Articles tagged with Anomalous Hall Effect
Kobe University researchers clarify conditions under which the planar Hall effect appears in classical materials, revealing threefold symmetry and mirror symmetry. This breakthrough enhances diagnostic tools for quantum computing and spintronics applications.
A study by researchers at Pohang University of Science & Technology discovered that engineered disorder can amplify transverse electron transport in magnetic materials. The findings suggest that deliberately using disorder in materials design could lead to new opportunities in spintronics and thermoelectric energy-conversion technologies.
Researchers present novel theoretical framework explaining non-monotonic temperature dependence and sign reversal of chirality-related AHE in highly conductive metals. The study reveals clear picture of unusual transport phenomena, forming foundation for rational design of next-generation spintronic devices and magnetic quantum materials.
Researchers have identified promising material platforms and pathways to create Z3 parafermions, enabling Fibonacci anyonic statistics and universal topological quantum computation. High-filling states and coupling FQAHE with superconductivity are potential approaches.
Researchers detect anomalous Hall effect in collinear antiferromagnets with non-Fermi liquid behavior, revealing a 'virtual magnetic field' that boosts the phenomenon. The findings open up new possibilities for information technologies and require further experimental confirmation.
A team of researchers from Institute of Science Tokyo discovered a large in-plane anomalous Hall effect in EuCd₂Sb₂ films under in-plane magnetic fields. This finding opens up new strategies for controlling electronic transport and advances applications in magnetic sensors.
Researchers observed a significant anomalous Hall effect at temperatures above the magnetic transition temperature in SrCo6O11, which exhibits unique spin-fluctuation phenomenon. This large effect is attributed to intense electron scattering due to spin-flip fluctuations and has implications for magneto-thermoelectric conversion.
A team of researchers has created a thermoelectric composite that exhibits a substantially larger transverse thermoelectric effect than existing magnetic materials, enabling the development of simpler thermoelectric devices. The device achieved a maximum output voltage of 15.2 μV/K, approximately six times larger than expected.
A team of scientists at NIMS and Nagoya University has developed a novel method to create transverse thermoelectric conversion materials from common soft magnetic alloys. By applying a short period of heat treatment, they significantly improve the performance of anomalous Nernst effect, leading to enhanced energy efficiency and thermal...
Researchers visualize chiral interface state at atomic scale for the first time, allowing on-demand creation of conducting channels. The technique has promise for building tunable networks of electron channels and advancing quantum computing.
Scientists have observed an anisotropic anomalous Hall effect in a spinel oxide thin film with conical magnetic anisotropy. The findings propose a physical model that explains the phenomenon without violating Onsager's reciprocal theorem.
A team at the University of Washington has made a breakthrough in quantum computing by detecting signatures of 'fractional quantum anomalous Hall' (FQAH) states in semiconductor materials. This discovery marks a significant step towards building stable qubits and potentially developing fault-tolerant quantum computers.
Scientists at RMIT University and partner organisation confirm electric control of superconductivity and giant anomalous Hall effect in the kagome metal CsV₃Sb₅. Proton intercalation modulates carrier density, allowing for tuning of Fermi surfaces and potentially realizing exotic quantum phase transitions.
Researchers from Osaka University developed a versatile method for preparing heterodimensional superlattices, exhibiting anisotropic electrical conductivity and the anomalous Hall effect at room temperature. This innovation promises to enhance data storage density, lighting efficiency, and electronic device speed.
Researchers have demonstrated a novel semiconductor exhibiting an unconventional large anomalous Hall resistance in the absence of large-scale magnetic ordering. The findings validate a recent theoretical prediction and provide new insights into the phenomenon.
A University of Wollongong team has combined two doping elements to achieve new efficiencies in the topological insulator Bi2Se3. The resulting crystals show clear ferromagnetic ordering, a large band gap, high electronic mobility, and the opening of a surface state gap.
A RMIT-led collaboration demonstrates large in-plane anisotropic magnetoresistance (AMR) in monolayer WTe2, a quantum spin Hall insulator. The team successfully fabricates devices and observes typical transport behaviors, showing promise for future low-energy electronics.
Researchers have found a way to stabilize the novel quantum effect in graphene at room temperature, which could lead to breakthroughs in data storage and computer components. The discovery was made using standard microfabrication techniques and showed that the material can generate its own magnetic field.
MnBi2Te4's unique properties make it suitable for ultra-low-energy electronics and observing exotic topological phenomena. The material is metallic along its one-dimensional edges while electrically insulating in its interior.
A team of researchers has identified an unconventional Hall effect driven by the Berry curvature, which is exclusive to semiconductor hole systems. This discovery is a major breakthrough in the search for topological effects in non-equilibrium systems.
Researchers have discovered a new mechanism in magnetic compounds that couples multiple topological bands, significantly enhancing the effects of quantum phenomena. The coupling leads to an anomalous Hall effect, where spontaneous symmetry breaking causes a transverse acceleration of electron currents.
The discovery of KV3Sb5, a material hosting Dirac physics and metallic frustrated magnetism, has led to the observation of one of the largest anomalous Hall effects (AHEs) ever seen. This unique combination enables scientists to study the interaction between these exotic properties.
Scientists at HZB have measured the energy gap in a magnetically doped topological insulator, finding it to be five times larger than theoretically predicted. This discovery could lead to the creation of near-room-temperature Quantum Hall Effect devices and quantum processing units for quantum computers.
Researchers observe anomalous spin-orbit torque in ferromagnetic films without spin-orbit coupling, indicating a new competition between spin alignment and magnetization. This finding has implications for energy-efficient magnetic-memory technology.
Researchers identify CoNb3S6 as a topological material exhibiting an extremely large anomalous Hall effect due to its unique electronic structure. The discovery opens doors for advances in materials science and potential electronic applications.
Heusler compounds have been found to host non-trivial topological properties, including the discovery of Weyl fermions. The study also reveals the importance of Berry curvature in determining key effects like the anomalous Hall Effect. This research has significant implications for energy conversion and quantum electronic devices.
Scientists from the Max Planck Institute for Chemical Physics of Solids discovered a magnetic Weyl semimetal in Co3Sn2S2, exhibiting a giant anomalous Hall effect. The material's unique properties make it an ideal candidate for realizing the quantum anomalous Hall effect at room temperature.
Scientists at PTB have successfully measured the anomalous velocity in a GaAs semiconductor with sub-picosecond time resolution, providing new insights into its microscopic origins and potential applications. The study enables the distinction between intrinsic and extrinsic contributions to the anomaly.