Articles tagged with Spintronics
Researchers have developed a new manganese-based material that can store data at higher temperatures than existing iron-based materials. This breakthrough in spintronics allows for the creation of more efficient data storage devices.
A team of researchers from Science Tokyo has developed a new method to reversibly switch the chirality of semiconductor materials using electrochemistry. This innovation enables the creation of spin-polarized currents in layered non-chiral semiconductors, opening up new directions for developing ultrafast and energy-efficient devices.
Researchers develop a new strategy to control electronic and magnetic properties of oxide thin films through nanoparticle exsolution, resulting in giant insulator-to-metal transition and room-temperature superparamagnetism
A nonvolatile phase-programmable spintronic terahertz emitter has been developed, allowing for ultrafast programming of terahertz wave phases. The device demonstrates reversible write-read-reset processes and spatial terahertz phase patterning with high signal-to-noise ratios.
A Japan-US collaborative team has developed the world's first integrated spintronic probabilistic bit on a silicon chip, paving the way for large-scale spintronic p-computers. The innovation addresses computational problems requiring parallel processing of enormous numbers of possible states.
A new approach to guiding spin waves around sharp corners has been developed, resulting in a significant boost in signal strength. The innovation uses a two-dimensional magnonic crystal with a copper film perforated with holes, creating a 'complete magnonic bandgap' that reflects spin waves.
Researchers developed high-performance catalysts that convert ortho hydrogen to para hydrogen before liquefaction, reducing energy release and partial vaporization of liquid hydrogen. This innovation is expected to contribute to the development of a hydrogen economy in Japan.
Researchers at KTH Royal Institute of Technology have found a new, potentially more energy-efficient way to transmit information in electronic systems. By twisting two layers of certain atom-thin magnetic materials, they can generate and control magnetic signals without relying on electrical currents.
Researchers at Rice University have engineered a new multiferroic material that exhibits orders of magnitude higher performance at room temperature than its parent material. The new material shows a 10-fold increase in magnetization and a 100-fold increase in magnetoelectric coupling, making it promising for low-energy computing.
A team has successfully tracked the rapid change in magnetic order in a ferro-antiferromagnetic bilayer system after a short laser pulse excited the system. The study, conducted at BESSY II, reveals that the excitation is transported from hot electrons in the ferromagnetic metal to spins in the antiferromagnet.
A research team from China has developed a material with high charge-to-spin conversion efficiency, achieving record-breaking performance in spintronic devices. The discovery utilizes nonsymmorphic symmetry to stabilize the material and enables ultra-low power magnetic switching.
Researchers at DTU have developed a new magnetic material that features a stable internal magnetic structure and almost no external magnetic field, above room temperature. This could enable faster components and lower energy consumption in spintronics.
Researchers found that electron spin interacts differently with mirror-image molecules, causing small but meaningful differences in behavior during dynamic processes. This asymmetry could lead to the dominance of a single 'hand' in biology, offering a possible route toward understanding how one molecular form came to dominate.
Researchers at Tohoku University successfully measured the attempt time in nanomagnets for the first time, finding it to be 4-11 nanoseconds. This value can serve as a more accurate foundation for developing and evaluating the stability of magnetic devices.
Researchers at Indian Institute of Science have devised a method to grow high-quality 2D magnetic materials over centimetre-scale wafers, paving the way for their integration into next-generation electronics. The technique uses Physical Vapour Transport Deposition and enables scalable fabrication with minimal surface roughness.
Researchers at Tohoku University discovered a way to control tiny magnetic properties using electric current, paving the way for new computing technologies. This approach stabilizes spins in energetically unfavorable states, allowing for more flexible data storage.
Researchers at the University of Manchester found that large-area MoS₂ reduces energy loss in magnetic memory films by altering the film's internal crystal structure. This effect is not confined to laboratory-scale samples and has implications for real, scalable spintronic technologies.
Researchers at Tohoku University discovered that antiferromagnets can exhibit a liquid-crystal state under an electric current, directly detectable as an electrical resistance change. This phenomenon has the potential to provide qualitatively new device functions.
A new study by MANA demonstrates that strongly correlated insulators can behave differently, allowing spin and charge excitations to exist independently. This enables the creation of new electronic modes that actively modify band structures under external stimuli.
Physicists at the University of Utah have developed a new, streamlined system for generating orbital angular momentum in electrons, allowing for cheaper and more abundant materials. The innovation uses natural symmetry and vibrations of atoms to control electron momentum.
Researchers have uncovered a dense network of magnetic nodal lines in cobalt, which are intrinsically spin-polarised and give rise to fast, topologically robust charge carriers. These unique properties open new perspectives for exploiting magnetic topological states in future information technologies.
A new regenerator material composed solely of copper, iron, and aluminum can achieve cryogenic temperatures without using rare-earth metals or liquid helium. The material utilizes a special property called frustration found in magnetic materials to demonstrate practical-level performance.
Chiral phonons can generate orbital currents in common crystal materials without needing magnetic elements, offering a promising path to developing less expensive and energy-efficient orbitronic devices. This breakthrough is made possible by the intrinsic magnetism of chiral phonons, which allows them to convert into orbital current.
Researchers present novel theoretical framework explaining non-monotonic temperature dependence and sign reversal of chirality-related AHE in highly conductive metals. The study reveals clear picture of unusual transport phenomena, forming foundation for rational design of next-generation spintronic devices and magnetic quantum materials.
Scientists introduce a groundbreaking approach to generate significant photocurrents from perfectly symmetric materials by engineering surface electronic states. This discovery opens new pathways for designing ultrafast spintronic devices and energy harvesting systems.
Researchers have discovered a unique cobalt-based molecule that can function as a spin quantum bit, providing a new design strategy for molecular materials used in quantum information technologies. The molecule exhibits slow magnetic relaxation and delocalized electron spins, allowing it to stabilize the quantum state.
Researchers develop record-high circular polarization of 25.3% in GaN-based spin-LEDs using multi-periodic spin tunnel junction, enabling zero-field spin-LED performance. The design harnesses topological spin textures for controlling electrons and filtering, achieving a breakthrough in device operation.
Researchers have demonstrated altermagnetism in RuO₂ thin films, a promising new magnetic material for high-speed, high-density memory devices. The discovery overcomes limitations of conventional ferromagnets and has the potential to enable more energy-efficient information processing.
A team of researchers at Waseda University has discovered a new correlation between spins, orbitals, and lattice distortions in spinel-type compounds. Magnetic ordering can trigger Jahn-Teller distortions through spin-orbit coupling.
Researchers at AIMR and UC Santa Barbara develop a breakthrough digital p-bit design that eliminates bulky analog components, enabling self-organizing hardware-based probabilistic computing. This advances applications in AI, logistics, scientific discovery, and future computing systems.
Scientists successfully visualize two distinct mechanisms of magnetism switching in antiferromagnets, providing insights into ultrafast magnetic memory and logic devices. The findings suggest that the material itself could switch even faster under appropriate conditions.
Researchers propose combining altermagnetism with molecular ferroelectrics for precise spin polarization control. This breakthrough enables electrically writable, multi-level magnetic memories and ultra-low-power spintronic devices.
Synchrotron radiation sources provide a toolkit for characterizing quantum materials and devices, enabling precise control over quantum systems. Key methods include non-destructive imaging and X-ray diffraction.
Researchers at Waseda University have demonstrated a transformative approach for realizing skyrmion logic based on fluidic principles, utilizing the flow behavior of many skyrmions to simplify device operations. This breakthrough enables the development of nanofluidic logic gates with reduced complexity and improved stability.
The study definitively resolves the controversy by capturing complete two-dimensional snapshots of electron spin and orbital shape on the Au(111) Shockley surface state. The experiment unambiguously confirms the Rashba effect, establishing a robust reference dataset for spin-resolved photoemission.
A research team has taken a major step forward in spintronics by discovering dual torque from electron spins driving magnetic domain wall displacement. This breakthrough could lead to the development of high-speed, energy-efficient memory chips using artificial antiferromagnetic materials.
Researchers at Kyushu University have developed a new method to build more energy-efficient magnetic random-access memory (MRAM) using thulium iron garnet. The team successfully produced thin films of platinum on the TmIG material, enabling high-speed and low-power information rewriting at room temperature.
Scientists observed tiny but spontaneous distortions in the crystal lattice of Cu_xBi_2Se_3 as it entered a superconducting state. This marks the first clear evidence of a topological superconductor coupling to the crystal lattice, advancing understanding of exotic electronic states.
Scientists successfully created three-dimensional skyrmion tubes in synthetic antiferromagnets, which move differently than two-dimensional counterparts. This breakthrough enables the potential for a third dimension of data storage, essential for brain-inspired computing and quantum computing.
Researchers have discovered remarkable spin-related material properties of Germanium-Tin (GeSn) semiconductors, which may offer advantages over conventional materials in quantum computing and spintronics. GeSn alloys provide low in-plane heavy hole effective mass, large g-factor, and anisotropy, making them promising for qubits and low...
Scientists developed a custom Kelvin probe force microscopy system to study the chiral-induced spin selectivity effect in chiral halide perovskites. The study reveals nanoscale 'spin maps' that show the strength and spatial uniformity of the CISS effect.
Scientists at OIST use advanced spectroscopy to track the evolution of dark excitons, overcoming the fundamental challenge of accessing these elusive particles. The findings lay the foundation for dark valleytronics as a field, with potential applications in quantum information technologies.
Scientists have found a new way to manipulate electron transport by exploiting the orbital magnetization of ferromagnetic oxide films. This discovery reveals unexpected electronic behaviors and opens new avenues for designing materials like magnetic sensors with tailored properties.
Researchers at Kobe University investigated how different manufacturing techniques affect the electronic structure of magnetic tunnel junctions. They found that the surface of ferromagnets is different when insulators are transferred to them compared to growing crystals on insulator flakes. This difference influences device behavior, p...
Researchers developed a high-entropy oxide tunnel barrier for MTJs, demonstrating stronger perpendicular magnetization and lower electrical resistance. This breakthrough may lead to smaller, faster, and more efficient hard disk drives and magnetoresistive random access memory devices.
Researchers provide experimental evidence for universal unusual magnetoresistance, attributing it to interfacial electron scattering governed by magnetization and electric field. The two-vector magnetoresistance model offers a unified framework for understanding magnetoresistance in diverse spintronic systems.
Scientists create nanoscale magnetic thin films with embedded functionality by controlling atomic spacing on flexible substrates. This breakthrough opens doors to novel materials and applications in electronics, healthcare, and energy efficiency.
Researchers have demonstrated the unique benefits of antiferromagnets, enabling high-speed, high-efficiency memory operations. Antiferromagnets outperform ferromagnets with faster switching times and higher reliability, making them a promising complement to conventional memory technologies.
Researchers at Rice University have found that bending atomically thin layers of materials like molybdenum ditelluride creates a unique spin texture called persistent spin helix, which preserves spin state even in scattering collisions. This discovery could lead to the development of ultracompact, energy-efficient electronic devices.
Researchers successfully realized a stable, isolated quantum spin on an insulating magnesium oxide surface placed over a ferromagnetic iron substrate. The MgO/Fe(001) structure, widely used in spintronics, enables the formation of isolated spins due to its lack of conduction electrons.
Researchers have designed a novel single-atom ruthenium-doped Co3O4 catalyst that significantly promotes water splitting efficiency. The high-spin Co3+ species facilitate robust OH* adsorption and enhance the supply of H* intermediates, accelerating the Volmer–Tafel pathway of the hydrogen evolution reaction.
Researchers from The University of Osaka develop a new program to calculate the spin accumulation coefficient, providing a definitive measure of the spin Hall effect and overcoming ambiguities. This advancement enables accurate predictions for real materials, accelerating the development of advanced spintronic technologies.
Researchers at the University of Minnesota have developed a new material called Ni₄W that can generate spin currents to control magnetization in electronic devices. This material has the potential to significantly reduce power usage in devices like smartphones and data centers.
Researchers at Forschungszentrum Jülich successfully created a 2D half metal, a material that conducts electricity using one type of electron spin. The alloy, composed of iron and palladium, enables energy-efficient spintronics beyond conventional electronics.
Scientists at AIMR successfully demonstrated Rabi-like splitting in an artificial magnet using nonlinear coupling, preserving the system's symmetries. This finding opens up new possibilities for advancing our understanding of nonlinear dynamics and coupling phenomena in artificial control.
Researchers at NIMS developed a new theory explaining the oscillation of tunnel magnetoresistance (TMR) with changes in insulating barrier thickness. The theory resolves a long-standing mystery, providing insights into achieving even higher TMR ratios for enhanced magnetic memory and sensor applications.
A research team from the University of Münster has developed a new way to produce spin waveguides, allowing for large networks capable of processing information efficiently. The team created the largest spin waveguide network to date, with precise control over properties such as wavelength and reflection.
Researchers from The University of Osaka developed a technique to recover magnetization in degraded spintronics devices using molecular hydrogen and Pt underlayers. This method can improve the robustness of semiconductor memory.
Scientists from TU Delft have demonstrated quantum spin currents in graphene without external magnetic fields, a crucial step towards spintronics and next-generation technologies. These robust spintronic devices promise advancements in quantum computing and memory devices.