Articles tagged with Transistors
Researchers from NYU introduce a voltage-controlled topological spin switch (vTOPSS) that reduces heat generated and energy used in computing. The new method enables faster and more secure computing by replacing traditional silicon transistors, increasing functionality and circuit design possibilities.
A new CRISPR-based device, CRISPR-Chip, can detect specific genetic mutations in a matter of minutes. The device uses graphene transistors to scan DNA samples and report results electronically, bypassing the need for polymerase chain reaction amplification.
Researchers have developed an organic transistor that can operate efficiently under various current densities, opening up potential applications in OLEDs, sensors, and memristive elements. The device combines high currents with low-voltage operation, making it suitable for artificial synapses and other contexts.
Researchers at University of California, Davis and Maynooth University created programmable DNA molecules that can self-assemble into patterns by running their own program. They designed and ran 21 algorithms, demonstrating the potential of the system for sophisticated molecular engineering.
Negative capacitance field-effect transistors (NC-FETs) have been proposed as a way to make traditional transistors more efficient by adding a thin layer of ferroelectric material. The technology has the potential to transform the semiconductor industry and enable chips that compute far more while requiring less frequent charging.
Researchers at Tokyo Tech report a unipolar n-type transistor with electron mobility of up to 7.16 cm2 V-1 s-1, exceeding previous results by 40%. The material achieves this performance through fine-tuning the backbone conformation and introducing vinylene bridges.
Researchers have developed biocompatible ion-driven transistors that can record high-quality neural signals, suitable for advanced data processing. The transistors' channel is made from fully biocompatible materials, enabling efficient communication with neural signals.
Researchers at Rice University have developed a new PUF technology that provides a leap in reliability for IoT devices. The technology uses microchip physical imperfections to produce unique security keys, making it ideal for authentication and encryption.
Scientists at Linköping University have developed an organic electrochemical transistor that can learn and create new connections, similar to the human brain. The transistor uses a unique material called ETE-S, which allows it to adapt to changing input signals, enabling the creation of new connections.
Researchers at FAU developed a simple yet accurate method to find interface defects in silicon carbide transistors. This allows for improved and shorter innovation cycles in developing more energy-saving power electronics.
Researchers at Kansas State University have made a groundbreaking discovery in developing ultra-low noise, high-performance transistors using two-dimensional atomic thin materials. The breakthrough could pave the way for innovative technologies in electronics and sensing.
Researchers elucidated the operation mechanism of ferroelectric-HfO2-based transistors and memories, enabling sub-60mV/dec subthreshold slope and high-capacity nonvolatile storage. The study's findings will guide device design for ultralow power operating NCFETs and high-capacity FTJ memories.
Researchers at University of Notre Dame have developed a new mathematical approach to solve NP-hard problems using analog computing. The 'solver' has the potential to find better and possibly faster solutions than digital computers for complex optimization problems.
The development of a vertical Ga2O3 metal-oxide-semiconductor field-effect transistor enables higher current drives without enlarging chip size, simplified thermal management, and improved field termination. The device shows decent electrical properties, paving the way for new generations of low-cost power electronic devices.
Researchers have successfully switched a material between two states of matter via application of an electric-field, paving the way for a functioning topological transistor. This breakthrough could enable ultra-low energy electronics to continue growing without being limited by available energy.
Researchers have demonstrated electronic switching in an exotic, ultrathin material at room temperature, reducing energy loss and increasing efficiency for transistors. The breakthrough uses sodium bismuthide (Na3Bi), a 'topological Dirac semimetal' that can be tuned to behave like a conventional or topological material.
Researchers propose using multiferroics and topological materials to create logic and memory devices that are 10-100 times more energy-efficient than current microprocessors. This could enable significant advancements in computing power, particularly for applications like self-driving cars and drones.
A team of scientists and engineers at the University of Illinois has developed a new technique for creating nanoscale-size electromechanical devices by using graphene as an etch stop. This allows for precise patterning of two-dimensional structures, enabling the creation of complex devices with improved performance.
Researchers at KIT have developed the world's smallest transistor that can switch electrical current with a single atom in a solid electrolyte. The single-atom transistor consumes very little energy and operates at room temperature.
Dr. Nick Strandwitz is exploring a multi-step method to address temperature issues in atomic layer deposition (ALD), a process crucial for precision thin film growth. His goal is to control the crystallinity of the material, which affects its electronic properties.
Researchers at NASA's Goddard Space Flight Center are investigating the use of gallium nitride crystals in various space applications, including radiation tolerance and neutron detection. The material's high efficiency and resistance to radiation make it an attractive option for reducing instrument size, weight, and power consumption.
Researchers at the University of Texas at Arlington have developed a novel cold electron transistor that drastically reduces energy consumption. This innovation could lead to huge energy savings for companies like Google and Amazon, as well as enhance soldiers' combat capabilities in military applications.
IGZO TFTs have a high electron mobility of 10 times that of hydrogenated amorphous silicon, allowing for high-resolution energy-efficient displays. These displays are used in smartphones, tablets, and large OLED televisions, which were previously thought to be impossible.
The University of Utah's Pierre-Emmanuel Gaillardon led two projects awarded by DARPA's Electronics Resurgence Initiative, focusing on developing open-source hardware compilers and high-quality FPGAs. The projects aim to create an eco-system for rapid development of complex system-on-chips.
Researchers have demonstrated the first single-photon transistor using a semiconductor chip, paving the way for photon-based computing. The device can process 10 billion photonic qubits per second and is compact enough to fit inside a grain of salt.
Researchers at Columbia University have developed a single molecular insulator that can effectively block leakage current in transistors, paving the way for smaller and more efficient devices. The breakthrough uses quantum interference-based approach to create a novel technique for blocking tunnelling conduction at the nanoscale.
A Rutgers-led team has developed a new material that conducts electricity without energy loss, paving the way for low-power electronics and potentially faster quantum computing. The material, which combines magnetic and insulator properties, can be used for electronic interconnections within silicon chips.
Stanford researchers have developed an artificial sensory nerve system that can activate twitch reflexes in cockroaches and identify Braille letters. The system integrates a touch sensor, flexible electronic neuron, and synaptic transistor to mimic human synapses.
Researchers have discovered a new two-dimensional material, tellurene, derived from the rare element tellurium, which can make transistors carry current better throughout a computer chip. This breakthrough could lead to faster processing speeds in electronic devices and defense technologies.
A Columbia University-led team developed a technique to manipulate graphene's electrical conductivity with compression, bringing it closer to being a viable semiconductor. By applying pressure, researchers increased the band gap in BN-graphene structures, effectively blocking electricity flow and creating a stronger switch.
University of Waterloo chemists have found a new way to process and store information by inducing magnetization in semiconductors with light. This discovery could lead to the development of faster and more efficient computing devices, potentially extending Moore's Law.
Researchers have discovered a new material that can absorb and selectively reemit light, providing a platform to understand how information is stored and processed in valleytronics devices. This breakthrough could enable the development of operational valleytronic devices with increased computing power and data storage density.
Japanese researchers have developed a new method to build large areas of semiconductive material just two molecules thick. The films function as thin film transistors with potential applications in flexible electronics or chemical detectors. Researchers used geometric frustration, a molecular shape that makes it difficult for molecules...
Researchers aim to improve computer chip components with new materials and designs. The NEW LIMITS center will develop ultra-thin 2-D materials to boost transistor performance while maintaining smaller size.
A novel 'memtransistor' device developed by Northwestern University's Mark C. Hersam can process information and store memory like the human brain, potentially revolutionizing computing. The memtransistor combines characteristics of a memristor and transistor, operating with multiple terminals similar to neural networks.
Researchers at Penn Engineering have developed an optical switch that can mimic the behavior of electronic transistors, enabling efficient signal processing and computation. The breakthrough, achieved by precisely controlling light waves using tailored electric fields, could lead to significant advances in photonic computing.
Researchers at University of Southampton have discovered a way to enhance memristor performance, opening doors to new electronics design. They pushed the device to store up to 128 discernible memory states per switch, almost four times more than previously reported.
The researchers have designed non-planar vertical semiconductor fin-like structures that are laterally interconnected to form wavy transistor arrays. This design widens the transistors by 70% without expanding their occupied pixel area, doubling the transistor performance.
A nanostructured gate dielectric has improved the stability of organic thin-film transistors, allowing them to operate in ambient conditions and enabling potential applications in IoT devices and large flexible displays.
Researchers at Linköping University developed the world's first complementary electrochemical logic circuits that function stably for long periods in water. This breakthrough has major consequences for many applications, including bioelectronics and printed electronics.
Researchers integrated oxide two-dimensional electron gases with gallium arsenide, creating a promising material for new electronic devices. The new development could lead to the creation of transistors, superconducting switches, and gas sensors that interact with light.
Trisodium bismuthide (Na3Bi) has been found to have an electronically smooth nature similar to graphene, allowing it to maintain high electron mobility. This discovery opens up possibilities for the advancement of topological materials and their applications in electronics.
Researchers at MIT developed a new design for gallium nitride power devices that can handle higher voltages, potentially reducing energy waste in electric vehicles, data centers and the power grid. The device uses a bladelike fin design to confine current, improving efficiency and heat dissipation.
KAUST researchers have devised a strategy to integrate transparent conducting metal-oxide contacts with 2D semiconductors into fully transparent devices. The team used aluminum-doped zinc oxide, a low-cost transparent and electrically conductive material, to generate series of devices and circuits.
Researchers have successfully grown graphene nanoribbons with a regular armchair edge, exhibiting a precisely defined energy gap. This enabled the integration of these structures into nanotransistors, overcoming previous challenges related to dielectric layers and ribbon alignment.
Researchers at Northwestern University developed a novel framework to benchmark and compare the performances of organic mixed conductors. By using electrochemical transistors, they evaluated the strengths and weaknesses of 10 newly developed materials, identifying top-performing conductors for specific applications.
Scientists used gold nanoparticles with molybdenum disulfide to study strain occurring when a semiconductor contacts a conductor at the nanoscale. They demonstrated localized strain of 1.4% using Tip-Enhanced Raman Spectroscopy, a unique technology that combines optical and atomic force microscopy.
Researchers have created a proof of concept for MOSFETs using the deep depletion regime in bulk-boron-doped diamond, increasing hole channel carrier mobility by an order of magnitude. This enables more efficient power electronics and paves the way for fully exploiting diamond's potential in MOSFET applications.
Researchers successfully controlled electrons in graphene using a high-tech microscope, paving the way for novel electronic devices. This breakthrough could lead to ultra-fast transport of electrons with low energy loss in applications such as transistors and sensors.
A Concordia University study published in Nature Communications reveals the potential for ultra-smart transistors that harness the quantum nature of electrons. Researchers have made a breakthrough in controlling electron behavior within nanoelectronics, showing new engineering possibilities for two-in-one quantum electronic devices.
KAUST researchers have demonstrated a scalable, efficient alternative technology to traditional electrical transistors, using mechanical vibrations excited by multifrequency electrical inputs. This novel technique enables the cascading of logic gates, resulting in lower complexity and higher integration densities.
A US-based research team has demonstrated optical and electrical bistability for switching in a single transistor, offering potential solutions to the bandwidth limitations of electronic computers. The study showcases the control of transistor laser electrical and optical bistabilities by base current and collector voltage.
Researchers at IBS developed first 2D field-effect transistor made of single material, overcoming efficiency limits of current 3D transistors. The new technique uses a polymorphic material, molybdenum telluride (MoTe2), to produce both metal and semiconductor components with low contact resistance.
Researchers from North Carolina State University have developed a new manufacturing process called PRESiCE, which enables the mass production of silicon carbide (SiC) power devices. This process reduces the cost of SiC devices by up to 1.5 times that of silicon-based devices, making them more competitive in the market.
Researchers successfully manipulated graphene's electronic structure to create faster and more reliable transistors. The work guides the use of rare-earth metal ions to modify graphene's band gap, enabling new applications in spintronics.
Researchers at Stanford University have discovered two semiconductors that can form high-quality insulators when exposed to oxygen, a trait shared by silicon but not other semiconductors. The new materials can be shrunk to atomic thinness and require less energy than silicon circuits, making them ideal for future devices.
Researchers at Louisiana State University and Tulane University have observed topological behavior in a magnet, Sr1-yMn1-zSb2, which displays nearly massless electronic charge carriers. This discovery holds promise for novel device concepts with reduced power consumption and heat production.
Researchers at the University of Hamburg have developed a new transistor concept based on metal nanoparticles, which exhibit energy gap properties due to Coulomb repulsion. This approach enables scalable synthesis, high-quality thin films and flexible devices with adjustable electrical characteristics.
Researchers at UC San Diego developed a temperature sensor that runs on 113 picowatts of power, reducing energy consumption by 628 times. The technology can enable new devices powered by harvesting energy from low-power sources.
Researchers at Linköping University have successfully applied a thin layer of a ferroelectric material to control electronic nonlinearity in ion-doped conducting polymers. This breakthrough enables precise switching of transistors and color changes in displays, opening up new possibilities for applications in printed electronics.