A research team has successfully removed the primary obstacle to post-silicon computing by using a room-temperature printing process to create a record-breaking electronic connection for atomic-thin materials.
By applying a 3.6-nanometer-thick "skin" of gallium oxide GaO x between metal wires and a semiconductor sheet, the researchers achieved an electron mobility of 296 cm 2 ·V −1 ·s −1 - the highest ever recorded for this type of material.
Published in the International Journal of Extreme Manufacturing , this breakthrough significantly reduces the energy required to move electricity through a device, reaching a near-zero electrical barrier of just 3.7 meV.
Because this method uses liquid metal printing rather than high-heat industrial furnaces, it also offers a factory-ready pathway to mass-producing electronics that are faster, cooler, and more energy-efficient than anything currently on the market.
To understand why this matters, we should first know the limitations of modern silicon chips. As engineers try to make devices smaller, they have turned to two-dimensional (2D) materials like tungsten disulfide WS 2 , which are only a few atoms thick.
However, connecting these ultra-thin sheets to traditional metal electrodes is a multidisciplinary nightmare. When metal touches these 2D sheets, it often creates a "resistance wall" called a Schottky barrier that throttles electrical flow and generates wasted heat.
Previous attempts to fix this involved inserting ultra-thin insulators to act as buffers, but those materials had to be less than 1 nanometer thick to work. At that microscopic scale, even a tiny flaw in the manufacturing process can cause the entire device to fail.
Prof. Shenghuang Lin and their co-workers at the Songshan Lake Materials Laboratory and Wuhan University of Technology solved this by embracing the "defects" within their printed films. Their 3.6-nanometer gallium oxide layer is thick enough to be durable but remains electrically "transparent" because of its high concentration of oxygen vacancies - tiny microscopic gaps in the atomic lattice.
In a typical electrical connection, electrons are like travellers facing an impossible leap across a wide canyon. In this new GaO x layer, the oxygen vacancies act as molecular stepping stones. Electrons use a "hybrid tunnelling" mechanism, hopping from one vacancy to the next to cross the interface with almost no resistance.
The practical results of this "hopping" mechanism are visible in the device benchmarks. The contact resistance, the measure of how much energy is lost at the connection point, was measured at 2.38 kΩ·μm, which is two orders of magnitude lower than traditional buffered contacts.
In a factory context, this means transistors can operate at much lower voltages without sacrificing speed. Furthermore, the team demonstrated the process is scalable by printing an array of over 30 devices on a single chip, with the resulting transistors maintaining stable performance for over three months in normal air without specialized protective packaging.
Next, the researchers plan to apply this room-temperature printing to large-scale, factory-grown semiconductor wafers to ensure consistent performance across entire production batches.
By moving away from the high-heat, high-cost manufacturing of the past, engineers are now standing at the threshold of a new era where the limit of our technology is no longer how small we can build, but how fast we can print the connections between atoms.
DOI: https://iopscience.iop.org/article/10.1088/2631-7990/ae51d2
International Journal of Extreme Manufacturing (IJEM, IF: 21.3 ) is dedicated to publishing the best advanced manufacturing research with extreme dimensions to address both the fundamental scientific challenges and significant engineering needs.
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International Journal of Extreme Manufacturing
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