Articles tagged with Magnetic Anisotropy
Researchers developed a memory technology that stores data using almost no electricity by controlling spin states through temperature changes. The approach reduces energy consumption by up to 66 times compared to existing methods, making it suitable for low-power memory technologies.
Altermagnets exhibit unique magnetic structure due to unconventional symmetries, enabling spin-polarized electron currents. A new method reveals this hidden structure using circularly polarized light and resonant photoelectron diffraction.
Researchers developed a novel method to analyze energy losses in soft magnetic materials, using diamond quantum sensors and protocols for kHz and MHz frequencies. The study reveals near-zero phase delay up to 2.3 MHz in high-frequency inductors, indicating negligible energy losses.
Researchers from Osaka University have developed a new technology to lower power consumption for modern memory devices, enabling an electric-field-based writing scheme. The proposed technology could provide an alternative to traditional RAM and is a promising step towards implementing practical magnetoelectric (ME)-MRAM devices.
A new cobalt-manganese-iron alloy thin film demonstrates high perpendicular magnetic anisotropy, a key aspect for fabricating MRAM devices using spintronics. This breakthrough offers a new candidate for memory materials and contributes to the development of novel spintronics memory devices.
Scientists at the Max Planck Institute and Helmholtz-Zentrum Berlin successfully measure the largest magnetic anisotropy of a single molecule using THz electron paramagnetic resonance spectroscopy. This breakthrough has significant implications for energy-efficient data storage, with potential applications in various fields.
Scientists have observed an anisotropic anomalous Hall effect in a spinel oxide thin film with conical magnetic anisotropy. The findings propose a physical model that explains the phenomenon without violating Onsager's reciprocal theorem.
A new study at BESSY II analyzed the formation of skyrmions in ferrimagnetic thin films of dysprosium and cobalt. The researchers directly observed Néel-type skyrmions using scanning transmission X-ray microscopy, revealing their domain wall type for the first time.
Scientists have discovered new magnetic interactions in TbMn6Sn6, a Kagome layered topological magnet, which could be used to customize electron flow and reduce energy loss. The material's unique structure and electronic band structure make it an ideal candidate for quantum computing, magnetic storage media, and high-precision sensors.
A multidisciplinary research group uses magnetotactic bacteria to create nanomagnetic structures, which can be steered through the human body via external magnetic fields. They have developed a new method to measure the magnetic properties of individual nanomagnets in biological entities, enabling precise control over these structures.
Physicists at Rice University have found telltale signs of antiferromagnetic spin fluctuations coupled to superconductivity in uranium ditelluride, a rare material promising fault-free quantum computing. The discovery upends the leading explanation of how this state of matter arises in the material.
Researchers discovered a new material, h-BN, that induces interfacial perpendicular magnetic anisotropy (IPMA) with a high tunnel magnetoresistance (TMR) ratio of up to 1,000%, enabling flexible design in ferromagnetic tunnel junctions.
A team of researchers has successfully controlled the magnetic state of two-dimensional van der Waals magnets using light, enabling efficient data storage and fast data processing. By inducing 'magnetic anisotropy' with ultrashort pulses of light, the scientists can manipulate the material's magnetic properties on demand.
Scientists at Osaka University have successfully controlled nano-sized magnets by heating, amplifying microwave signals and achieving a higher efficiency than current STT-MRAM technology. This breakthrough reduces power consumption of magnetoresistive random access memory (MRAM) and artificial intelligence (AI) devices.
Scientists from Boston College create a new class of layered materials with tunable magnetic anisotropy by adjusting the spin-orbit coupling using mixed halide chemistry. This breakthrough enables the engineering of ultrathin magnetic devices with unprecedented control over magnetism.
The team developed a method to measure the energy needed to change magnetic anisotropy in a single Cobalt atom, revealing its maximum magnetic anisotropy energy and longest spin lifetime. This breakthrough presents a single-atom model system that can be used as a future qubit for quantum computing.
Scientists at UCL and international partners discovered a new mechanism controlling magnetic anisotropy at the atomic scale, enabled by electrical coupling between metal substrate and magnetic atoms. This discovery opens up new avenues for designing smallest devices for information processing, data storage, and sensing.