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Taking 2D materials for a spin

Researchers at the University of Tsukuba successfully detect and map electronic spins in a working transistor made of molybdenum disulfide. This breakthrough could lead to the development of faster spintronic computers that exploit electrons' natural magnetism.

SourceUniversity of Tsukuba·JournalCommunications Materials·DateMar 5, 2021

Theory could accelerate push for spintronic devices

Rice University scientists develop a new theory that can help identify materials for advanced spintronic devices, which depend on electron spin states. The theory predicts heteropairs of two-dimensional bilayers that enable large Rashba splitting, making room-temperature spin transistors possible.

SourceRice University·JournalJournal of the American Chemical Society·DateFeb 25, 2021

Flexible and powerful electronics

Researchers at University of Tsukuba develop a new carbon-based electrical device, π-ion gel transistors (PIGTs), with improved conductivity. The innovative technology may lead to the creation of flexible electronics and efficient photovoltaics.

SourceUniversity of Tsukuba·JournalAdvanced Materials·DateDec 16, 2020

Liquid metals come to the rescue of semiconductors

Scientists at UNSW have created a method to produce high-quality two-dimensional MoS2 semiconductors without grain boundaries. By using gallium metal in its liquid state, researchers were able to form the desired MoS2 material on an atomically smooth surface, paving the way for ultra-low energy electronics with fast switching speeds.

Printing organic transistors

Scientists at the University of Tokyo have created a new method for printing organic transistors, which could lead to the development of new display technologies and wearable electronic products. The breakthrough uses a lyophobic surface and a special U-shaped metal-film pattern to create uniformly grown semiconductor films.

SourceUniversity of Tokyo·JournalScience Advances·DateOct 7, 2020

All-2D light-emitting field-effect transistors

Researchers have developed a new type of transistor that can emit strong light, overcoming previous limitations. By modulating the contacts and channel with separate three gates, the polarity and light emission can be controlled, showing great promises for multi-digit logic devices and highly integrated optoelectronic circuitry.

SourceSeoul National University·JournalAdvanced Materials·DateOct 4, 2020

Physicists offer a new 'spin' on memory

A team of physicists at the University of Arizona discovered a thin layer of iron oxide that explains a long-standing puzzle in magnetic tunnel junctions, which could lead to faster and more efficient spintronics. The finding opens up new possibilities for developing this technology, potentially revolutionizing computing.

SourceUniversity of Arizona·JournalPhysical Review Letters·DateMay 15, 2020

Black phosphorous tunnel field-effect transistor as an alternative ultra-low power switch?

Researchers developed a black phosphorus transistor with 10-times lower switching power consumption and 10,000-times lower standby power consumption than conventional CMOS transistors. The transistor achieves record-low subthreshold swing values and high on-state current, paving the way to extend Moore's Law.

DNA-like material could bring even smaller transistors

Researchers have discovered a new material that could lead to the creation of even smaller transistors, enabling faster computing and lower power consumption. The material, shaped like a one-dimensional DNA helix, is made from tellurium and can be encapsulated in nanotubes to build functional transistors.

SourcePurdue University·JournalNature Electronics·DateFeb 10, 2020

New method gives robust transistors

Scientists at Linköping University and SweGaN have developed a new method to fit together layers of semiconductors, resulting in high-breakdown thin GaN transistors. The transistors can withstand high voltages due to the gradual absorption of strain between layers.

SourceLinköping University·JournalApplied Physics Letters·DateJan 7, 2020

A record-setting transistor

Researchers created a high-electron mobility transistor with record-low gate leakage current, high on/off current ratio, and high current gain cutoff frequency. The device has the potential to expand bandwidth for wireless communication systems, enabling more information transmission in less battery life.

SourceUniversity of Delaware·JournalApplied Physics Express·DateNov 26, 2019

Clean carbon nanotubes with superb properties

Researchers at Aalto University and Nagoya University have developed a new method to make ultra-clean carbon nanotube transistors with superior semiconducting properties. The new method produces hundreds of individual devices within 3 hours, reducing processing time and increasing efficiency.

SourceAalto University·JournalAdvanced Functional Materials·DateNov 19, 2019

Ultrafast quantum motion in a nanoscale trap detected

Scientists have developed a protocol to measure ultrafast electronic dynamics with picosecond resolution, revealing the spatial oscillation of electrons at sub-terahertz frequencies. The detection scheme utilizes a quantum-mechanical resonant state formed beside the trap, providing new insights into nano-electronics and quantum computing.