Researchers from the University of Surrey have developed a pioneering circuit design using source-gated transistors to create compact circuit blocks. This innovative design improves performance, reduces waste and makes manufacturing more cost-effective.
Researchers at Skoltech have designed a photosensitive bismuth complex that can be used as an advanced optically triggered material for memory devices. The device can switch between two quasi-stable electrical states in response to light and electric bias, enabling high-density data recording.
Scientists at TU Dresden and HZDR successfully imitated brain neuron functioning using semiconductor materials. This development enables more efficient and intelligent computing, with potential applications in areas such as robotics and image recognition.
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Researchers at Linköping University have developed an organic electrochemical transistor to study extracellular electron transfer in bacteria. They successfully detect and amplify the signal, allowing for detailed analysis of charge release by bacteria.
KAUST scientists create first water-stable, n-type semiconducting polymer doped with ammonium salt, enabling stable conversion of ionic signals into electronic signals. The innovation has potential applications in glucose sensors, enzymatic fuel cells and monitoring ion channel activity.
Researchers create memristors on a single chip, enabling small, portable AI devices to recognize objects and make decisions in real-time. The design could advance the development of neuromorphic computing and enable powerful, portable computing devices that don't rely on supercomputers or the Internet.
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A team of scientists at Lancaster University has discovered a single molecule that can act like a transistor and store binary information. The molecule, which is around five square nanometres in size, could potentially offer information density of 250 terabits per square inch.
Researchers at MIT demonstrate the mass production of carbon nanotube field-effect transistors (CNFETs) using a commercial manufacturing facility. This breakthrough enables the creation of 3D microprocessors with unprecedented energy efficiency and performance, potentially surpassing silicon-based technology.
A new gallium oxide-based transistor can handle more than 8,000 volts, surpassing silicon and other mature technologies. This breakthrough could lead to smaller, more efficient electronic systems that improve the range of electric cars, locomotives, and airplanes.
A team of physicists at the University of Arizona discovered a thin layer of iron oxide that explains a long-standing puzzle in magnetic tunnel junctions, which could lead to faster and more efficient spintronics. The finding opens up new possibilities for developing this technology, potentially revolutionizing computing.
Researchers at Stevens Institute of Technology have developed an atomically thin magnetic semiconductor that enables faster processing speed, less energy consumption and increased storage capacity. The material works at room temperature and can be integrated with existing semiconductor technology.
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A team of researchers at Carnegie Mellon University is working on developing nanoscale mechanical switches to address the limitations of solid state switches. These switches have the potential to improve energy efficiency and complement existing solid-state technology in various applications.
Physicist Esther Wertz receives NSF CAREER award to investigate nanometer-scale metal structures controlling light at the quantum limit. Her work aims to create a single photon transistor by manipulating quantum states without destroying superposition.
Researchers have developed a new type of nanoelectromechanical relay enabling reliable high-temperature, non-volatile memory. The invention is crucial for all-electric vehicles and more-electric aircraft requiring electronics that can operate in extreme temperatures with high energy efficiency.
Researchers developed a black phosphorus transistor with 10-times lower switching power consumption and 10,000-times lower standby power consumption than conventional CMOS transistors. The transistor achieves record-low subthreshold swing values and high on-state current, paving the way to extend Moore's Law.
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A new black phosphorus transistor has been developed that shows 10-times lower switching power consumption and 10,000-times lower standby power consumption than conventional transistors. The transistor can replace CMOS transistors with fast and low-power operations.
Researchers at KAUST have developed a hybrid organic transistor for use in electronic displays and large-area electronics, overcoming production challenges of metal oxide TFTs.
Researchers created a field-effect transistor with a diameter of two nanometers using tellurium and boron nitride nanotubes. The material's unique structure allows for smaller transistors, which could lead to faster computing and reduced power consumption.
Researchers have discovered a new material that could lead to the creation of even smaller transistors, enabling faster computing and lower power consumption. The material, shaped like a one-dimensional DNA helix, is made from tellurium and can be encapsulated in nanotubes to build functional transistors.
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Scientists at Linköping University and SweGaN have developed a new method to fit together layers of semiconductors, resulting in high-breakdown thin GaN transistors. The transistors can withstand high voltages due to the gradual absorption of strain between layers.
Purdue University engineers develop a way to combine transistors with ferroelectric RAM, overcoming decades-old challenges. The new technology uses alpha indium selenide material to create a semiconductor field-effect transistor that can process and store information.
A Rutgers-led study reports the first experimental measurement of how bending organic semiconductors affects electricity flow, showing a 1 percent bend can double electron speed.
Researchers created a high-electron mobility transistor with record-low gate leakage current, high on/off current ratio, and high current gain cutoff frequency. The device has the potential to expand bandwidth for wireless communication systems, enabling more information transmission in less battery life.
The ETH Zurich team's project, 'A Data-Centric Approach to Extreme-Scale Ab initio Dissipative Quantum Transport Simulations,' developed a new framework called DaCe OMEN for simulating heat in transistors. The simulation achieved a two-orders-of-magnitude speedup and can help design better computer chips.
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Researchers at Aalto University and Nagoya University have developed a new method to make ultra-clean carbon nanotube transistors with superior semiconducting properties. The new method produces hundreds of individual devices within 3 hours, reducing processing time and increasing efficiency.
Engineers at University of Michigan have developed a 3D transistor array design that integrates high-voltage devices with low-voltage silicon chips, enabling more compact and functional chips. This breakthrough paves the way for individual transistors to handle both digital and analog signals, overcoming current limitations.
Researchers at Linköping University and RISE have developed a process to print complete integrated circuits with over 100 organic electrochemical transistors. The technology uses screen printing and can be used to power devices such as displays and sensors.
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Scientists have developed a protocol to measure ultrafast electronic dynamics with picosecond resolution, revealing the spatial oscillation of electrons at sub-terahertz frequencies. The detection scheme utilizes a quantum-mechanical resonant state formed beside the trap, providing new insights into nano-electronics and quantum computing.
Researchers at the University of Texas at Austin have discovered a new material, 2D antimony, which holds promise for manufacturing even smaller computer chips. The material has high charge mobility, making it a suitable alternative to silicon, and its properties could lead to the discovery of even better materials.
A new method uses isomaltodextrin, a cheap and widely available polysaccharide, to separate semiconducting from metallic single-wall carbon nanotubes. The purified semiconducting SWCNTs were found to improve the performance of thin-film transistors in LCD displays.
A team of researchers has developed a robotic device that can mimic the sensory function of human skin, allowing it to sense touch and respond accordingly. The device, which features a stretchable transistor, represents a significant step towards creating prosthetics that can directly connect with peripheral nerves.
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Researchers from MLU Halle have created a patented concept for novel diodes and transistors that utilize spintronics to improve energy efficiency. The new components combine data processing and storage with no energy loss, offering flexible reconfigurability.
A research team developed the world's thinnest and lightest differential amplifier for bioinstrumentation, amplifying weak biosignals with reduced disturbance noise. The flexible organic amplifier can be attached to human skin without discomfort, enabling real-time long-term monitoring of electrocardiac signals.
Researchers at Tufts University developed transistors made from linen thread, enabling the creation of fully flexible devices with superior flexibility and material diversity. The device can be woven into fabric or worn on the skin, allowing for seamless integration with biological tissues.
KAUST researchers have developed a single microchip that integrates sensing, energy-harvesting, current-rectifying, and energy-storage functions. The chip uses ruthenium oxide as the common electrode material, enabling miniaturization of self-powered sensor devices.
Scientists at TU Wien have created an ultra-thin transistor with excellent electrical properties using calcium fluoride as a novel insulator, enabling miniaturization to an extremely small size. The technology has the potential to revive Moore's Law, leading to faster and more powerful computer chips.
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KIST researchers created a fibrous transistor that maintains functionality even after washing and bending. The device overcomes limitations of current electronic textiles, enabling the development of next-generation wearable computers and smart clothing.
A research group at The University of Tokyo developed a more efficient insulated gate bipolar transistor (IGBT), which can switch high voltages at lower operating voltages, reducing power consumption and increasing energy efficiency. The IGBT achieved stable switching at just 5V, a significant improvement over previous performance limits.
Researchers developed a novel configuration of zinc oxide to enable multi-level logic behavior, increasing processing capacity without adding more transistors. The technology bridges the gap between conventional computers and quantum computers, which could solve certain problems faster.
Researchers successfully introduced carbon atoms into tungsten disulfide, creating an ambipolar semiconductor with bipolar effect. The technique enables the production of new components for energy-efficient devices with improved conductivity and catalytic activity.
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Researchers at Columbia Engineering developed a two-step, ultra-clean nanofabrication process that separates the pristine device from dirty fabrication processes. This method yields high-performance devices with improved stability and scalability for real-world engineering problems.
LaViers' paper presents a simplified counting model that compares the expressive capabilities of robots and natural beings, revealing trends in robotic capacity. The research shows that robots perform similarly to a microscopic worm, highlighting the need for improvement in mimicking nature in robotics.
Researchers from NYU introduce a voltage-controlled topological spin switch (vTOPSS) that reduces heat generated and energy used in computing. The new method enables faster and more secure computing by replacing traditional silicon transistors, increasing functionality and circuit design possibilities.
A new CRISPR-based device, CRISPR-Chip, can detect specific genetic mutations in a matter of minutes. The device uses graphene transistors to scan DNA samples and report results electronically, bypassing the need for polymerase chain reaction amplification.
Researchers have developed an organic transistor that can operate efficiently under various current densities, opening up potential applications in OLEDs, sensors, and memristive elements. The device combines high currents with low-voltage operation, making it suitable for artificial synapses and other contexts.
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Researchers at University of California, Davis and Maynooth University created programmable DNA molecules that can self-assemble into patterns by running their own program. They designed and ran 21 algorithms, demonstrating the potential of the system for sophisticated molecular engineering.
Negative capacitance field-effect transistors (NC-FETs) have been proposed as a way to make traditional transistors more efficient by adding a thin layer of ferroelectric material. The technology has the potential to transform the semiconductor industry and enable chips that compute far more while requiring less frequent charging.
Researchers at Tokyo Tech report a unipolar n-type transistor with electron mobility of up to 7.16 cm2 V-1 s-1, exceeding previous results by 40%. The material achieves this performance through fine-tuning the backbone conformation and introducing vinylene bridges.
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Researchers have developed biocompatible ion-driven transistors that can record high-quality neural signals, suitable for advanced data processing. The transistors' channel is made from fully biocompatible materials, enabling efficient communication with neural signals.
Researchers at Rice University have developed a new PUF technology that provides a leap in reliability for IoT devices. The technology uses microchip physical imperfections to produce unique security keys, making it ideal for authentication and encryption.
Scientists at Linköping University have developed an organic electrochemical transistor that can learn and create new connections, similar to the human brain. The transistor uses a unique material called ETE-S, which allows it to adapt to changing input signals, enabling the creation of new connections.
Researchers at FAU developed a simple yet accurate method to find interface defects in silicon carbide transistors. This allows for improved and shorter innovation cycles in developing more energy-saving power electronics.
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Researchers at Kansas State University have made a groundbreaking discovery in developing ultra-low noise, high-performance transistors using two-dimensional atomic thin materials. The breakthrough could pave the way for innovative technologies in electronics and sensing.
Researchers elucidated the operation mechanism of ferroelectric-HfO2-based transistors and memories, enabling sub-60mV/dec subthreshold slope and high-capacity nonvolatile storage. The study's findings will guide device design for ultralow power operating NCFETs and high-capacity FTJ memories.
The development of a vertical Ga2O3 metal-oxide-semiconductor field-effect transistor enables higher current drives without enlarging chip size, simplified thermal management, and improved field termination. The device shows decent electrical properties, paving the way for new generations of low-cost power electronic devices.
Researchers at University of Notre Dame have developed a new mathematical approach to solve NP-hard problems using analog computing. The 'solver' has the potential to find better and possibly faster solutions than digital computers for complex optimization problems.
Researchers have successfully switched a material between two states of matter via application of an electric-field, paving the way for a functioning topological transistor. This breakthrough could enable ultra-low energy electronics to continue growing without being limited by available energy.
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Researchers have demonstrated electronic switching in an exotic, ultrathin material at room temperature, reducing energy loss and increasing efficiency for transistors. The breakthrough uses sodium bismuthide (Na3Bi), a 'topological Dirac semimetal' that can be tuned to behave like a conventional or topological material.
Researchers propose using multiferroics and topological materials to create logic and memory devices that are 10-100 times more energy-efficient than current microprocessors. This could enable significant advancements in computing power, particularly for applications like self-driving cars and drones.
A team of scientists and engineers at the University of Illinois has developed a new technique for creating nanoscale-size electromechanical devices by using graphene as an etch stop. This allows for precise patterning of two-dimensional structures, enabling the creation of complex devices with improved performance.