Articles tagged with Ferromagnetic Semiconductors
A new material, benzene-phosphonic acid (BPA), enables self-powered operation of smart sensors and wearables. The breakthrough technology reduces fabrication costs and promotes environmental sustainability.
Researchers developed more efficient semiconductors that convert solar energy into chemical energy, enabling the reuse of CO2 as a raw material for fuel production. The study also found that adding special catalysts boosts performance and extends system lifetime.
A South Korean research team has discovered a molecular-level mechanism to switch the charge polarity of organic polymer semiconductors by adjusting the concentration of a single dopant. This enables polymers to exhibit both p-type and n-type characteristics, eliminating the need for separate materials or complex device architectures.
Researchers visualized new quantum phenomenon: luminous excitons appearing on surface of antiferromagnetic semiconductor CrSBr. Excitons are created when photons strike the material, absorbing light and storing energy.
Researchers developed a novel approach to maintain quantum characteristics in three-dimensional materials by exploiting the magnetic properties of chromium sulfide bromide. This method enables the preservation of excitons' unique optical properties and their ability to carry energy without charge, making it suitable for advanced optica...
Dr. Ted Moise, UT Dallas professor and director of the North Texas Semiconductor Institute, has been honored as a National Academy of Inventors Fellow for his groundbreaking work on ferroelectric random-access memory (FRAM). This technology enables faster data storage while using less power, with applications in ultra-low power microco...
Researchers have developed a new method to determine the exchange energy of 2D materials, which reveals the stability of their ferromagnetic properties. The study shows that molybdenum disulfide exhibits highly stable ferromagnetism, only about 10 times smaller than in iron.
A team at the University of Washington has made a breakthrough in quantum computing by detecting signatures of 'fractional quantum anomalous Hall' (FQAH) states in semiconductor materials. This discovery marks a significant step towards building stable qubits and potentially developing fault-tolerant quantum computers.
The study observes electric gate-controlled exchange-bias effect in van der Waals heterostructures, enabling scalable energy-efficient spin-orbit logic. The team successfully tunes the blocking temperature of the EB effect via an electric gate, allowing for the EB field to be turned 'ON' and 'OFF'.
Researchers developed a thin-layer version of barium titanate, enabling faster switching and lower voltages for next-gen memory and logic devices. The findings could pave the way for more sustainable computing power with reduced energy consumption.
Researchers create a quantum anomalous Hall insulator by stacking a ferromagnetic material between two 2D topological insulators, enabling room-temperature lossless transport. The new architecture could lead to ultra-low energy future electronics or topological photovoltaics.
A University of Wollongong team has combined two doping elements to achieve new efficiencies in the topological insulator Bi2Se3. The resulting crystals show clear ferromagnetic ordering, a large band gap, high electronic mobility, and the opening of a surface state gap.
MnBi2Te4's unique properties make it suitable for ultra-low-energy electronics and observing exotic topological phenomena. The material is metallic along its one-dimensional edges while electrically insulating in its interior.
A new layered ferromagnetic semiconductor material has been discovered, which holds great promise for electronic technologies. The material, made of vanadium and iodine, exhibits spin-dependent electronic properties, allowing for additional control over currents flowing through it.
Ferromagnetic semiconductors have overcome a longstanding physical constraint by growing iron-doped semiconductors at room temperature. This breakthrough enables new opportunities for utilizing spin degrees of freedom in semiconductor devices, such as spin transistors.