Articles tagged with Band Gap
Researchers at Tokyo Institute of Technology and Kyushu University have successfully synthesized a new semiconductor material that can absorb visible light, reducing its band gap from 4eV to 2eV. The material has potential applications in solar cells, photocatalysis, and pigments.
Scientists at KAUST have created a new absorber layer for perovskite solar cells using single crystals with a mixture of organic cations. This improvement increases the absorption range and enhances device performance, reaching an efficiency of 22.8 percent.
Researchers have found that using topological insulators in transistors could reduce switching energy by half and the overall energy used by each transistor by a factor of four. This breakthrough could lead to substantial reductions in computing energy consumption, as the industry continues to strive for sustainable technologies.
Researchers at KAUST have developed a novel method called thermal interdiffusion alloying (TIA) to create high-quality thin films of aluminum gallium oxide alloys. By controlling the annealing temperature and time, they achieved a record-high composition of up to 81% aluminum, resulting in a wide bandgap range.
Researchers at NIMS and Tokyo Institute of Technology have discovered a non-toxic semiconductor with a direct band gap in the near-infrared range. The compound, Ca3SiO, exhibits great potential to serve as a direct transition semiconductor, potentially replacing toxic elements like mercury and cadmium in existing infrared semiconductors.
Researchers at HZB have developed a method to control lattice vibrations in graphene, enabling the creation of phononic crystals with tunable properties. This breakthrough paves the way for applications in ultrasensitive sensors and quantum technologies.
Researchers have made the first direct measurements of the electronic band and gap of solid hydrogen up to 90 GPa using inelastic X-ray scattering. The study found that the electronic band gap decreased linearly from 10.9 eV to 6.57 eV as pressure increased, with a densification factor of 8.6.
Researchers used terahertz time-domain spectroscopy to evaluate beta-gallium oxide semiconductor material properties. The technique revealed significant findings on the fundamental properties of the material at THz frequencies, providing valuable information for future power device development.
A University of Wyoming research team has resolved the controversy over the energy gap of chromium tribromide, a van der Waals material, revealing an energy gap value of around 0.3 electron volts. The study uses scanning tunneling microscopy and spectroscopy to measure atomic resolution images and electronic properties.
Researchers have successfully stretched diamond to achieve large, uniform tensile elastic straining, opening up new possibilities for advanced functional devices. The findings suggest the potential of strained diamonds as prime candidates for microelectronics, photonics, and quantum information technologies.
Researchers discover carbyne's optical band gap is much smaller than previously thought, offering advantages for electricity conduction and future applications.
By straining diamond to change its electronic properties, researchers can dial it from insulating to highly conductive, or metallic. This breakthrough could lead to the development of new optical devices, quantum sensors, and high-efficiency solar cells.
Researchers have discovered a way to engineer diamond's electrical conductivity without altering its chemical composition. By applying mechanical strain, they can reduce the bandgap and make diamond conduct electricity like metals, paving the way for novel applications in power electronics, quantum sensing, and more.
Scientists investigate how perovskite/silicon tandem solar cells perform in sunny and hot environments, finding that the perovskite bandgap gets larger as the device heats up, allowing more stable compositions to be used.
Researchers have experimentally observed a 0D corner state in a 3D topological circuit, which is induced by the nontrivial octupole moment of the circuit. The corner state is protected by three anticommuting reflection symmetries and exhibits robustness against certain types of disorder.
An international team of researchers has observed how electronic charge excitation changes electron spin in metal oxides in an ultrafast and inphase manner. This breakthrough could lead to the development of new ultra-fast storage systems and information technologies.
Researchers successfully synthesized a pristine diamane film using high-pressure compression, demonstrating its semiconducting properties and potential applications in electronic devices. The film has an energy gap of 2.8 eV, which is higher than that of gapless graphene.
Researchers propose a novel vdW heterostructure for MIR light-emission applications using BP and TMDC materials. The BP-WSe2 heterostructure shows a type-I band alignment, enhancing MIR photoluminescence by ~200%. In contrast, the BP-MoS2 heterostructure forms a type-II band alignment, enabling efficient MIR electroluminescence.
Scientists successfully synthesized a 17-carbon wide graphene nanoribbon with the smallest bandgap seen to date among known graphene nanoribbons. This breakthrough has significant implications for the development of new electronic devices.
A new gallium oxide-based transistor can handle more than 8,000 volts, surpassing silicon and other mature technologies. This breakthrough could lead to smaller, more efficient electronic systems that improve the range of electric cars, locomotives, and airplanes.
Researchers improve photoelectrode material's performance by increasing surface roughness, resulting in higher photon-to-current conversion efficiency. The textured structure allows for multiple light passes, enhancing sunlight absorption and hydrogen generation.
Scientists have developed single-electron pumping devices in ZnO nanobelt transistors, enabling controlled single- and double-electron pumping at room temperature. This breakthrough has significant implications for spin-based quantum computing and quantum information processing.
A hybrid material has been developed that can detect a broad range of light wavelengths, from ultraviolet to near infrared, due to its small bandgap. The material's electronic properties were investigated, revealing promising results for optoelectronic applications.
A new type of solar cell with a wide bandgap perovskite material has been developed to improve efficiency and durability. The researchers achieved a 26.7% efficient power conversion rate in their double layer solar cell, with the material retaining 80% of its initial capability after 1,000 hours of continuous illumination.
Researchers at New York University develop guidelines for optimal band gap values in wide-band gap semiconductors for efficient underwater use. Various materials, such as organic and alloys, are shown to be suitable for deep waters, potentially extending the range of autonomous submersible vehicles.
Scientists have created a conducting boundary with zero bandgap in hexagonal boron nitride sheets by stacking ultrathin sheets in a particular way. This discovery could lead to the development of new all-hBN or all 2D nanoelectronic devices.
Scientists propose a new design that replaces traditional high-n materials with tunable nanolaminate layers to achieve improved performance parameters. The new coating enables larger bandwidth, higher LIDT, and smaller transmission ripples compared to traditional designs.
Scientists at HZB have measured the energy gap in a magnetically doped topological insulator, finding it to be five times larger than theoretically predicted. This discovery could lead to the creation of near-room-temperature Quantum Hall Effect devices and quantum processing units for quantum computers.
Chen WeiQiu's team discovers a way to tailor topological states in acoustic materials by selecting specific boundaries, enabling dual-channel propagation and one-way propagation of sound waves. This breakthrough leads to the design of tunable acoustic devices with new possibilities.
Purdue University engineers develop a way to combine transistors with ferroelectric RAM, overcoming decades-old challenges. The new technology uses alpha indium selenide material to create a semiconductor field-effect transistor that can process and store information.
Rice University scientists develop a unique two-dimensional material with sharp zigzag boundaries, showcasing promise for optoelectronics and advanced computing. The material's band gap can be tuned in a controllable way, opening up new avenues for research and potential applications.
Researchers observe novel phase of matter, excitonic insulator, in antimony nanoflakes, which could lead to breakthroughs in low-energy electronics. The findings provide a new strategy to search for excitonic insulators and potentially carry exotic superfluids.
Researchers at Tokyo University of Science develop novel technique to grow single crystals of IGZO-11 semiconductor. The material exhibits high conductivity, transparency, and optical band gap, making it suitable for optoelectronic devices.
A new organic semiconductor material, triazine-based graphitic carbon nitride (TGCN), has been synthesized with a band gap of 1.7 electron volts, ideal for optoelectronics applications. The material exhibits high perpendicular conductivity, 65 times greater than planar conductivity.
Researchers have developed a laser technique to permanently stress graphene into having a structure that allows the flow of electric current, opening up its use in next-generation electronics. The technique creates a tunable band gap, allowing scientists and manufacturers to control the material's properties.
A research group has shown that machine learning models are valuable when they succeed in predicting properties accurately, as well as when they fail. Analyzing exceptions to these models reveals new insights into the underlying physics of compounds, leading to discoveries of unusual structures and novel structural units.
Researchers at MIT and international partners have developed an AI-powered method to explore the possibilities of strain-engineered materials. By applying machine learning methods, they can accurately predict how different amounts and orientations of strain would affect a material's properties.
Rice University researchers have developed a nano-infused ceramic that can act as a sensor for structures, monitoring their health and reporting damage. The ceramic's unique electrical properties make it suitable for self-sensing applications in buildings, bridges, and aircraft.
Researchers assess the promise of gallium oxide as an ultrawide bandgap semiconductor, offering improved thermal management and gate dielectrics. Ga2O3's potential applications include high-voltage rectifiers in power conditioning and distribution systems, such as electric cars and photovoltaic solar systems.
Researchers have discovered that nanodiamonds can be used as photocatalysts to produce methanol from CO2 and water. The process requires UV light excitation but recent studies suggest that intermediate stages can be created in the band gap by doping with foreign atoms, enabling visible spectrum usage.
Blue phosphorus has been successfully mapped and measured by a team from HZB around Evangelos Golias, revealing a unique honeycomb structure and large semiconducting band gap of seven times larger than black phosphorus. The material's properties are influenced by the substrate, making it an essential parameter for optoelectronic applic...
Researchers used molecular dynamics to study the role of nitrogen in GaN defects. They found that nitrogen configurations exhibited significantly more states in the bandgap, potentially contributing to dislocation-related effects. This discovery could lead to optimizing GaN material for improved device performance
An inorganic semiconductor exhibits improved mechanical performance when kept in the dark, contrary to its brittleness under light exposure. The study found that zinc sulfide crystals display higher plasticity without fracture until a large strain of 45%, attributed to high dislocation mobility in complete darkness.
A Columbia University-led team developed a technique to manipulate graphene's electrical conductivity with compression, bringing it closer to being a viable semiconductor. By applying pressure, researchers increased the band gap in BN-graphene structures, effectively blocking electricity flow and creating a stronger switch.
Researchers at UConn improved the performance of an atomically thin semiconductor material by stretching it, a technique that could lead to faster computer processors and more efficient sensors. The study, published in Nano Letters, found a 100-fold increase in photoluminescence when the material was subjected to strain.
Researchers have created a wide-bandgap semiconductor called gallium oxide (Ga2O3) that can be engineered into nanometer-scale structures to facilitate high-speed electronics. The new material has demonstrated record mobilities and quantum transport properties.
Researchers at the University of Cambridge have discovered a simple potassium solution that can boost the efficiency of next-generation solar cells by up to 21.5%. The addition of potassium iodide 'heals' defects and immobilises ion movement, making the material more stable and efficient at converting sunlight into electricity.
Researchers at Rice University have discovered a four-component alloy with tunable optical properties, which could lead to more efficient solar cells and light-emitting diodes. The alloy's optical bandgap can be altered by changing the growth temperature, making it a promising material for various applications.
Researchers discovered how oxygen alters MoS2's electronic and optical properties, enabling tunable optical band gaps. This knowledge sheds light on modifying the material's properties for various applications.
Researchers successfully manipulated graphene's electronic structure to create faster and more reliable transistors. The work guides the use of rare-earth metal ions to modify graphene's band gap, enabling new applications in spintronics.
A team at Berkeley Lab has precisely measured the band gap and tuning mechanism of monolayer molybdenum disulfide, a 2-D semiconducting material. The study reveals a powerful tuning mechanism and interrelationship between electronic and optical properties.
Researchers at Carnegie Institution have synthesized pure samples of Si-III, a semiconductor with an extremely narrow band gap, narrower than diamond-like silicon crystals. This discovery may lead to unpredictable technological breakthroughs in fields like solar energy and electronics.
Researchers at Princeton University have discovered a new form of the compound GeSe with a ring type structure like graphene. The beta-GeSe compound has a unique 'boat' conformation that could provide valuable properties for electronic devices.
Researchers at UNIST have successfully fabricated the world's thinnest oxide semiconductor, just one atom thick, using atomic layer deposition on graphene. This breakthrough material has a wide band gap and high optical transparency, opening up new possibilities for flexible electronic devices.
Researchers create large sample size of ST12-germanium, confirming its semiconductor and optical properties. The material has a tetragonal structure and indirect band gap, making it suitable for infrared detection and imaging technology.
Researchers from Forschungszentrum Jülich and LMU Munich use angle-resolved photoemission spectroscopy to visualize band structure shifts in response to magnetic field changes. This observation confirms the predictions made by Einstein's theory of relativity, which suggests that electrons can sense the direction of a magnetic field.
Scientists have developed a new design for solar cells made from perovskite, achieving an average steady-state efficiency of 18.4%. The innovative tandem solar cell combines two types of perovskite into one photovoltaic cell, absorbing nearly the entire spectrum of visible light and outperforming traditional silicon-based solar cells.
Researchers directly determined the relation between bandgap energy and size/shape of individual CsPbBr3 nanocrystals, revealing effective coupling between semiconductor NCs upon close contact. This study provides unique insights into interacting behavior of neighboring NCs and paves the way for designing large quantum structures.
Researchers from Stanford and Oxford have created a novel perovskite solar cell design that converts sunlight into electricity with an efficiency of 20.3 percent, rivaling silicon solar cells on the market today.
A quantum-confined bandgap narrowing mechanism has been found to extend UV absorption into the visible light range, enabling design of high-efficiency paintable solar cells and water purification using sunlight. The researchers mixed TiO2 particles with graphene quantum dots, resulting in a composite that absorbs visible light.