allowing for improved performance. Researchers have discovered that the energy of ultrafast electrical currents is efficiently converted into electron heat, enabling faster operation speeds.
Researchers at McGill University and Université de Montréal report that black phosphorus can help overcome the challenge of designing energy-efficient transistors. The material's two-dimensional properties allow electrons to move in only two dimensions, making it a promising candidate for future electronics.
Researchers developed a biodegradable silicon transistor using cellulose nanofibrillated fiber substrate, offering a sustainable alternative to traditional silicon-based transistors. The device exhibited superior performance and microwave-frequency operation capabilities comparable to existing semiconductor transistors.
Researchers have successfully fabricated large-scale field-effect transistors based on solution-grown organic single crystals, achieving superior mobility values. The devices demonstrate high-performance characteristics, including high hole mobility and on-to-off current ratios.
Researchers at Stanford University have found a way to improve chip speeds by wrapping copper wires with a protective layer of graphene. This modest fix can lead to faster data processing and is especially beneficial as transistors continue to shrink in size.
Researchers transformed bacteria into 'secret agents' that detect abnormal glucose levels in diabetic patients' urine. The bacteria are programmed using genetic transistors, allowing them to amplify and store molecular signals for months.
Researchers at UMass Amherst developed a new understanding of strain effects on organic transistor performance, revealing that micro-scale wrinkling can enhance or have no effect on electrical properties. The study contributes to the development of next-generation flexible electronic devices.
A new fabrication technique allows for direct production of polycrystalline silicon on flexible surfaces, enabling the creation of wearable electronics and other applications. The method bypasses a traditional thermal annealing step, making it more suitable for use with flexible substrates.
Researchers at MIT have developed a new transmitter design that reduces off-state leakage 100-fold, allowing for longer battery life in IoT devices. The circuit uses a charge pump to generate a negative charge when idle, reducing power consumption by 20 picowatts.
Scientists have created ultra-small and highly sensitive gas sensors made of molybdenum disulfide, which can selectively detect ethanol, acetonitrile, toluene, chloroform and methanol vapors. The sensors are ideal for various applications due to their small size, high selectivity and sensitivity.
Researchers at MIT and UT Austin create a new class of materials for quantum spin Hall effect, enabling potential electronic devices with low losses. They used Stampede and Lonestar supercomputers to model the interactions of atoms in these novel materials, two-dimensional transition metal dichalcogenides.
Researchers discover molybdenum disulfide thin-film transistors functional at high temperatures, demonstrating potential for extreme-temperature electronics. The material's stable operation after two months suggests new applications in harsh environments.
A new thermal imaging technique called plasmon energy expansion thermometry (PEET) allows for precise temperature mapping in tiny electronic circuits. This can help engineers design microprocessors that minimize overheating and improve device performance.
Scientists at USC and UCLA have discovered a way to accurately measure temperatures inside microelectronic devices using a novel technique called Plasmon Energy Expansion Thermometry (PEET). This breakthrough enables better thermal management, leading to faster transistors and lower power consumption.
Researchers at University of Texas at Austin developed the first silicene transistors, made of one-atom-thick silicon material. The breakthrough paves the way for faster and energy-efficient computer chips.
The University of Wisconsin-Madison team developed ultra-high-purity semconducting carbon nanotubes using a new technique, enabling more efficient and durable electronics. This breakthrough could lead to flexible displays, clothing-integrated electronics, and improved consumer devices with longer battery life.
The Stanford team created a high-rise chip with multiple layers of logic and memory, potentially leading to computing performance that is much greater than anything available today. The architecture leverages three breakthroughs: new transistor technology, multi-story computer memory, and innovative fabrication techniques.
Researchers at Purdue University have created the first modern germanium circuit, a complementary metal-oxide-semiconductor (CMOS) device, using germanium as the semiconductor material. The breakthrough enables the industry to make smaller transistors and more compact integrated circuits, potentially replacing silicon in the future.