A research team has successfully removed the primary obstacle to post-silicon computing by creating a record-breaking electronic connection for atomic-thin materials. The new GaOx layer enables 'hybrid tunnelling' mechanism, reducing contact resistance and allowing transistors to operate at much lower voltages without sacrificing speed.
SourceInternational Journal of Extreme Manufacturing·JournalInternational Journal of Extreme Manufacturing·DateMay 8, 2026
A new manufacturing approach enables the creation of working transistors on both sides of flexible microchips, doubling computing density. The technique uses a liquid bath to detach and float ultra-thin silicon membranes, allowing for precise fabrication without harsh adhesives.
SourceInternational Journal of Extreme Manufacturing·JournalInternational Journal of Extreme Manufacturing·DateApr 13, 2026
Researchers developed high-quality Sn-based perovskite films using a bifunctional additive, achieving remarkable device performance with high mobility and excellent operational stability. The study provides insights into regulating tin-based perovskite crystallization and advancing the development of high-performance FETs.
SourceScience China Press·JournalScience Bulletin·TypeExperimental study·DateSep 30, 2025
Researchers at the University of Tokyo have developed a new transistor design using gallium-doped indium oxide, achieving high mobility and reliable performance. The gate-all-around structure enhances efficiency and scalability, making it suitable for big data and AI applications.
SourceInstitute of Industrial Science, The University of Tokyo·DateJun 6, 2025
Apple Watch Series 11 (GPS, 46mm)
Apple Watch Series 11 (GPS, 46mm) tracks health metrics and safety alerts during long observing sessions, fieldwork, and remote expeditions.
Scientists have successfully created nanoislands on silicon that can be controlled by an external electric field. These nanoislands exhibit swirling polar textures with promise for future applications in ultra-high-density data storage and energy-efficient transistors.
SourceHelmholtz-Zentrum Berlin für Materialien und Energie·JournalNature Communications·TypeExperimental study·DateJan 20, 2025
Researchers at Peking University developed a heterojunction-gated field-effect transistor for high sensitivity in short-wave infrared detection, achieving a specific detectivity above 1014 Jones at 1300 nm. The detector can detect weak infrared radiation levels of 0.46 nW cm−2, making it capable of starlight vision.
SourcePeking University·JournalAdvanced Materials·DateDec 26, 2024
A study led by IBEC has developed a new methodology to map the local electrical potential along the structure of organic transistors used in bioelectronics. This allows for a detailed assessment of bottlenecks in charge transport, enabling optimization and enhancement of device operation.
SourceInstitute for Bioengineering of Catalonia (IBEC)·JournalAdvanced Materials·TypeExperimental study·DateJan 31, 2024
Scientists at Tohoku University successfully developed a room-temperature terahertz-wave detector using 2D plasmons, overcoming key bottlenecks in conventional detectors. The breakthrough enhances detection sensitivity by over an order of magnitude, enabling faster and more sensitive THz wave detection.
SourceTohoku University·JournalNanophotonics·DateDec 28, 2023
A team of UCLA researchers has developed a stable and fully solid-state thermal transistor that uses an electric field to control heat movement in semiconductor devices. The device boasts record-high performance with switching speeds over 1 megahertz and tunability of up to 1,300%.
SourceUniversity of California - Los Angeles·JournalScience·TypeExperimental study·DateNov 2, 2023
Fluke 87V Industrial Digital Multimeter
Fluke 87V Industrial Digital Multimeter is a trusted meter for precise measurements during instrument integration, repairs, and field diagnostics.
Scientists have successfully fabricated centimeter-scale transition metal dichalcogenide field-effect transistors with low ohmic contact resistance close to the quantum limit. The devices exhibited an ultrahigh current on/off ratio of ~10^11 at 15 K, outperforming previous values.
SourceInstitute for Basic Science·JournalNature Nanotechnology·TypeExperimental study·DateSep 4, 2023
A new FE-FET design demonstrates record-breaking performances in computing and memory, achieving large memory window with impressively small device dimensions. The combination of molybdenum disulfide and aluminum scandium nitride materials enables energy-efficient devices for both computing and non-volatile memory applications.
SourceUniversity of Pennsylvania School of Engineering and Applied Science·JournalNature Nanotechnology·DateJul 13, 2023
A team of SUTD researchers discovered a novel intrinsic nonlinear planar Hall effect, proposing a mechanism to characterize novel materials and their complex behaviors. This effect could lead to new designs in nonlinear rectifiers or terahertz detectors for long-range communications.
SourceSingapore University of Technology and Design·JournalPhysical Review Letters·DateJun 20, 2023
SAMSUNG T9 Portable SSD 2TB
SAMSUNG T9 Portable SSD 2TB transfers large imagery and model outputs quickly between field laptops, lab workstations, and secure archives.
Researchers at Tokyo Medical and Dental University developed a new technique to detect breast cancer-related markers using transistors, offering a less invasive method for monitoring patients. The system successfully detected epidermal growth factor receptor expression on cancer cells.
SourceTokyo Medical and Dental University·JournalJournal of the American Chemical Society·DateOct 31, 2022
The study observes electric gate-controlled exchange-bias effect in van der Waals heterostructures, enabling scalable energy-efficient spin-orbit logic. The team successfully tunes the blocking temperature of the EB effect via an electric gate, allowing for the EB field to be turned 'ON' and 'OFF'.
SourceARC Centre of Excellence in Future Low-Energy Electronics Technologies·JournalACS Nano·TypeExperimental study·DateAug 7, 2022
Researchers at Rensselaer Polytechnic Institute have successfully controlled electron spin at room temperature, a crucial step towards developing more efficient and faster devices. The discovery uses a unique ferroelectric van der Waals layered perovskite crystal to harness the Rashba or Dresselhaus spin-orbit coupling effect.
SourceRensselaer Polytechnic Institute·JournalNature Photonics·DateJul 14, 2022
Researchers have confirmed a novel quantum topological material for ultra-low energy electronics, reducing energy consumption by a factor of four. The study reveals the potential of zigzag-Xene-nanoribbons to make topological transistors with robust edge states and low threshold voltage.
SourceARC Centre of Excellence in Future Low-Energy Electronics Technologies·JournalApplied Physics Reviews·TypeExperimental study·DateMar 8, 2022
Apple AirPods Pro (2nd Generation, USB-C)
Apple AirPods Pro (2nd Generation, USB-C) provide clear calls and strong noise reduction for interviews, conferences, and noisy field environments.
Researchers at NIST have revived and improved the charge pumping method to detect single defects as small as one-tenth of a billionth of a meter. The new technique can indicate where defects are located in transistors, enabling accurate assessment of their impact on performance.
SourceNational Institute of Standards and Technology (NIST)·JournalApplied Physics Letters·TypeExperimental study·DateFeb 4, 2022
Researchers have discovered that negative capacitance in topological transistors can switch at lower voltage, potentially reducing energy losses. This new design could help alleviate the unsustainable energy load of computing, which consumes about 8% of global electricity supply.
SourceARC Centre of Excellence in Future Low-Energy Electronics Technologies·TypeExperimental study·DateDec 15, 2021
The Hong Kong University of Science and Technology (HKUST) team has made a breakthrough in developing miniaturized organic semiconductors for flexible electronics. The new device demonstrates a record low contact resistance, enabling significant power savings and reduced heat generation.
SourceThe University of Hong Kong·JournalAdvanced Materials·DateOct 8, 2020
Apple iPhone 17 Pro
Apple iPhone 17 Pro delivers top performance and advanced cameras for field documentation, data collection, and secure research communications.
Researchers at Penn State have developed a near broken-gap tunnel field effect transistor (TFET) that uses quantum mechanical tunneling to provide high current at low voltage. This breakthrough device has the potential to replace current CMOS transistors in energy-constrained applications.
Researchers at Duke University have developed a new type of nanotube transistor that uses an electrically conducting polymer gate to reduce power demand and improve device performance. The innovation offers great promise for future electronic devices, including those even smaller than current models.