Articles tagged with Transistors
Researchers successfully controlled electrons in graphene using a high-tech microscope, paving the way for novel electronic devices. This breakthrough could lead to ultra-fast transport of electrons with low energy loss in applications such as transistors and sensors.
A Concordia University study published in Nature Communications reveals the potential for ultra-smart transistors that harness the quantum nature of electrons. Researchers have made a breakthrough in controlling electron behavior within nanoelectronics, showing new engineering possibilities for two-in-one quantum electronic devices.
KAUST researchers have demonstrated a scalable, efficient alternative technology to traditional electrical transistors, using mechanical vibrations excited by multifrequency electrical inputs. This novel technique enables the cascading of logic gates, resulting in lower complexity and higher integration densities.
A US-based research team has demonstrated optical and electrical bistability for switching in a single transistor, offering potential solutions to the bandwidth limitations of electronic computers. The study showcases the control of transistor laser electrical and optical bistabilities by base current and collector voltage.
Researchers at IBS developed first 2D field-effect transistor made of single material, overcoming efficiency limits of current 3D transistors. The new technique uses a polymorphic material, molybdenum telluride (MoTe2), to produce both metal and semiconductor components with low contact resistance.
Researchers from North Carolina State University have developed a new manufacturing process called PRESiCE, which enables the mass production of silicon carbide (SiC) power devices. This process reduces the cost of SiC devices by up to 1.5 times that of silicon-based devices, making them more competitive in the market.
Researchers successfully manipulated graphene's electronic structure to create faster and more reliable transistors. The work guides the use of rare-earth metal ions to modify graphene's band gap, enabling new applications in spintronics.
Researchers at Stanford University have discovered two semiconductors that can form high-quality insulators when exposed to oxygen, a trait shared by silicon but not other semiconductors. The new materials can be shrunk to atomic thinness and require less energy than silicon circuits, making them ideal for future devices.
Researchers at Louisiana State University and Tulane University have observed topological behavior in a magnet, Sr1-yMn1-zSb2, which displays nearly massless electronic charge carriers. This discovery holds promise for novel device concepts with reduced power consumption and heat production.
Researchers at the University of Hamburg have developed a new transistor concept based on metal nanoparticles, which exhibit energy gap properties due to Coulomb repulsion. This approach enables scalable synthesis, high-quality thin films and flexible devices with adjustable electrical characteristics.
Researchers at UC San Diego developed a temperature sensor that runs on 113 picowatts of power, reducing energy consumption by 628 times. The technology can enable new devices powered by harvesting energy from low-power sources.
Researchers at Linköping University have successfully applied a thin layer of a ferroelectric material to control electronic nonlinearity in ion-doped conducting polymers. This breakthrough enables precise switching of transistors and color changes in displays, opening up new possibilities for applications in printed electronics.
Researchers created a quantum dot transistor that can store and process information directly in memory. The device simulates the functions of neurons by using light to control electrical charging and discharging of quantum dots.
Researchers have developed a graphene-based transistor that can produce massive jumps in computing speed and efficiency. By applying a magnetic field, the resistance of current flowing through the device can be controlled, allowing for faster processing speeds and reduced power consumption.
Engineer Dr. Joseph S. Friedman designs a novel computing system made solely from carbon that might replace silicon transistors in electronics. The resulting all-carbon spin logic proposal enables cascaded logic gates with increased performance and potential terahertz clock speeds.
Researchers in Japan developed a new diamond-based transistor fabrication process that promises to advance the development of more robust and energy-efficient electronics. The process uses manufactured diamonds with yttrium oxide insulator to overcome silicon limitations.
A team of researchers has found a way to achieve the highly sought-after tetragonal phase of hafnia, a material for computer chips and transistors, at 1100 degrees Fahrenheit. This breakthrough could lead to more powerful and efficient electronics.
Engineers have created a transistor that can form an optical-electric switch, enabling faster processing speeds. The device can communicate without interference, overcoming the bottleneck formed by electronic data transmission.
Researchers at North Carolina State University have developed hybrid circuits that leverage both digital and analog components to improve the computational power of chaos-based systems. By distributing computation between digital and analog circuits, they achieve exponential reductions in computational time and enhance noise tolerance.
The first fully functional microprocessor logic devices based on few-atom-thin layered materials have been demonstrated, enabling flexible and compact electronic devices. The transistors made from molybdenum disulphide (MoS2) can perform 1-bit logic operations and are scalable to multi-bit operations.
Scientists have successfully developed a 1-bit microprocessor consisting of 115 transistors on a surface area of around 0.6 mm2, running simple programs. The breakthrough uses molybdenum disulphide, a two-dimensional material with semiconductor properties.
The Graphene Flagship research team has successfully fabricated all-printed, all-layered materials transistors using graphene flakes and other layered materials. This innovation could enable the creation of affordable electronic devices such as smart labels and e-passports.
Researchers at AMBER Centre have fabricated the first printed transistors consisting entirely of 2-dimensional nanomaterials, opening the path for industry to cheaply print electronic devices. The breakthrough could unlock applications such as smart food packaging and labels, and even window panes displaying weather forecasts.
Researchers have developed a method to select semiconducting carbon nanotubes from a solution and make them self-assemble on gold electrodes, resulting in tiny transistors with nearly 100% purity. The process uses polymers with thiol side chains to bind the tubes to the electrodes.
Researchers at UNIST created a three-dimensional tactile sensor that detects wide pressure ranges from human body weight to finger touch. The novel method uses foldable substrates and air-dielectric layers, enabling simultaneous detection of position and intensity of pressure.
Researchers at MIT create a new 3D-printed device that responds to mechanical stresses by changing the color of its surface, inspired by the golden tortoise beetle. The device has potential applications in flexible sensor-laden robots and self-assembling structures.
Researchers at Linköping University have developed an organic converter that enables the use of electricity from a wall socket to drive organic light-emitting devices and charge supercapacitors. This innovation paves the way for flexible, thin, cost-effective, and eco-friendly solutions in electronics.
Cosmic rays generated by particles from outside the solar system can alter individual bits of data stored in memory, causing single-event upsets (SEUs) that can be difficult to characterize. The problem is becoming increasingly serious as computer chip technology advances and becomes smaller.
Researchers at NaMLab have demonstrated the world's first germanium transistor that can switch between electron and hole conduction, enabling lower power consumption and reduced transistor count. This breakthrough could lead to more efficient digital electronics, with potential applications in areas like energy storage and computing.
Researchers at Linköping University developed the world's first heat-driven transistor, opening up new possibilities for temperature detection and medical applications. The transistor converts a 100 times greater temperature gradient to electric voltage than traditional thermoelectric materials.
Researchers at MIT found no evidence of dematerialization in 56 materials and goods, despite technological improvements. Despite increased efficiency, consumer demand for products continues to outpace material usage.
Researchers optimized GaN-on-Silicon transistor composition to achieve high electron mobility, enabled by buffer layers that reduce strain and defects. The team achieved an electron mobility of 1,800 cm2/V-sec, paving the way for fully functional high-frequency devices for 5G applications.
Researchers have developed a flexible transistor that can be stretched to twice its length without significant changes in conductivity. The breakthrough uses a semiconducting polymer confined within an elastic matrix, demonstrating effective transconductivity even under heavy stretching.
Researchers have deciphered the electronic properties of transition metal dichalcogenides, a promising alternative to graphene for next-generation transistors. The discovery sheds light on how electrons behave in these materials, offering hope for future applications.
The study introduces tunneling modulation of a quantum well transistor laser, enabling fast carrier transport and recombination. This technology relies on intra-cavity photon-assisted tunneling, which enhances optical absorption and modulation in transistors and lasers.
Researchers at NYU Tandon School of Engineering have developed a method for growing high-quality monolayer tungsten disulfide, a material with electronic and optoelectronic applications. The technique boasts the highest carrier mobility values recorded thus far for this material.
Newly developed transistors harness near-off-state current to operate, reducing power consumption to below a billionth of a watt. This enables long-term operation without batteries, ideal for wearable and implantable devices in the Internet of Things.
Scientists at UT Dallas developed a tiny transistor with a gate size of 1 nanometer, smaller than the current limit of silicon-based transistors. The new device uses transition metal dichalcogenides, reducing leakage current by over two orders of magnitude and potential power consumption.
Researchers at Berkeley Lab break major barrier in transistor size by creating a gate only 1-nanometer long, challenging the conventional 5-nanometer threshold. The achievement enables electrons to be controlled with smaller gate lengths using carbon nanotubes and molybdenum disulfide.
Researchers at University of Wisconsin-Madison have created carbon nanotube transistors that outperform state-of-the-art silicon transistors, achieving a current 1.9 times higher than silicon transistors. The breakthrough could pave the way for carbon nanotubes to replace silicon in electronic devices.
Scientists have developed a new method for making transparent transistors and electronic circuits using aluminum-doped zinc oxide (AZO), a cheaper and more abundant material than indium tin oxide (ITO). The process uses atomic layer deposition, which improves circuit performance and simplifies fabrication.
Researchers at KAIST have developed ultrathin, transparent oxide thin-film transistors that overcome previous challenges in flexible display technology. The new technology uses an inorganic-based laser lift-off method to create high-performance devices with excellent optical transparency and mobility.
Engineers from the University of Utah and Minnesota have discovered that interfacing two oxide compounds makes them highly conductive, producing a hundred times more free electrons than semiconductors. This innovation could lead to smaller power supplies and devices with reduced energy consumption, such as laptops and home appliances.
University of Illinois researchers have developed a way to etch very tall, narrow finFETs, a type of transistor that forms a tall semiconductor 'fin' for the current to travel over. The new method addresses problems in creating 3-D devices by stacking layers or carving out structures from a thicker semiconductor wafer.
Researchers have discovered that an essential function for computing may be possible within a space so small that it's effectively one-dimensional. The team found that with the new material, electric currents move in a more phased way, beginning first at the edges before appearing in the interior.
The study reveals that the internal structure of gallium nitride-based HEMTs is responsible for their high radiation tolerance. A piezoelectric field formed at the interface causes carriers to be reinjected into the two-dimensional electron gas, reducing the impact of radiation-induced defects.
Scientists with Berkeley Lab developed a way to chemically assemble transistors and circuits that are only a few atoms thick, yielding functional structures large enough for real-world applications. This breakthrough helps pave the way for scalable and repeatable atomic electronics or more computing power in smaller areas.
Researchers at MIT developed a new compiler that translates human-written instructions into low-level specifications for analog computers. The compiler enables efficient simulation of biological systems using differential equations, which describe cell dynamics and chemical reactions.
Researchers have developed a single-layer organic nanometer-scale transistor that can detect molecules associated with neurodegenerative diseases and some types of cancer. The device uses glutathione and glutathione S-transferase to identify target molecules, offering sensitivity and potential for rapid diagnosis.
Researchers at North Carolina State University have developed a new technique to create passive RFID tags that are 25% smaller and less expensive. By eliminating the need for power conversion, the tags can operate directly from AC power, reducing size and cost.
Researchers at UW-Madison have pioneered a unique method to fabricate high-performance transistors on flexible plastic, enabling wireless capabilities and ultra-fast processor speeds. The transistor operates at 38 gigahertz, with simulations suggesting it could reach 110 gigahertz.
Researchers at UC Berkeley have shown that magnetic chips can operate with the lowest fundamental level of energy dissipation possible, leading to dramatic reductions in power consumption. This breakthrough is critical for mobile devices and cloud data centers, which demand powerful processors on small batteries.
A new study by University of Illinois engineers found that the transistor laser device can switch faster than traditional technologies due to photon-assisted tunneling, enabling ultra-high-speed signal modulation. The technology has the potential to revolutionize big data transfer and computing.
Researchers at University of Utah have discovered a new kind of 2D semiconducting material that could lead to much speedier computers and smartphones. The material, made of tin and oxygen, allows electrical charges to move through it faster than conventional materials.
Researchers have created a new material using quantum dots of iron on boron nitride nanotubes, which can replace semiconductors in wearable technology. This new material enables transistors to shrink and reduces heat generation, making it suitable for flexible and efficient wearable electronics.
A team of researchers at MIT has successfully built a working optoelectronic microprocessor, demonstrating the feasibility of optical communication in computing. The chip computes electronically but uses light to move information, potentially reducing power consumption and increasing performance.
Researchers have developed a transistor that functions solely on a single molecule, eliminating the need for three electrodes. The switch's state can be altered using a single electron, offering new opportunities for ultra-small switches and increased integration densities.
A team of engineers at UC Berkeley has developed a method to fix defects in monolayer semiconductors, increasing photoluminescence quantum yield by 100-fold. The technique uses an organic superacid to create defect-free material for applications such as transparent LED displays and high-performance transistors.
A team of researchers at Ruhr-Universität Bochum has developed a method to control the interior of transistors by applying resonators at terahertz frequencies. This allows for manipulation of ultra-thin electron layers, enabling new applications in sensors and chemical technology.
Researchers at Linköping University successfully integrated electronic components into living roses, enabling the creation of digital logic gates, displays, and even electrochemical transistors. This breakthrough paves the way for innovative applications in energy, environmental sustainability, and plant science.