Articles tagged with Field Effect Transistors
Researchers developed high-quality Sn-based perovskite films using a bifunctional additive, achieving remarkable device performance with high mobility and excellent operational stability. The study provides insights into regulating tin-based perovskite crystallization and advancing the development of high-performance FETs.
Researchers at the University of Tokyo have developed a new transistor design using gallium-doped indium oxide, achieving high mobility and reliable performance. The gate-all-around structure enhances efficiency and scalability, making it suitable for big data and AI applications.
Scientists have successfully created nanoislands on silicon that can be controlled by an external electric field. These nanoislands exhibit swirling polar textures with promise for future applications in ultra-high-density data storage and energy-efficient transistors.
Researchers at Peking University developed a heterojunction-gated field-effect transistor for high sensitivity in short-wave infrared detection, achieving a specific detectivity above 1014 Jones at 1300 nm. The detector can detect weak infrared radiation levels of 0.46 nW cm−2, making it capable of starlight vision.
A study led by IBEC has developed a new methodology to map the local electrical potential along the structure of organic transistors used in bioelectronics. This allows for a detailed assessment of bottlenecks in charge transport, enabling optimization and enhancement of device operation.
Scientists at Tohoku University successfully developed a room-temperature terahertz-wave detector using 2D plasmons, overcoming key bottlenecks in conventional detectors. The breakthrough enhances detection sensitivity by over an order of magnitude, enabling faster and more sensitive THz wave detection.
A team of UCLA researchers has developed a stable and fully solid-state thermal transistor that uses an electric field to control heat movement in semiconductor devices. The device boasts record-high performance with switching speeds over 1 megahertz and tunability of up to 1,300%.
Scientists have successfully fabricated centimeter-scale transition metal dichalcogenide field-effect transistors with low ohmic contact resistance close to the quantum limit. The devices exhibited an ultrahigh current on/off ratio of ~10^11 at 15 K, outperforming previous values.
A new FE-FET design demonstrates record-breaking performances in computing and memory, achieving large memory window with impressively small device dimensions. The combination of molybdenum disulfide and aluminum scandium nitride materials enables energy-efficient devices for both computing and non-volatile memory applications.
A team of SUTD researchers discovered a novel intrinsic nonlinear planar Hall effect, proposing a mechanism to characterize novel materials and their complex behaviors. This effect could lead to new designs in nonlinear rectifiers or terahertz detectors for long-range communications.
Researchers at Tokyo Medical and Dental University developed a new technique to detect breast cancer-related markers using transistors, offering a less invasive method for monitoring patients. The system successfully detected epidermal growth factor receptor expression on cancer cells.
The study observes electric gate-controlled exchange-bias effect in van der Waals heterostructures, enabling scalable energy-efficient spin-orbit logic. The team successfully tunes the blocking temperature of the EB effect via an electric gate, allowing for the EB field to be turned 'ON' and 'OFF'.
Researchers at Rensselaer Polytechnic Institute have successfully controlled electron spin at room temperature, a crucial step towards developing more efficient and faster devices. The discovery uses a unique ferroelectric van der Waals layered perovskite crystal to harness the Rashba or Dresselhaus spin-orbit coupling effect.
Researchers have confirmed a novel quantum topological material for ultra-low energy electronics, reducing energy consumption by a factor of four. The study reveals the potential of zigzag-Xene-nanoribbons to make topological transistors with robust edge states and low threshold voltage.
Researchers at NIST have revived and improved the charge pumping method to detect single defects as small as one-tenth of a billionth of a meter. The new technique can indicate where defects are located in transistors, enabling accurate assessment of their impact on performance.
Researchers have discovered that negative capacitance in topological transistors can switch at lower voltage, potentially reducing energy losses. This new design could help alleviate the unsustainable energy load of computing, which consumes about 8% of global electricity supply.
The Hong Kong University of Science and Technology (HKUST) team has made a breakthrough in developing miniaturized organic semiconductors for flexible electronics. The new device demonstrates a record low contact resistance, enabling significant power savings and reduced heat generation.
Researchers at Penn State have developed a near broken-gap tunnel field effect transistor (TFET) that uses quantum mechanical tunneling to provide high current at low voltage. This breakthrough device has the potential to replace current CMOS transistors in energy-constrained applications.
Researchers at Duke University have developed a new type of nanotube transistor that uses an electrically conducting polymer gate to reduce power demand and improve device performance. The innovation offers great promise for future electronic devices, including those even smaller than current models.