A vertical trench MOSFET using a unique in-situ Mg-doped current blocking layer to enable high-voltage operation with enhanced efficiency and robustness in power electronic devices.
State University of New York (SUNY) Chancellor John B. King Jr. today announced that this technology is a recipient of the latest round of seed funding through the SUNY Technology Accelerator Fund (TAF), which provides grants to faculty inventors and scientists.
Background :
This technology addresses the need for high-voltage power devices suitable for grid and traction applications, overcoming the limitations of traditional silicon-based devices. Gallium oxide (Ga₂O₃), a wide-bandgap semiconductor, enables efficient, high-voltage operation with a reduced size and improved energy efficiency. The invention features a vertical trench MOSFET design with a unique in situ Mg-doped current-blocking layer, enabling robust performance in high-voltage applications.
Technology Overview :
This University at Buffalo and Ohio State University technology is a vertical trench MOSFET built on gallium oxide (Ga₂O₃) with a novel in situ Mg-doped current-blocking layer (CBL). This design overcomes challenges in the development of vertical power devices, particularly the lack of shallow acceptors in Ga₂O₃. The technology enables higher voltage operation with increased efficiency, robustness, and thermal performance, making it suitable for high-power applications.
Advantages :
Applications :
Intellectual Property Summary : PCT/US2025/054701 filed 11.07.2025
Stage of Development : TRL 6
Licensing Status : Available for licensing or collaboration.
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